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Theoretical study of nitride short period superlattices

Journal of physics. Condensed matter, 2018-02, Vol.30 (6), p.063001-063001

2018

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Evidence for "dark charge" from photoluminescence measurements in wide InGaN quantum wells

Optics express, 2023-01, Vol.31 (2), p.3227-3236

2023

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Special role of indium nitride in the properties of related compounds and quantum structures

AIP Advances, 2024-04, Vol.14 (4), p.040704-040704-15

2024

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Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

Optics express, 2020-07, Vol.28 (15), p.22524-22539

2020

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The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy

Applied physics letters, 2014-05, Vol.104 (18)

2014

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Comparison of wurtzite GaN/AlN and ZnO/MgO short‐period superlattices: Calculation of band gaps and built‐in electric field

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

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Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Optics express, 2021-01, Vol.29 (2), p.1824-1837

2021

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Structural and electronic properties of wurtzite MgZnO and BeMgZnO alloys and their thermodynamic stability

Journal of applied physics, 2016-12, Vol.120 (21)

2016

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Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

Journal of applied physics, 2015-08, Vol.118 (7)

2015

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Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

Crystal growth & design, 2012-07, Vol.12 (7), p.3521-3525

2012

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III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources

Japanese Journal of Applied Physics, 2022-01, Vol.61 (SA), p.SA0801

2022

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Band gap engineering of In(Ga)N/GaN short period superlattices

Scientific reports, 2017-11, Vol.7 (1), p.16055-9, Article 16055

2017

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Hydrostatic pressure and strain effects in short period InN/GaN superlattices

Applied physics letters, 2012-08, Vol.101 (9), p.92104

2012

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Graded-index separate confinement heterostructure InGaN laser diodes

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate

Optics express, 2016-05, Vol.24 (9), p.9673-9682

2016

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Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle

Optical materials express, 2022-01, Vol.12 (1), p.119

2022

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Cavity suppression in nitride based superluminescent diodes

Journal of applied physics, 2012-04, Vol.111 (8), p.083106-083106-6

2012

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Compositional and strain analysis of In(Ga)N/GaN short period superlattices

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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Band gap bowing in quaternary nitride semiconducting alloys

Applied physics letters, 2011-06, Vol.98 (24), p.241905-241905-3

2011

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Limitations to band gap tuning in nitride semiconductor alloys

Applied physics letters, 2010-03, Vol.96 (10), p.101907-101907-3

2010

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Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Scientific reports, 2014-03, Vol.4 (1), p.4371-4371, Article 4371

2014

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Band gaps in InN/GaN superlattices: Nonpolar and polar growth directions

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Applied physics letters, 2005-01, Vol.86 (3), p.031915-031915-3

2005

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Thermal conductivity of GaN crystals in 4.2–300 K range

Solid state communications, 2003-10, Vol.128 (2), p.69-73

2003

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Theoretical study of nitride short period superlattices

Evidence for "dark charge" from photoluminescence measurements in wide InGaN quantum wells

Special role of indium nitride in the properties of related compounds and quantum structures

Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy

Comparison of wurtzite GaN/AlN and ZnO/MgO short‐period superlattices: Calculation of band gaps and built‐in electric field

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Structural and electronic properties of wurtzite MgZnO and BeMgZnO alloys and their thermodynamic stability

Influence of internal electric fields on band gaps in short period GaN/GaAlN and InGaN/GaN polar superlattices

Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources

Band gap engineering of In(Ga)N/GaN short period superlattices

Hydrostatic pressure and strain effects in short period InN/GaN superlattices

Graded-index separate confinement heterostructure InGaN laser diodes

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate

Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle

Cavity suppression in nitride based superluminescent diodes

Compositional and strain analysis of In(Ga)N/GaN short period superlattices

Band gap bowing in quaternary nitride semiconducting alloys

Limitations to band gap tuning in nitride semiconductor alloys

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Band gaps in InN/GaN superlattices: Nonpolar and polar growth directions

Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Thermal conductivity of GaN crystals in 4.2–300 K range

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