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Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

Journal of applied physics, 2013-01, Vol.113 (4)

2013

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Challenges for room temperature operation of electrically pumped GeSn lasers

Scientific reports, 2024-05, Vol.14 (1), p.10318-10318, Article 10318

2024

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Efficiency limits of laser power converters for optical power transfer applications

Journal of physics. D, Applied physics, 2013-07, Vol.46 (26), p.264006-1-6

2013

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Mycobacterium bovis (bovine tuberculosis) infection in North American wildlife: current status and opportunities for mitigation of risks of further infection in wildlife populations

Epidemiology and infection, 2013-07, Vol.141 (7), p.1357-1370

2013

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Localization effects and band gap of GaAsBi alloys

Physica Status Solidi. B: Basic Solid State Physics, 2014-06, Vol.251 (6), p.1276-1281

2014

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Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)

Scientific reports, 2016-01, Vol.6 (1), p.19595-19595, Article 19595

2016

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Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

Applied physics letters, 2015-10, Vol.107 (14)

2015

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Pixelated full-colour small molecule semiconductor devices towards artificial retinas

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-05, Vol.9 (18), p.5858-5867

2021

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Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Journal of crystal growth, 2012, Vol.338 (1), p.57-61

2012

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Properties of hybrid MOVPE MBE grown GaAsBi GaAs based near-infrared emitting quantum well lasers

Semiconductor science and technology, 2015-09, Vol.30 (9), p.94008

2015

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Growth and characterisation of Ga(NAsBi) alloy by metal–organic vapour phase epitaxy

Journal of crystal growth, 2014-06, Vol.396, p.79-84

2014

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Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon

Optics letters, 2011-11, Vol.36 (21), p.4158

2011

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Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Journal of applied physics, 2012-06, Vol.111 (11)

2012

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Band engineering in dilute nitride and bismide semiconductor lasers

Semiconductor science and technology, 2012-09, Vol.27 (9), p.94011

2012

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Optical properties of InGaN-based LEDs investigated using high hydrostatic pressure dependent techniques

Physica Status Solidi. B: Basic Solid State Physics, 2013-04, Vol.250 (4), p.698-702

2013

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Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Unfolding the band structure of GaAsBi

Journal of physics. Condensed matter, 2017-02, Vol.29 (7), p.075001-075001

2017

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A review of non linear piezoelectricity in semiconductors

AIP Conference Proceedings, 2014, Vol.1590 (1), p.41

2014

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Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

Applied physics letters, 2011-08, Vol.99 (7), p.071109-071109-3

2011

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Thermal performance of GaInSb quantum well lasers for silicon photonics applications

Applied physics letters, 2021-03, Vol.118 (10)

2021

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Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

Semiconductor science and technology, 2015-09, Vol.30 (9), p.94010

2015

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Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry

Journal of applied physics, 2018-01, Vol.123 (4)

2018

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Effects of rapid thermal annealing on GaAs1-xBix alloys

Applied physics letters, 2012-07, Vol.101 (1)

2012

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Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

Journal of physics. D, Applied physics, 2014-08, Vol.47 (34), p.1-8

2014

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Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

Challenges for room temperature operation of electrically pumped GeSn lasers

Efficiency limits of laser power converters for optical power transfer applications

Mycobacterium bovis (bovine tuberculosis) infection in North American wildlife: current status and opportunities for mitigation of risks of further infection in wildlife populations

Localization effects and band gap of GaAsBi alloys

Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)

Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

Pixelated full-colour small molecule semiconductor devices towards artificial retinas

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Properties of hybrid MOVPE MBE grown GaAsBi GaAs based near-infrared emitting quantum well lasers

Growth and characterisation of Ga(NAsBi) alloy by metal–organic vapour phase epitaxy

Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon

Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Band engineering in dilute nitride and bismide semiconductor lasers

Optical properties of InGaN-based LEDs investigated using high hydrostatic pressure dependent techniques

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Unfolding the band structure of GaAsBi

A review of non linear piezoelectricity in semiconductors

Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

Thermal performance of GaInSb quantum well lasers for silicon photonics applications

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry

Effects of rapid thermal annealing on GaAs1-xBix alloys

Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

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