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Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.853-859

2020

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Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate

Semiconductors (Woodbury, N.Y.), 2022-02, Vol.56 (2), p.101-106

2022

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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1352-1359

2020

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Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.975-981

2020

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Erbium upconversion luminescence from sol-gel derived multilayer porous inorganic perovskite film

Journal of advanced dielectrics, 2022-04, Vol.12 (2)

2022

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Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1329-1333

2019

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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Nanotechnology, 2024-04, Vol.35 (16), p.165203

2024

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Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Semiconductor science and technology, 2019-02, Vol.34 (2), p.24003

2019

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Luminescent Properties of Ordered Arrays of Silicon Disk-Like Resonators with Embedded GeSi Quantum Dots

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (2), p.180-186

2024

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Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels

Semiconductors (Woodbury, N.Y.), 2021-09, Vol.55 (9), p.735-740

2021

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Upconversion Luminescence of Er3+ Ions from Barium Titanate Xerogel Powder and Target Fabricated by Explosive Compaction Method

Journal of applied spectroscopy, 2022-05, Vol.89 (2), p.238-243

2022

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Silicon and germanium nanostructures formed by spark discharge plasma

Journal of physics. Conference series, 2019-06, Vol.1238 (1), p.12052

2019

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Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

Semiconductors (Woodbury, N.Y.), 2018-09, Vol.52 (9), p.1150-1155

2018

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Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.353-356

2017

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Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies

Journal of crystal growth, 2006-02, Vol.288 (1), p.65-69

2006

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The processes of erbium impurity excitation in Si/Si1−xGex:Er/Si heteroepitaxial structures

Optical materials, 2013-05, Vol.35 (7), p.1404-1409

2013

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Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1248-1253

2016

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The visible and near IR photoluminescent response of nc-Si:Er thin films produced by rf sputtering

Nanotechnology, 2004-07, Vol.15 (7), p.802-806

2004

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Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate

Journal of luminescence, 2022-09, Vol.249, p.119033, Article 119033

2022

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Photonic crystal band structure in luminescence response of samples with Ge/Si quantum dots grown on pit-patterned SOI substrates

Photonics and nanostructures, 2023-02, Vol.53, p.101093, Article 101093

2023

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Modification of erbium photoluminescence excitation spectra for the emission wavelength 1.54 μm in mesoscopic structures

Journal of luminescence, 2006-12, Vol.121 (2), p.217-221

2006

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Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-01, Vol.146 (1), p.256-259

2008

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Optical properties of erbium-doped xerogels embedded in porous anodic alumina

Optical materials, 2006-05, Vol.28 (6), p.688-692

2006

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Theoretical analysis of microdisk resonators based on Si/Si1−xGex:Er light-emitting structures

Journal of luminescence, 2012-12, Vol.132 (12), p.3122-3124

2012

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On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

Semiconductors (Woodbury, N.Y.), 2016-08, Vol.50 (8), p.1112-1116

2016

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Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Erbium upconversion luminescence from sol-gel derived multilayer porous inorganic perovskite film

Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Luminescent Properties of Ordered Arrays of Silicon Disk-Like Resonators with Embedded GeSi Quantum Dots

Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels

Upconversion Luminescence of Er3+ Ions from Barium Titanate Xerogel Powder and Target Fabricated by Explosive Compaction Method

Silicon and germanium nanostructures formed by spark discharge plasma

Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics

Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies

The processes of erbium impurity excitation in Si/Si1−xGex:Er/Si heteroepitaxial structures

Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

The visible and near IR photoluminescent response of nc-Si:Er thin films produced by rf sputtering

Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate

Photonic crystal band structure in luminescence response of samples with Ge/Si quantum dots grown on pit-patterned SOI substrates

Modification of erbium photoluminescence excitation spectra for the emission wavelength 1.54 μm in mesoscopic structures

Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

Optical properties of erbium-doped xerogels embedded in porous anodic alumina

Theoretical analysis of microdisk resonators based on Si/Si1−xGex:Er light-emitting structures

On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

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