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Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells

Electronic Materials Letters, 2022, 18(2), , pp.153-158

2022

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Phonons and Valence-band Splitting in Strained GaAs1-xNx/GaAs Epilayers

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21(3), 99, pp.206-214

2021

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Temperature dependence of the photocurrent in Ge1−xSnx layers

Journal of the Korean Physical Society, 2016, 69(2), , pp.207-212

2016

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Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Materials science in semiconductor processing, 2014-06, Vol.22, p.37-43

2014

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Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2014-05, Vol.21, p.58-65

2014

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Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Materials science in semiconductor processing, 2014-01, Vol.17, p.74-80

2014

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Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2013-12, Vol.16 (6), p.1405-1409

2013

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Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Materials science in semiconductor processing, 2014-01, Vol.17, p.178-183

2014

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Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

Electronic Materials Letters, 2012, 8(4), , pp.423-428

2012

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Growth and Characterization of Si1-xGex QDs on Si/Si0.8Ge0.2 Layer

Electronic Materials Letters, 2012, 8(6), , pp.559-563

2012

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High-performance high-Tc superconducting wires

Science (American Association for the Advancement of Science), 2006-03, Vol.311 (5769), p.1911-1914

2006

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Growth of epitaxial TiN (111) thin films with low resistivity on Si (111) by crossed-beam pulsed laser deposition

Journal of the Korean Physical Society, 2017, 71(2), , pp.111-115

2017

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Effect of Sn Composition in Ge1−xSn x Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Journal of the Korean Physical Society, 2018-05, Vol.72 (9), p.1063-1068

2018

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Effect of Sn Composition in Ge1−x Sn x Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Journal of the Korean Physical Society, 2018-01, Vol.72 (9), p.1063-1068

2018

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Effect of Sn Composition in Ge1−xSnx Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Journal of the Korean Physical Society, 2018, 72(9), , pp.1063-1068

2018

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Temperature dependence of the photocurrent in Ge1−x Sn x layers

Journal of the Korean Physical Society, 2016-07, Vol.69 (2), p.207-212

2016

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Analysis of Flux Pinning in YBa2Cu3O7-δ Films by Nanoparticle-Modified Substrate Surfaces

Physical review. B, Condensed matter and materials physics, 2006-11, Vol.74 (18)

2006

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Growth of a Ge layer on 8in. Si (100) substrates by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2014-05, Vol.21, p.58-65

2014

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Electrical and Optical Properties of Amorphous (In, Sn)–Ga–Zn–O Thin Film

Journal of nanoscience and nanotechnology, 2012-04, Vol.12 (4), p.3673-3676

2012

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A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure

Journal of the Korean Physical Society, 2014, 65(12), , pp.2100-2106

2014

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Optical properties of hybrid Si1−Ge /Si quantum dot/quantum well structures grown on Si by RPCVD

Materials science in semiconductor processing, 2014-01, Vol.17, p.178-183

2014

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Flux-pinning characteristics as a function of density of columnar defects comprised of self-assembled nanodots and nanorods in epitaxial YBa2Cu3O7-δ films for coated conductor applications

Physica. C, Superconductivity, 2007-06, Vol.457 (1-2), p.41-46

2007

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Optical Characterization of Ge-on-Si Grown by using RTCVD

ECS transactions, 2013, Vol.50 (9), p.381-386

2013

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Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Journal of the Korean Physical Society, 2014, 64(10), , pp.1430-1436

2014

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Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs

ECS transactions, 2013, Vol.58 (8), p.119-132

2013

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Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells

Phonons and Valence-band Splitting in Strained GaAs1-xNx/GaAs Epilayers

Temperature dependence of the photocurrent in Ge1−xSnx layers

Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

Growth and Characterization of Si1-xGex QDs on Si/Si0.8Ge0.2 Layer

High-performance high-Tc superconducting wires

Growth of epitaxial TiN (111) thin films with low resistivity on Si (111) by crossed-beam pulsed laser deposition

Effect of Sn Composition in Ge1−xSn x Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Effect of Sn Composition in Ge1−x Sn x Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Effect of Sn Composition in Ge1−xSnx Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Temperature dependence of the photocurrent in Ge1−x Sn x layers

Analysis of Flux Pinning in YBa2Cu3O7-δ Films by Nanoparticle-Modified Substrate Surfaces

Growth of a Ge layer on 8in. Si (100) substrates by rapid thermal chemical vapor deposition

Electrical and Optical Properties of Amorphous (In, Sn)–Ga–Zn–O Thin Film

A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure

Optical properties of hybrid Si1−Ge /Si quantum dot/quantum well structures grown on Si by RPCVD

Flux-pinning characteristics as a function of density of columnar defects comprised of self-assembled nanodots and nanorods in epitaxial YBa2Cu3O7-δ films for coated conductor applications

Optical Characterization of Ge-on-Si Grown by using RTCVD

Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Electroluminescence of n-Ge/i-Ge/p-Si Hetero Junction PIN LEDs

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