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Interaction between the components in Tm-Cr-Ge system at 1070 K

Fìzika ì hìmìâ tverdogo tìla (Online), 2022-12, Vol.23 (4), p.633-639

2022

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Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn

Fìzika ì hìmìâ tverdogo tìla (Online), 2024-02, Vol.25 (1), p.157-163

2024

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Phase equilibrium diagram of Y-Cu-Sb system at 870 K

Fìzika ì hìmìâ tverdogo tìla (Online), 2023-01, Vol.24 (4), p.610-615

2023

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The influence of heavy doping of TiCoSb intermetallic semiconductor with Cr atoms on structural, kinetic and energetic properties

Fìzika ì hìmìâ tverdogo tìla (Online), 2024-06, Vol.25 (2), p.391-398

2024

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Phase equilibrium diagram of the Hf-Fe-Sn system at 1070 K

Fìzika ì hìmìâ tverdogo tìla (Online), 2021-12, Vol.22 (4), p.761-766

2021

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Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.139-145

2017

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Peculiarities of structural, electrokinetic, energetic, and magnetic properties semiconductive solid solution Lu1-xVxNiSb

Fìzika ì hìmìâ tverdogo tìla (Online), 2023-01, Vol.24 (1), p.84-91

2023

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Features of the Generation of Energy States in the Lu1 – xVxNiSb Semiconductor

Ukrainian journal of physics (Kiev), 2023-06, Vol.68 (4), p.274

2023

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Modeling of the properties of the semiconductor solid solution Lu1-xVxNiSb in the presence of magnetic ordering

Fìzika ì hìmìâ tverdogo tìla (Online), 2023-01, Vol.24 (3), p.503-508

2023

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Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. II. Modeling of characteristics

Fìzika ì hìmìâ tverdogo tìla (Online), 2022-09, Vol.23 (3), p.497-504

2022

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Phase equilibria in the Gd–Cr–Ge system at 1070 K

Fìzika ì hìmìâ tverdogo tìla (Online), 2021-05, Vol.22 (2), p.248-254

2021

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Phase equilibria in Ho-Fe-Sn ternary system at 670 K

Fìzika ì hìmìâ tverdogo tìla (Online), 2020-06, Vol.21 (2), p.272-278

2020

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Study of the structural, electrokinetic and magnetic characteristics of the Er1-xZrxNiSb semiconductor

Fìzika ì hìmìâ tverdogo tìla (Online), 2021-12, Vol.21 (4), p.689-694

2021

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Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. I. Experimental results

Fìzika ì hìmìâ tverdogo tìla (Online), 2022-04, Vol.23 (2), p.235-241

2022

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Modeling of structural and energetic parameters of р-Er1-xScxNiSb semiconductor

Fìzika ì hìmìâ tverdogo tìla (Online), 2021-09, Vol.22 (3), p.509-515

2021

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Synthesis and electrical transport properties of Er1-xScxNiSb semiconducting solid solution

Fìzika ì hìmìâ tverdogo tìla (Online), 2021-03, Vol.22 (1), p.146-152

2021

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Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution

Fìzika ì hìmìâ tverdogo tìla (Online), 2020-01, Vol.21 (1), p.73-81

2020

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Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

Semiconductors (Woodbury, N.Y.), 2013-07, Vol.47 (7), p.892-898

2013

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Interaction of the components in the Gd-Mn-Sn ternary system at 873 and 673 K

Fìzika ì hìmìâ tverdogo tìla (Online), 2018-04, Vol.19 (1), p.60-65

2018

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Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor

Semiconductors (Woodbury, N.Y.), 2016-07, Vol.50 (7), p.860-868

2016

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Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7), p.850-856

2011

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Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity

Semiconductors (Woodbury, N.Y.), 2013-09, Vol.47 (9), p.1145-1152

2013

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Features of conductivity of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity

Semiconductors (Woodbury, N.Y.), 2012-07, Vol.46 (7), p.887-893

2012

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Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1545-1551

2014

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Conductivity mechanisms in heavy-doped n-ZrNiSn intermetallic semiconductors

Journal of alloys and compounds, 2007-07, Vol.438 (1), p.8-14

2007

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Interaction between the components in Tm-Cr-Ge system at 1070 K

Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn

Phase equilibrium diagram of Y-Cu-Sb system at 870 K

The influence of heavy doping of TiCoSb intermetallic semiconductor with Cr atoms on structural, kinetic and energetic properties

Phase equilibrium diagram of the Hf-Fe-Sn system at 1070 K

Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

Peculiarities of structural, electrokinetic, energetic, and magnetic properties semiconductive solid solution Lu1-xVxNiSb

Features of the Generation of Energy States in the Lu1 – xVxNiSb Semiconductor

Modeling of the properties of the semiconductor solid solution Lu1-xVxNiSb in the presence of magnetic ordering

Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. II. Modeling of characteristics

Phase equilibria in the Gd–Cr–Ge system at 1070 K

Phase equilibria in Ho-Fe-Sn ternary system at 670 K

Study of the structural, electrokinetic and magnetic characteristics of the Er1-xZrxNiSb semiconductor

Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. I. Experimental results

Modeling of structural and energetic parameters of р-Er1-xScxNiSb semiconductor

Synthesis and electrical transport properties of Er1-xScxNiSb semiconducting solid solution

Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution

Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

Interaction of the components in the Gd-Mn-Sn ternary system at 873 and 673 K

Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor

Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor

Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity

Features of conductivity of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity

Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru

Conductivity mechanisms in heavy-doped n-ZrNiSn intermetallic semiconductors

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