UB Paderborn / Katalog / Suche / in CDI

Interactions of deposited Ca with TiSe2 and TiTe2 surfaces

Journal of physics communications, 2023-02, Vol.7 (2), p.025006

Starnberg, H I

2023

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Deposition of Ca on the 2H–NbSe2 surface: Competing processes

The Journal of chemical physics, 2024-04, Vol.160 (16)

Starnberg, H. I.

2024

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Atomic origin of the scanning tunneling microscopy images of charge-density-waves on 1T-TaSe2

Physica. B, Condensed matter, 2008-07, Vol.403 (13-16), p.2207-2210

2008

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Na and Cs intercalation of 2H-TaSe2 studied by photoemission

Journal of physics. Condensed matter, 2001-11, Vol.13 (44), p.9879-9895

2001

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Photoelectron microscopy study of the intercalation process in the Cs/4Hb–TaS2 system

Journal of physics. Condensed matter, 2003-08, Vol.15 (30), p.5231-5242

2003

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Evidence for Rb intercalation in TiTe2

Europhysics letters, 2003-12, Vol.64 (6), p.816-822

2003

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Stabilization of the misfit layer compound (PbS)1.13TaS2 by metal cross substitution

Physical review letters, 2008-02, Vol.100 (6), p.065502-065502

2008

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Interactions of deposited Ca with TiSe 2 and TiTe 2 surfaces

Journal of physics communications, 2023-02, Vol.7 (2), p.25006

Starnberg, H I

2023

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Absolute determination of the layer-perpendicular band structure of VSe2 and TiS2 by combined very-low-energy electron diffraction and photoemission

Journal of physics. Condensed matter, 1998-07, Vol.10 (26), p.5749-5766

1998

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Modifying the electronic structure of TiS2 by alkali metal intercalation

Journal of physics. Condensed matter, 1999-11, Vol.11, p.8957

1999

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3D-to-2D transition by Cs intercalation of VSe2

Physical review letters, 1993-05, Vol.70 (20), p.3111-3114

1993

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In-situ intercalation of VSe2(0001) with K : direct observation of near-surface structure transformation by incoherent medium-energy electron diffraction

Surface science, 2000-08, Vol.461 (1-3), p.137-145

2000

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Low temperature adsorption of Cs on layered TiS2 studied by photoelectron spectroscopy

Surface science, 1997-07, Vol.384 (1-3), p.L785-L790

1997

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In situ intercalation of the layered compounds TiS2, ZrSe2 and VSe2

Surface science, 1995-07, Vol.331-333, p.419-424

1995

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Very-low-energy electron diffraction as a direct probe for unoccupied band structure: principles, results, implications in photoemission

Applied surface science, 1999-04, Vol.142 (1), p.311-315

1999

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The electronic structure of ZrSe2 and CsxZrSe2 studied by angle-resolved photoelectron spectroscopy

Journal of physics. Condensed matter, 1995-10, Vol.7 (40), p.7741-7760

1995

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Conduction band structure of VSe2 studied by inverse photoemission, secondary electron emission and total current spectroscopies

Journal of physics. Condensed matter, 1992-04, Vol.4 (15), p.4075-4082

1992

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Rb deposition on TiSe2 and TiTe2 at 100 K and at room temperature studied by photoelectron spectroscopy

Physical review. B, Condensed matter and materials physics, 2005-03, Vol.71 (12), p.125403.1-125403.11

2005

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Absolute Band Mapping by Combined Angle-Dependent Very-Low-Energy Electron Diffraction and Photoemission: Application to Cu

Physical review letters, 1998-11, Vol.81 (22), p.4943-4946

1998

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New aspects in the oxidation kinetics of alkali-metal promoted group IV and III-V semiconductor surfaces

Surface science, 1989-01, Vol.224 (1), p.13-30

1989

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Three-dimensional unoccupied band structure of graphite: Very-low-energy electron diffraction and band calculations

Physical review. B, Condensed matter, 2000-02, Vol.61 (7), p.4994-5001

2000

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Core level and valence band studies of layered Ti3SiC2 by high resolution photoelectron spectroscopy

The Journal of physics and chemistry of solids, 2003-12, Vol.64 (12), p.2321-2328

2003

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Thermal effects in angle-resolved photoemission: is it possible to separate direct and indirect transitions?

Surface science, 1993-05, Vol.287, p.776-779, Article 776

1993

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Determining unoccupied bands of layered materials by VLEED: implications for photoemission band mapping

Journal of physics. Condensed matter, 1996-10, Vol.8 (41), p.7549-7559

1996

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Electronic promotion of silicon nitridation by alkali metals

Physical review letters, 1987-09, Vol.59 (13), p.1488-1491

1987

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Interactions of deposited Ca with TiSe2 and TiTe2 surfaces

Deposition of Ca on the 2H–NbSe2 surface: Competing processes

Atomic origin of the scanning tunneling microscopy images of charge-density-waves on 1T-TaSe2

Na and Cs intercalation of 2H-TaSe2 studied by photoemission

Photoelectron microscopy study of the intercalation process in the Cs/4Hb–TaS2 system

Evidence for Rb intercalation in TiTe2

Stabilization of the misfit layer compound (PbS)1.13TaS2 by metal cross substitution

Interactions of deposited Ca with TiSe 2 and TiTe 2 surfaces

Absolute determination of the layer-perpendicular band structure of VSe2 and TiS2 by combined very-low-energy electron diffraction and photoemission

Modifying the electronic structure of TiS2 by alkali metal intercalation

3D-to-2D transition by Cs intercalation of VSe2

In-situ intercalation of VSe2(0001) with K : direct observation of near-surface structure transformation by incoherent medium-energy electron diffraction

Low temperature adsorption of Cs on layered TiS2 studied by photoelectron spectroscopy

In situ intercalation of the layered compounds TiS2, ZrSe2 and VSe2

Very-low-energy electron diffraction as a direct probe for unoccupied band structure: principles, results, implications in photoemission

The electronic structure of ZrSe2 and CsxZrSe2 studied by angle-resolved photoelectron spectroscopy

Conduction band structure of VSe2 studied by inverse photoemission, secondary electron emission and total current spectroscopies

Rb deposition on TiSe2 and TiTe2 at 100 K and at room temperature studied by photoelectron spectroscopy

Absolute Band Mapping by Combined Angle-Dependent Very-Low-Energy Electron Diffraction and Photoemission: Application to Cu

New aspects in the oxidation kinetics of alkali-metal promoted group IV and III-V semiconductor surfaces

Three-dimensional unoccupied band structure of graphite: Very-low-energy electron diffraction and band calculations

Core level and valence band studies of layered Ti3SiC2 by high resolution photoelectron spectroscopy

Thermal effects in angle-resolved photoemission: is it possible to separate direct and indirect transitions?

Determining unoccupied bands of layered materials by VLEED: implications for photoemission band mapping

Electronic promotion of silicon nitridation by alkali metals

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