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First direct observation of a nearly ideal graphene band structure

Physical review letters, 2009-11, Vol.103 (22), p.226803-226803, Article 226803

2009

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Graphene etching on SiC grains as a path to interstellar polycyclic aromatic hydrocarbons formation

Nature communications, 2014-01, Vol.5 (1), p.3054-3054, Article 3054

2014

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Local investigation of the emissive properties of LaB6–ZrB2 eutectics

Journal of materials science, 2017-05, Vol.52 (10), p.5537-5543

2017

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Engineering Cubic Silicon Carbide Surfaces Properties Using Hydrogen: Metallization versus Passivation

Applied physics. A, Materials science & processing, 2006, Vol.82 (3), p.421-430

Soukiassian, P.

2006

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Correction to: Local investigation of the emissive properties of LaB6–ZrB2 eutectics

Journal of materials science, 2018-07, Vol.53 (13), p.9877-9877

2018

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Cubic silicon carbide surface reconstructions and Si (C) nanostructures at the atomic scale

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-11, Vol.96 (2), p.115-131

Soukiassian, P.

2002

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Surface relaxation and rumpling of Sn-doped β − Ga2 O3 ( 010 )

Physical review. B, 2020-12, Vol.102 (24)

2020

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Silicon carbide surface oxidation and SiO2/SiC interface formation investigated by soft X-ray synchrotron radiation

Journal of electron spectroscopy and related phenomena, 2005-06, Vol.144-147 (Complete), p.783-788

2005

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Nano-structures developing at the graphene/silicon carbide interface

Surface science, 2011-03, Vol.605 (5), p.L6-L11

2011

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Almost zero reflectance of a silicon oxynitride/porous silicon double layer antireflection coating for silicon photovoltaic cells

Journal of physics. D, Applied physics, 2006-04, Vol.39 (8), p.1623-1625

2006

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Atomic scale control and understanding of cubic silicon carbide surface reconstructions, nanostructures and nanochemistry

Journal of physics. Condensed matter, 2004-05, Vol.16 (17), p.S1611-S1658

2004

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Epitaxial graphene: the material for graphene electronics

Physica status solidi. PSS-RRL. Rapid research letters, 2009-09, Vol.3 (6), p.A91-A94

2009

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Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization

Nature materials, 2003-04, Vol.2 (4), p.253-258

2003

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Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface

Surface science, 2010-07, Vol.604 (13), p.1127-1134

2010

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Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.506-515

Soukiassian, P.

1999

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Investigations of hydrogen sensors made of porous silicon

Thin solid films, 2008-11, Vol.517 (1), p.239-241

2008

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Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

Journal of physics. D, Applied physics, 2008-08, Vol.41 (16), p.162004-162004 (5)

2008

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Highly Stable Si Atomic Line Formation on the β -SiC(100) Surface

Physical review letters, 1997-09, Vol.79 (13), p.2498-2501

1997

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Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride

Applied physics letters, 1996-01, Vol.68 (2), p.217-219

1996

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Direct Observation of a β -SiC(100)- c ( 4 × 2 ) Surface Reconstruction

Physical review letters, 1997-02, Vol.78 (5), p.907-910

1997

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Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3)

Physical review letters, 2001-05, Vol.86 (19), p.4342-4345

2001

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Atomic-Scale Passivation of Silicon Carbide Surfaces

Materials science forum, 2002-04, Vol.389-393, p.691-696, Article 691

Soukiassian, P.

2002

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Atomic Scale Oxidation of a Complex System: O 2 / α -SiC(0001)-( 3 × 3 )

Physical review letters, 2001-05, Vol.86 (19), p.4342-4345

2001

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A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Applied surface science, 2006-05, Vol.252 (15), p.5445-5448

2006

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Hydrogen sensitive gas sensor based on porous silicon/TiO2-x structure

Physica. E, Low-dimensional systems & nanostructures, 2007-04, Vol.38 (1-2), p.219-221

2007

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First direct observation of a nearly ideal graphene band structure

Graphene etching on SiC grains as a path to interstellar polycyclic aromatic hydrocarbons formation

Local investigation of the emissive properties of LaB6–ZrB2 eutectics

Engineering Cubic Silicon Carbide Surfaces Properties Using Hydrogen: Metallization versus Passivation

Correction to: Local investigation of the emissive properties of LaB6–ZrB2 eutectics

Cubic silicon carbide surface reconstructions and Si (C) nanostructures at the atomic scale

Surface relaxation and rumpling of Sn-doped β − Ga2 O3 ( 010 )

Silicon carbide surface oxidation and SiO2/SiC interface formation investigated by soft X-ray synchrotron radiation

Nano-structures developing at the graphene/silicon carbide interface

Almost zero reflectance of a silicon oxynitride/porous silicon double layer antireflection coating for silicon photovoltaic cells

Atomic scale control and understanding of cubic silicon carbide surface reconstructions, nanostructures and nanochemistry

Epitaxial graphene: the material for graphene electronics

Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization

Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface

Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines

Investigations of hydrogen sensors made of porous silicon

Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

Highly Stable Si Atomic Line Formation on the β -SiC(100) Surface

Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride

Direct Observation of a β -SiC(100)- c ( 4 × 2 ) Surface Reconstruction

Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3)

Atomic-Scale Passivation of Silicon Carbide Surfaces

Atomic Scale Oxidation of a Complex System: O 2 / α -SiC(0001)-( 3 × 3 )

A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Hydrogen sensitive gas sensor based on porous silicon/TiO2-x structure

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