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384x288 readout integrated circuit for MWIR and LWIR HgCdTe based FPA

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12055

2015

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Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

Applied physics letters, 2022-08, Vol.121 (8)

2022

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Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature

Applied physics letters, 2020-02, Vol.116 (8)

2020

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The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

Technical physics letters, 2020-08, Vol.46 (8), p.741-744

2020

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HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316

2020

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A Megapixel Matrix Photodetector of the Middle Infrared Range

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1011-1015

2019

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HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316-320

2020

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Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1024-1029

2019

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HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Physica status solidi. C, 2016-07, Vol.13 (7-9), p.651-655

2016

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CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1626-1629

2016

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Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Semiconductor science and technology, 2012-03, Vol.27 (3), p.035001

2012

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Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy

Journal of crystal growth, 2005-02, Vol.274 (3-4), p.339-346

2005

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HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting

Journal of physics. Conference series, 2012-01, Vol.345 (1), p.12002-15

2012

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Mercury cadmium telluride surface passivation by the thin alumina film atomic-layer deposition

Journal of applied physics, 2017-03, Vol.121 (12)

2017

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Effect of post-implantation anneal on the current-voltage characteristics of IR photodiodes based on p-CdxHg1-xTe

Physica status solidi. C, 2010-06, Vol.7 (6), p.1627-1629

2010

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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Infrared physics & technology, 2020-03, Vol.105, p.103182, Article 103182

2020

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Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al$_{\mathbf{2}}$$O$_{\mathbf{3}}$$ Grown by Atomic Layer Deposition

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.492-497

2020

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Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared Cadmium—Mercury—Tellurium Detectors

Optoelectronics, instrumentation, and data processing, 2019-09, Vol.55 (5), p.519-524

2019

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Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.456-469

2020

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Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition

Optoelectronics, instrumentation, and data processing, 2020, Vol.56 (5), p.492-497

2020

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High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013)

Infrared physics & technology, 2016-05, Vol.76, p.72-74

2016

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The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

Infrared physics & technology, 2015-11, Vol.73, p.312-315

2015

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Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors

Infrared physics & technology, 2017-03, Vol.81, p.223-227

2017

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High operating temperature SWIR p super(+)-n FPA based on MBE-grown HgCdTe/Si(0 1 3)

Infrared physics & technology, 2016-05, Vol.76, p.72-74

2016

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HgCdTe p super(+)-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Physica status solidi. C, 2016-07, Vol.13 (7-9), p.651-655

2016

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384x288 readout integrated circuit for MWIR and LWIR HgCdTe based FPA

Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature

The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

A Megapixel Matrix Photodetector of the Middle Infrared Range

HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns

HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy

HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting

Mercury cadmium telluride surface passivation by the thin alumina film atomic-layer deposition

Effect of post-implantation anneal on the current-voltage characteristics of IR photodiodes based on p-CdxHg1-xTe

Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al$_{\mathbf{2}}$$O$_{\mathbf{3}}$$ Grown by Atomic Layer Deposition

Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared Cadmium—Mercury—Tellurium Detectors

Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition

High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013)

The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors

High operating temperature SWIR p super(+)-n FPA based on MBE-grown HgCdTe/Si(0 1 3)

HgCdTe p super(+)-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

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