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A Schottky-Type Metal-Semiconductor-Metal Al0.24Ga0.76N UV Sensor Prepared by Using Selective Annealing

Sensors (Basel, Switzerland), 2021-06, Vol.21 (12), p.4243

2021

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GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate

Sensors (Basel, Switzerland), 2019-03, Vol.19 (5), p.1051

2019

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Selective Ohmic Contact Formation on Schottky Type AlGaN/GaN UV Sensors Using Local Breakdown

IEEE sensors journal, 2019-04, Vol.19 (8), p.2946-2949

2019

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Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

IEEE electron device letters, 2010-03, Vol.31 (3), p.192-194

2010

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Characteristics of GaN Metal-Insulator-Semiconductor-Insulator-Metal Ultraviolet Photodiodes Using Al2O3, HfO2, and ZrO2 as Insulators

IEEE sensors journal, 2018-06, Vol.18 (11), p.4477-4481

2018

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Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

Nanomaterials (Basel, Switzerland), 2023-12, Vol.14 (1), p.59

2023

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Loss of PTEN Is Associated with Aggressive Behavior in ERG-Positive Prostate Cancer

Cancer epidemiology, biomarkers & prevention, 2013-12, Vol.22 (12), p.2333-2344

2013

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Effect of Growth Temperature on the Structural and Electrical Properties of ZrO₂ Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH₃)₂]₃/C₇H₈ Cocktail Precursor

Materials, 2018-03, Vol.11 (3), p.386

2018

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Selective Annealing Effects in Asymmetric Metal-semiconductor-metal AlGaN UV Sensors

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2020, 20(6), 96, pp.510-517

2020

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Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

IEEE sensors journal, 2016-09, Vol.16 (18), p.6903-6907

2016

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Hybrid UV Active Pixel Sensor Implemented Using GaN MSM UV Sensor and Si-Based Circuit

IEEE sensors journal, 2015-09, Vol.15 (9), p.5071-5074

2015

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Physics-based analytical channel charge model of InxGa1-xAs/In0.52Al0.48As quantum-well field-effect transistors from subthreshold to strong inversion regimes

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.1-1

2022

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Normally-off GaN MOSFETs on insulating substrate

Solid-state electronics, 2013-12, Vol.90, p.79-85

2013

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Site-Specific Glycan Microheterogeneity Evaluation of Aflibercept Fusion Protein by Glycopeptide-Based LC-MSMS Mapping

International journal of molecular sciences, 2022-10, Vol.23 (19), p.11807

2022

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Asymmetric Metal–Semiconductor–Metal Al0.24Ga0.76N UV Sensors with Surface Passivation Effect Under Local Joule Heating

Senseo haghoeji, 2023-11, Vol.32 (6), p.425-431

2023

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A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

IEEE electron device letters, 2006-02, Vol.27 (2), p.81-83

2006

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Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

Microelectronic engineering, 2011-07, Vol.88 (7), p.1221-1224

2011

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Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Sensors (Basel, Switzerland), 2017-07, Vol.17 (7), p.1684

2017

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Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14(5), 59, pp.601-608

2014

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Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios

Applied physics letters, 2013-09, Vol.103 (11)

2013

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Narrow Metal-Filled Trench as a Source/Drain Contact for Three-Dimensional Metal–Oxide–Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Study of Si implantation into Mg-doped GaN for MOSFETs

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.1964-1966

2010

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GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

Japanese Journal of Applied Physics, 2015-06, Vol.54 (6S1), p.6

2015

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Comparative Glycopeptide Analysis for Protein Glycosylation by Liquid Chromatography and Tandem Mass Spectrometry: Variation in Glycosylation Patterns of Site-Directed Mutagenized Glycoprotein

International journal of analytical chemistry, 2018-01, Vol.2018 (2018), p.1-10

2018

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Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

Solid-state electronics, 2014-10, Vol.100, p.11-14

2014

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A Schottky-Type Metal-Semiconductor-Metal Al0.24Ga0.76N UV Sensor Prepared by Using Selective Annealing

GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate

Selective Ohmic Contact Formation on Schottky Type AlGaN/GaN UV Sensors Using Local Breakdown

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

Characteristics of GaN Metal-Insulator-Semiconductor-Insulator-Metal Ultraviolet Photodiodes Using Al2O3, HfO2, and ZrO2 as Insulators

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

Loss of PTEN Is Associated with Aggressive Behavior in ERG-Positive Prostate Cancer

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO₂ Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH₃)₂]₃/C₇H₈ Cocktail Precursor

Selective Annealing Effects in Asymmetric Metal-semiconductor-metal AlGaN UV Sensors

Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

Hybrid UV Active Pixel Sensor Implemented Using GaN MSM UV Sensor and Si-Based Circuit

Physics-based analytical channel charge model of InxGa1-xAs/In0.52Al0.48As quantum-well field-effect transistors from subthreshold to strong inversion regimes

Normally-off GaN MOSFETs on insulating substrate

Site-Specific Glycan Microheterogeneity Evaluation of Aflibercept Fusion Protein by Glycopeptide-Based LC-MSMS Mapping

Asymmetric Metal–Semiconductor–Metal Al0.24Ga0.76N UV Sensors with Surface Passivation Effect Under Local Joule Heating

A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si

Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs

Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios

Narrow Metal-Filled Trench as a Source/Drain Contact for Three-Dimensional Metal–Oxide–Semiconductor Field Effect Transistor

Study of Si implantation into Mg-doped GaN for MOSFETs

GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

Comparative Glycopeptide Analysis for Protein Glycosylation by Liquid Chromatography and Tandem Mass Spectrometry: Variation in Glycosylation Patterns of Site-Directed Mutagenized Glycoprotein

Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

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