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Interface broadening in as-grown MOVPE InP/GaInAs MQW structures : dominant intermixing of group V elements directly revealed by Auger analysis of a chemically bevelled section

Journal of crystal growth, 1993-05, Vol.130 (1-2), p.51-58

1993

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Metalorganic vapour phase epitaxy growth of InPAsSb alloys lattice matched to InAs

Journal of crystal growth, 1994-10, Vol.143 (3), p.155-161

1994

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Low threshold current, high output power buried heterostructure MQW lasers with strained InGaAsP wells

Electronics letters, 1992-01, Vol.28 (19), p.1819-1821

1992

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Broadband operation of InGaAsP-InGaAs GRIN-SC-MQW BH amplifiers with 115 mW output power

Electronics letters, 1990, Vol.26 (8), p.512-513

1990

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Control of parallel conduction in MOVPE grown InP based HFETs

Electronics letters, 1994-08, Vol.30 (17), p.1453-1455

1994

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Characterization of InP to GaInAs and GaInAs to InP interfaces using tilted cleaved corner TEM

Journal of crystal growth, 1992-11, Vol.124 (1), p.604-609

1992

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An investigation of lithium transport properties in V6O13 single crystals

Solid state ionics, 1986-09, Vol.21 (2), p.151-158

1986

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The role of MOVPE in the manufacture of high performance InP based optoelectronic devices

Journal of crystal growth, 1988, Vol.93 (1-4), p.792-802

1988

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Reliable 1.5 μm buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy (MOVPE)

Electronics letters, 1989-10, Vol.25 (21), p.1449-1451

1989

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Intensity noise in 1.5 μm GaInAs quantum well buried heterostructure lasers

Electronics letters, 1989-08, Vol.25 (17), p.1183-1184

1989

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Raman scattering in Ga0.47In0.53As/InP superlattices grown by metalorganic vapor phase epitaxy

Applied physics letters, 1987-09, Vol.51 (10), p.758-760

1987

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New approach to growth of abrupt heterojunctions by MOVPE

Electronics letters, 1984-01, Vol.20 (23), p.978-980

1984

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High-performance, high-reliability buried heterostructure lasers by MOVPE

Electronics letters, 1988, Vol.24 (9), p.519-521

1988

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242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity

Electronics letters, 1990, Vol.26 (4), p.267-269

1990

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Chromium-doped semi-insulating InP grown by metalorganic vapour phase epitaxy

Journal of crystal growth, 1994, Vol.140 (1), p.19-27

1994

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High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy

Journal of electronic materials, 1994-02, Vol.23 (2), p.81-85

1994

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Long-term reliability of strain-compensated InGaAs(P)/InP MQW BH lasers

Electronics letters, 1994-02, Vol.30 (3), p.227-229

1994

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Low-loss single-mode InP/InGaAsP waveguides grown by MOVPE

Electronics letters, 1987, Vol.23 (13), p.701-703

1987

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The influence of growth conditions on the planarity of MOVPE grown GaInAs(P) interfaces

Journal of crystal growth, 1991, Vol.107 (1), p.215-220

1991

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A TEM study of GaInAsP/InP heterojunctions grown by atmospheric pressure MOVPE

Materials letters, 1986-08, Vol.4 (8), p.353-356

1986

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Behaviour of LixV6O13 and LixTiS2 composite electrodes incorporating polyethylene oxide based electrolytes

Solid state ionics, 1983-01, Vol.9-10, p.391-398

1983

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Interference filters using indium phosphide-based epitaxial layers grown by metalorganic vapor phase epitaxy

Applied physics letters, 1989-10, Vol.55 (17), p.1713-1714

1989

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Growth of GaxIn1 −xAs and GaxIn1 −xAsyP1 −y using preformed adducts

Journal of crystal growth, 1984-09, Vol.68 (1), p.96-101

1984

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Polarisation-insensitive, near-travelling-wave semiconductor laser amplifiers at 1.5 μm

Electronics letters, 1989-03, Vol.25 (5), p.314-315

1989

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Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPE

Electronics letters, 1985, Vol.21 (8), p.329

1985

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Interface broadening in as-grown MOVPE InP/GaInAs MQW structures : dominant intermixing of group V elements directly revealed by Auger analysis of a chemically bevelled section

Metalorganic vapour phase epitaxy growth of InPAsSb alloys lattice matched to InAs

Low threshold current, high output power buried heterostructure MQW lasers with strained InGaAsP wells

Broadband operation of InGaAsP-InGaAs GRIN-SC-MQW BH amplifiers with 115 mW output power

Control of parallel conduction in MOVPE grown InP based HFETs

Characterization of InP to GaInAs and GaInAs to InP interfaces using tilted cleaved corner TEM

An investigation of lithium transport properties in V6O13 single crystals

The role of MOVPE in the manufacture of high performance InP based optoelectronic devices

Reliable 1.5 μm buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy (MOVPE)

Intensity noise in 1.5 μm GaInAs quantum well buried heterostructure lasers

Raman scattering in Ga0.47In0.53As/InP superlattices grown by metalorganic vapor phase epitaxy

New approach to growth of abrupt heterojunctions by MOVPE

High-performance, high-reliability buried heterostructure lasers by MOVPE

242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity

Chromium-doped semi-insulating InP grown by metalorganic vapour phase epitaxy

High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy

Long-term reliability of strain-compensated InGaAs(P)/InP MQW BH lasers

Low-loss single-mode InP/InGaAsP waveguides grown by MOVPE

The influence of growth conditions on the planarity of MOVPE grown GaInAs(P) interfaces

A TEM study of GaInAsP/InP heterojunctions grown by atmospheric pressure MOVPE

Behaviour of LixV6O13 and LixTiS2 composite electrodes incorporating polyethylene oxide based electrolytes

Interference filters using indium phosphide-based epitaxial layers grown by metalorganic vapor phase epitaxy

Growth of GaxIn1 −xAs and GaxIn1 −xAsyP1 −y using preformed adducts

Polarisation-insensitive, near-travelling-wave semiconductor laser amplifiers at 1.5 μm

Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPE

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