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Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing

Journal of materials science. Materials in electronics, 2023-05, Vol.34 (14), p.1129, Article 1129

2023

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Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

Electronics letters, 1999-07, Vol.35 (14), p.1163

1999

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Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers

Applied physics letters, 2004-02, Vol.84 (7), p.1058-1060

2004

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Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/InxAlyGazAs/GaAs quantum wells

Journal of applied physics, 2014-01, Vol.115 (1)

2014

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Room-temperature operation of InAs quantum-dash lasers on InP [001]

IEEE photonics technology letters, 2001-08, Vol.13 (8), p.767-769

2001

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Theoretical modeling and experimental characterization of InAs∕InGaAs quantum dots in a well detector

Journal of applied physics, 2004-10, Vol.96 (7), p.3782-3786

2004

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High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector

Applied physics letters, 2002-08, Vol.81 (8), p.1369-1371

2002

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Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

IEEE photonics technology letters, 1999-12, Vol.11 (12), p.1527-1529

1999

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Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

Applied physics letters, 2000-07, Vol.77 (2), p.262-264

2000

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Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector

Applied physics letters, 2003-10, Vol.83 (14), p.2745-2747

2003

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Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers

Applied physics letters, 2001-05, Vol.78 (19), p.2825-2827

2001

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InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers

Journal of applied physics, 2003-08, Vol.94 (3), p.2133-2135

2003

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IKK inhibitor bay 11‐7082 induces necroptotic cell death in precursor‐B acute lymphoblastic leukaemic blasts

British journal of haematology, 2010-02, Vol.148 (3), p.487-490

2010

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High-performance InAs quantum-dot lasers near 1.3 μm

Applied physics letters, 2001-11, Vol.79 (22), p.3570-3572

2001

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Effect of well width on three-color quantum dots-in-a-well infrared detectors

IEEE photonics technology letters, 2005-05, Vol.17 (5), p.1064-1066

2005

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Multi-watt 1.25 μm quantum dot VECSEL

Electronics letters, 2010-06, Vol.46 (12), p.856-857

2010

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Orientation dependence of the optical properties in InAs quantum-dash lasers on InP

Applied physics letters, 2002-08, Vol.81 (6), p.981-983

2002

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Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K

Applied physics letters, 2003-04, Vol.82 (16), p.2574-2576

2003

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Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

IEEE photonics technology letters, 2000-06, Vol.12 (6), p.591-593

2000

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The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

IEEE journal of quantum electronics, 2000-11, Vol.36 (11), p.1272-1279

2000

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Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

IEEE photonics technology letters, 1999-08, Vol.11 (8), p.931-933

1999

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Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure

Optics express, 2008-01, Vol.16 (2), p.1165-1173

2008

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Optical characterizations of heavily doped p-type AlxGa1−xAs and GaAs epitaxial films at terahertz frequencies

Journal of applied physics, 2005-05, Vol.97 (9)

2005

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Demonstration of Bias-Controlled Algorithmic Tuning of Quantum Dots in a Well (DWELL) MidIR Detectors

IEEE journal of quantum electronics, 2009-06, Vol.45 (6), p.674-683

2009

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Impact of composition of AlGaInAs confining barriers on emission of InAs quantum dots embedded in AlGaAs/GaAs dot-in-a-well heterostructures

Optical materials, 2024-10, Vol.156, p.116032, Article 116032

2024

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Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing

Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers

Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/InxAlyGazAs/GaAs quantum wells

Room-temperature operation of InAs quantum-dash lasers on InP [001]

Theoretical modeling and experimental characterization of InAs∕InGaAs quantum dots in a well detector

High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector

Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes

Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector

Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers

InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers

IKK inhibitor bay 11‐7082 induces necroptotic cell death in precursor‐B acute lymphoblastic leukaemic blasts

High-performance InAs quantum-dot lasers near 1.3 μm

Effect of well width on three-color quantum dots-in-a-well infrared detectors

Multi-watt 1.25 μm quantum dot VECSEL

Orientation dependence of the optical properties in InAs quantum-dash lasers on InP

Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K

Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

Optical characteristics of 1.24-μm InAs quantum-dot laser diodes

Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure

Optical characterizations of heavily doped p-type AlxGa1−xAs and GaAs epitaxial films at terahertz frequencies

Demonstration of Bias-Controlled Algorithmic Tuning of Quantum Dots in a Well (DWELL) MidIR Detectors

Impact of composition of AlGaInAs confining barriers on emission of InAs quantum dots embedded in AlGaAs/GaAs dot-in-a-well heterostructures

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