UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

SEMICONDUCTOR SENSORS – SEMICONDUCTOR ELECTRONICS PROMISING DIRECTION

Sensor Electronics and Microsystem Technologies, 2021-10, Vol.18 (2), p.47-53

Strikha, V. I.

2021

Volltextzugriff (PDF)

Strain Engineering of Ferromagnetic-Graphene-Ferroelectric Nanostructures

Physical review applied, 2020-08, Vol.14 (2), Article 024081

2020

Volltextzugriff (PDF)

A theoretical model for estimation of work function reduction for MXenes with hydroxyl termination

Fìzika ì hìmìâ tverdogo tìla (Online), 2023-01, Vol.24 (1), p.102-105

2023

Volltextzugriff (PDF)

Pt content of Cu–Ni deposits and ore occurrences in the Stanovoi Ni-bearing province (Far East, Russia)

Doklady earth sciences, 2017-12, Vol.477 (2), p.1396-1401

2017

Volltextzugriff (PDF)

The Lukindinskii dunite-troktolite-gabbro massif of the Upper Amur Region: New geological, geochronological, and geochemical data

Doklady earth sciences, 2015-04, Vol.461 (2), p.339-344

2015

Volltextzugriff (PDF)

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

Fìzika ì hìmìâ tverdogo tìla (Online), 2022-12, Vol.23 (4), p.705-713

2022

Volltextzugriff (PDF)

Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric

Physical review. B, Condensed matter and materials physics, 2015-06, Vol.91 (23), Article 235312

2015

Volltextzugriff (PDF)

Ferroelectric domain triggers the charge modulation in semiconductors (invited)

Journal of applied physics, 2014-08, Vol.116 (6)

2014

Volltextzugriff (PDF)

Effect of surface ionic screening on the polarization reversal scenario in ferroelectric thin films: Crossover from ferroionic to antiferroionic states

Physical review. B, 2017-12, Vol.96 (24), Article 245405

2017

Volltextzugriff (PDF)

Vadym Yevhenovych Lashkaryov, the Outstanding Ukrainian Physicist of the 20th Century, the Discoverer of the p-n Junction in Semiconductors (Dedicated to the 120th Anniversary of his Birthday)

Ukrainian journal of physics (Kiev), 2023-11, Vol.68 (10), p.705

Strikha, M.V.

2023

Volltextzugriff (PDF)

SCIENCE, EDUCATION, WAR - CHALLENGES OF THE TIME

Sensor Electronics and Microsystem Technologies, 2023-07, Vol.20 (2), p.4-9

Strikha, M. V.

2023

Volltextzugriff (PDF)

Late Mesozoic collisional granitoids of the upper Amur area: New geochemical data

Geochemistry international, 2006-08, Vol.44 (8), p.791-807

Strikha, V. E.

2006

Volltextzugriff (PDF)

A study of hydrogen detection with palladium modified porous silicon

Analytica chimica acta, 1998-11, Vol.375 (3), p.205-210

1998

Volltextzugriff (PDF)

Mesozoic granitoids of the upper Amur region: New Sr, Nd, and O isotopic composition data

Doklady earth sciences, 2006-07, Vol.409 (2), p.944-947

Strikha, V. E.

2006

Volltextzugriff (PDF)

Electrical features of the metal-thin porous silicon-silicon structure

Journal of physics. D, Applied physics, 2000-08, Vol.33 (16), p.1957-1964

2000

Volltextzugriff (PDF)

100 years of semiconductor science: The Ukrainian contribution

Europhysics news, 2014-01, Vol.45 (1), p.15-18

2014

Volltextzugriff (PDF)

Ukrainian Language and Physics: a Brief Historical Retrospective (to the 150th Anniversary of the Shevchenko Scientific Society)

Ukrainian journal of physics (Kiev), 2024-03, Vol.69 (2), p.124

Strikha, M.V.

