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Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

Applied physics letters, 2017-06, Vol.110 (24)

2017

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On the origin of interface states at oxide/III-nitride heterojunction interfaces

Journal of applied physics, 2016-12, Vol.120 (22)

2016

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InN/InAlN heterostructures for new generation of fast electronics

Journal of applied physics, 2024-06, Vol.135 (24)

2024

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Investigation of self-nucleated skyrmion states in the ferromagnetic/nonmagnetic multilayer dot

Applied physics letters, 2021-05, Vol.118 (21)

2021

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Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance

physica status solidi (b), 2015-05, Vol.252 (5), p.996-1000

2015

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InN: Breaking the limits of solid-state electronics

AIP advances, 2021-12, Vol.11 (12), p.125325-125325-5

2021

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Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Journal of applied physics, 2016-05, Vol.119 (20)

2016

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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Applied surface science, 2017-12, Vol.426, p.656-661

2017

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Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

Applied physics letters, 2008-09, Vol.93 (12), p.124103

2008

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Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Applied physics letters, 2009-06, Vol.94 (22), p.223512-223512-3

2009

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Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors

Semiconductor science and technology, 2017-02, Vol.32 (2), p.25017

2017

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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Semiconductor science and technology, 2017-03, Vol.32 (4)

2017

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Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

Applied physics letters, 2007-03, Vol.90 (12)

2007

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InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Trapped charge effects in AlGaN GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator

Semiconductor science and technology, 2014-04, Vol.29 (4)

2014

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Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

Applied physics letters, 2010-01, Vol.96 (1)

2010

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Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements

Applied physics letters, 2013-02, Vol.102 (6)

2013

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Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

Applied physics letters, 2012-04, Vol.100 (14), p.142113-142113-3

2012

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AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide

Semiconductor science and technology, 2007-08, Vol.22 (8), p.947-951

2007

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Preparation of thin Ga-doped ZnO layers for core–shell GaP/ZnO nanowires

Applied surface science, 2012-07, Vol.258 (19), p.7607-7611

2012

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Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

Solid-state electronics, 2008-06, Vol.52 (6), p.973-979

2008

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Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization

Applied surface science, 2013-03, Vol.269, p.60-64

2013

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GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

Semiconductor science and technology, 2012-11, Vol.27 (11), p.115002

2012

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Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors

Journal of electronic materials, 2012-11, Vol.41 (11), p.3013-3016

2012

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Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Semiconductor science and technology, 2009-07, Vol.24 (7), p.075014-075014 (5)

2009

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Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

On the origin of interface states at oxide/III-nitride heterojunction interfaces

InN/InAlN heterostructures for new generation of fast electronics

Investigation of self-nucleated skyrmion states in the ferromagnetic/nonmagnetic multilayer dot

Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance

InN: Breaking the limits of solid-state electronics

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator

Trapped charge effects in AlGaN GaN metal-oxide-semiconductor structures with Al2O3 and ZrO2 gate insulator

Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements

Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide

Preparation of thin Ga-doped ZnO layers for core–shell GaP/ZnO nanowires

Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization

GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

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