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743The lesion width and gap assessed by late-gadolinium enhancement magnetic resonance imaging after hotballoon ablation as compared to cryoballoon and conventional radiofrequency ablation

Europace (London, England), 2018-03, Vol.20 (suppl_1), p.i124-i124

2018

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Impact of the left ventricular lead position for long-term prognosis after cardiac resynchronization therapy in heart failure patients

European heart journal, 2013-08, Vol.34 (suppl 1), p.P3173-P3173

2013

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Anisotropic gate recess dry-etching for InGaP/InGaAs/GaAs HEMTs depending on size of active region

Electronics letters, 1998-06, Vol.34 (12), p.1263

1998

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0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647

1997

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0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency

IEEE electron device letters, 1997-02, Vol.18 (2), p.63-65

1997

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Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT's with 0.35 μm gates

IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1742-1746

1994

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EMERGENCE OF LEADERSHIP IN TEAMS

Japanese economic review (Oxford, England), 2005-09, Vol.56 (3), p.295-316

2005

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A 48.1 ps HEMT DCFL NAND circuit with a dual gate structure

Solid-state electronics, 1995-09, Vol.38 (9), p.1717-1721

1995

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Immunological detection of fecal occult blood-follow up study on patients with positive testing

Rinsho byori. The Japanese journal of clinical pathology, 1992-09, Vol.40 (9), p.993

1992

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Exchange and correlation potentials in the one-electron equation

Solid state communications, 1983-01, Vol.47 (8), p.641-644

1983

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Enhancement of Mg activation in AlGaAs by Mg+Ar and Mg+P dual ion implantation

Journal of applied physics, 1997-06, Vol.81 (11), p.7367-7371

1997

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A new interpolation between long- and short-range correlations in an electron liquid. III

Journal of physics. C, Solid state physics, 1988-08, Vol.21 (22), p.4045-4069

1988

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0.3-mu m gate length p-channel AlGaAs/InGaAs heterostructure fieldeffect transistors with high cut-off frequency

IEEE electron device letters, 1997-02, Vol.18 (2), p.63-65

1997

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A new interpolation between long- and short range correlations in an electron liquid. I. Diagrammatic consideration of the local field corrections

Journal of physics. C, Solid state physics, 1986-08, Vol.19 (22), p.4247-4261

1986

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A new interpolation between long- and short-range correlations in an electron liquid. II. Various numerical results

Journal of physics. C, Solid state physics, 1986-08, Vol.19 (22), p.4263-4277

1986

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Spin-parallel and spin-antiparallel pair correlation functions in the particle-particle ladder approximation

Journal of physics. C, Solid state physics, 1985-08, Vol.18 (23), p.4471-4485, Article 4471

1985

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Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT' s with 0.35 mu mgates

IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1742-1746

1994

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Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT''s with 0.35 mu mgates

IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1742-1746

1994

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Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT's with 0.35 /spl mu/m gates

IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1742-1746

1994

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The effective mass of the quasi-particle in an electron liquid at metallic densities

Journal of physics. C, Solid state physics, 1987-06, Vol.20 (17), p.2511-2532

1987

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A study of the self-energy of quasiparticles in an electron liquid

Journal of physics. C, Solid state physics, 1984-12, Vol.17 (36), p.6685-6699

1984

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Reconsideration of the exchange correction to the RPA

Journal of physics. C, Solid state physics, 1984-10, Vol.17 (28), p.4951-4969, Article 4951

1984

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Interface property of Mg-based dual ion implanted p+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs

Applied surface science, 1997, Vol.117-18, p.352-356

1997

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Chemical-mechanical polishing of metalorganic chemical-vapor-deposited gold for LSI interconnection

Japanese Journal of Applied Physics, 1993-03, Vol.32 (3B), p.L392-L394

1993

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Warp Reduction of High-Electron-Mobility-Transistor on Si Wafer by In-Doped Selectively Doped Heterostructure and Strained-Layer Superlattice Buffer Layer

Japanese Journal of Applied Physics, 1994, Vol.33 (8R), p.4499

1994

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743The lesion width and gap assessed by late-gadolinium enhancement magnetic resonance imaging after hotballoon ablation as compared to cryoballoon and conventional radiofrequency ablation

Impact of the left ventricular lead position for long-term prognosis after cardiac resynchronization therapy in heart failure patients

Anisotropic gate recess dry-etching for InGaP/InGaAs/GaAs HEMTs depending on size of active region

0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency

Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT's with 0.35 μm gates

EMERGENCE OF LEADERSHIP IN TEAMS

A 48.1 ps HEMT DCFL NAND circuit with a dual gate structure

Immunological detection of fecal occult blood-follow up study on patients with positive testing

Exchange and correlation potentials in the one-electron equation

Enhancement of Mg activation in AlGaAs by Mg+Ar and Mg+P dual ion implantation

A new interpolation between long- and short-range correlations in an electron liquid. III

0.3-mu m gate length p-channel AlGaAs/InGaAs heterostructure fieldeffect transistors with high cut-off frequency

A new interpolation between long- and short range correlations in an electron liquid. I. Diagrammatic consideration of the local field corrections

A new interpolation between long- and short-range correlations in an electron liquid. II. Various numerical results

Spin-parallel and spin-antiparallel pair correlation functions in the particle-particle ladder approximation

Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT' s with 0.35 mu mgates

Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT''s with 0.35 mu mgates

Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT's with 0.35 /spl mu/m gates

The effective mass of the quasi-particle in an electron liquid at metallic densities

A study of the self-energy of quasiparticles in an electron liquid

Reconsideration of the exchange correction to the RPA

Interface property of Mg-based dual ion implanted p+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs

Chemical-mechanical polishing of metalorganic chemical-vapor-deposited gold for LSI interconnection

Warp Reduction of High-Electron-Mobility-Transistor on Si Wafer by In-Doped Selectively Doped Heterostructure and Strained-Layer Superlattice Buffer Layer

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