2024

Volltextzugriff (PDF)

Thin-film conductometric biosensors for glucose and urea determination

Biosensors & bioelectronics, 1994, Vol.9 (3), p.217-223

1994

Volltextzugriff (PDF)

ON THE PHYSICAL NATURE OF FIELD EMISSION FROM ZnO NANOSHEETS

Sensor Electronics and Microsystem Technologies, 2024-03, Vol.21 (1), p.4-10

2024

Volltextzugriff (PDF)

Nontrivial temperature behavior of the carrier concentration in graphene on ferroelectric substrate with domain walls

Acta materialia, 2018-08, Vol.155 (C), p.302-317

2018

Volltextzugriff (PDF)

Surfaces with Lowered Electron Work Function: Problems of Their Creation and Theoretical Description. A Review

Ukrainian journal of physics (Kiev), 2023-10, Vol.68 (8), p.549

2023

Volltextzugriff (PDF)

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

Journal of applied physics, 2016-12, Vol.120 (21)

2016

Volltextzugriff (PDF)

ANALYTICAL MODEL FOR A SUBTHRESHOLD SWING IN A MOSFET WITH A SOURCE BASED ON COLD METAL

Sensor Electronics and Microsystem Technologies, 2023-09, Vol.20 (3), p.30-37

2023

Volltextzugriff (PDF)

THE IMPACT OF ADSORBED MONOLAYERS WITH AN ARBITRARY CONCENTRATION RATIO OF OPPOSITE CHARGES ON THE ELECTRON AFFINITY OF A SEMICONDUCTOR

Sensor Electronics and Microsystem Technologies, 2023-04, Vol.20 (1), p.4-10

2023

Volltextzugriff (PDF)

Fundamental miniaturization limits for MOSFETs with a monolayer MoS2 channel

Applied physics letters, 2021-07, Vol.119 (4)

2021

Volltextzugriff (PDF)

1 – 25 von 173

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(148)
Mit Volltextzugriff
(134)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(97)
Physical Sciences
(92)
Physics
(79)
Physics, Applied
(32)
Physics, Condensed Matter
(29)
Technology
(28)
Exact Sciences And Technology
(27)
Materials Science
(25)
Physics, Multidisciplinary
(19)
Chemistry
(16)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(16)
Materials Science, Multidisciplinary
(15)
Graphene
(13)
Ferroelectric Materials
(11)
Ferroelectricity
(11)
Applied Physics
(9)
Substrates
(9)
Biosensors
(8)
Chemistry, Analytical
(8)
Metals
(8)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

SEMICONDUCTOR SENSORS – SEMICONDUCTOR ELECTRONICS PROMISING DIRECTION

Strain Engineering of Ferromagnetic-Graphene-Ferroelectric Nanostructures

A theoretical model for estimation of work function reduction for MXenes with hydroxyl termination

Pt content of Cu–Ni deposits and ore occurrences in the Stanovoi Ni-bearing province (Far East, Russia)

The Lukindinskii dunite-troktolite-gabbro massif of the Upper Amur Region: New geological, geochronological, and geochemical data

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric

Ferroelectric domain triggers the charge modulation in semiconductors (invited)

Effect of surface ionic screening on the polarization reversal scenario in ferroelectric thin films: Crossover from ferroionic to antiferroionic states

Vadym Yevhenovych Lashkaryov, the Outstanding Ukrainian Physicist of the 20th Century, the Discoverer of the p-n Junction in Semiconductors (Dedicated to the 120th Anniversary of his Birthday)

SCIENCE, EDUCATION, WAR - CHALLENGES OF THE TIME

Late Mesozoic collisional granitoids of the upper Amur area: New geochemical data

A study of hydrogen detection with palladium modified porous silicon

Mesozoic granitoids of the upper Amur region: New Sr, Nd, and O isotopic composition data

Electrical features of the metal-thin porous silicon-silicon structure

100 years of semiconductor science: The Ukrainian contribution

Ukrainian Language and Physics: a Brief Historical Retrospective (to the 150th Anniversary of the Shevchenko Scientific Society)

Thin-film conductometric biosensors for glucose and urea determination

ON THE PHYSICAL NATURE OF FIELD EMISSION FROM ZnO NANOSHEETS

Nontrivial temperature behavior of the carrier concentration in graphene on ferroelectric substrate with domain walls

Surfaces with Lowered Electron Work Function: Problems of Their Creation and Theoretical Description. A Review

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

ANALYTICAL MODEL FOR A SUBTHRESHOLD SWING IN A MOSFET WITH A SOURCE BASED ON COLD METAL

THE IMPACT OF ADSORBED MONOLAYERS WITH AN ARBITRARY CONCENTRATION RATIO OF OPPOSITE CHARGES ON THE ELECTRON AFFINITY OF A SEMICONDUCTOR

Fundamental miniaturization limits for MOSFETs with a monolayer MoS2 channel

Suchergebnisse filtern