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Study of Laser Lift-Off Process for Fabrication of GaN-Based 365-nm Ultraviolet Absorption Layer Removed Flip Chip LED

Transactions on Electrical and Electronic Materials, 2018, 19(3), , pp.230-234

2018

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Generalized Electron Emission Theory for One-Dimensional Conducting Materials

Applied sciences, 2024-04, Vol.14 (7), p.2993

2024

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Ionization of helium gas with a tungsten tip

Journal of Information Display, 2009, 10(1), , pp.45-48

2009

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Size effect of thermal radiation

Physica. B, Condensed matter, 2010-01, Vol.405 (2), p.638-641

2010

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Surface-discharge characteristics of magnesium oxide thin films prepared by ion beam-assisted deposition

Surface & coatings technology, 2003, Vol.162 (1), p.11-18

2003

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Improvement in breakdown voltage characteristics of SiC Schottky barrier diode by incorporating a guard ring-assisted field limiting ring and an internal ring

Physica status solidi. A, Applications and materials science, 2006-12, Vol.203 (15), p.3873-3881

2006

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Fabrication of a large LCD backlight unit with red, green, and blue LED lamps

Journal of Information Display, 2009, 10(3), , pp.97-100

2009

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Development of a very small LED lamp with a low-thermal-resistance lead frame for an LCD backlight unit

Journal of Information Display, 2009, 10(2), , pp.49-53

2009

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Physical phenomena for zero temperature limit

Journal of the Korean Physical Society, 2024-07, Vol.85 (2), p.129-137

2024

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Vertical chip of GaN-based light-emitting diode formed on sapphire substrate

Physica status solidi. A, Applications and materials science, 2005-08, Vol.202 (10), p.2034-2039

2005

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Effect of Bi2O3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn2SiO4 Ceramics

International journal of applied ceramic technology, 2009-09, Vol.6 (5), p.581-586

2009

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Detection of Pressure Waves in Water by Using Optical Techniques

Journal of the Korean Physical Society, 2008, 53(4), , pp.1906-1909

2008

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Laser Lift-Off of the Sapphire Substrate for Fabricating Through-AlN-Via Wafer Bonded Absorption Layer Removed Thin Film Ultraviolet Flip Chip LED

Transactions on Electrical and Electronic Materials, 2021, 22(2), , pp.128-132

2021

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Microscopic mechanism of electrical noise in Co/Si thin film structures

Japanese Journal of Applied Physics, 1996-06, Vol.35 (6A), p.L695-L698

1996

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Study of Laser Lift-Off Process for Fabrication of GaN-Based 365-nm Ultraviolet Absorption Layer Removed Flip Chip LED

Transactions on electrical and electronic materials, 2018, Vol.19 (3), p.230-234

2018

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High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electron diffraction patterns

Japanese Journal of Applied Physics, 1996-03, Vol.35 (3A), p.L289-L292

1996

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P-58: Surface-discharge Characteristics of Magnesium Oxide Thin Films Prepared by Ion Beam-assisted Deposition

SID International Symposium Digest of technical papers, 2002-05, Vol.33 (1), p.420-423

2002

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Very low resistance ohmic contacts to n-GaN

Journal of electronic materials, 1998-07, Vol.27 (7), p.829-832

1998

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Effect of a seasonal diffuse pollution migration on natural organic matter behavior in a stratified dam reservoir

Journal of environmental sciences (China), 2010-01, Vol.22 (6), p.908-914

2010

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Finite Size Effect of One-dimensional Thermal Radiation

Journal of the Korean Physical Society, 2010, 56(2), , pp.554-557

2010

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Numerical calculation study on the generalized electron emission phenomenon

Journal of Information Display, 2009, 10(4), , pp.158-163

2009

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Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation

Japanese Journal of Applied Physics, 1989-12, Vol.28 (12A), p.L2119

1989

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Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices

Applied physics letters, 1991-04, Vol.58 (13), p.1407-1409

1991

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Numerical Calculation Study on the Generalized Electron Emission Phenomenon

Journal of Information Display, 2009, Vol.10 (4), p.158-163

2009

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Ionization of Helium Gas with a Tungsten Tip

Journal of Information Display, 2009, Vol.10 (1), p.45-48

2009

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Study of Laser Lift-Off Process for Fabrication of GaN-Based 365-nm Ultraviolet Absorption Layer Removed Flip Chip LED

Generalized Electron Emission Theory for One-Dimensional Conducting Materials

Ionization of helium gas with a tungsten tip

Size effect of thermal radiation

Surface-discharge characteristics of magnesium oxide thin films prepared by ion beam-assisted deposition

Improvement in breakdown voltage characteristics of SiC Schottky barrier diode by incorporating a guard ring-assisted field limiting ring and an internal ring

Fabrication of a large LCD backlight unit with red, green, and blue LED lamps

Development of a very small LED lamp with a low-thermal-resistance lead frame for an LCD backlight unit

Physical phenomena for zero temperature limit

Vertical chip of GaN-based light-emitting diode formed on sapphire substrate

Effect of Bi2O3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn2SiO4 Ceramics

Detection of Pressure Waves in Water by Using Optical Techniques

Laser Lift-Off of the Sapphire Substrate for Fabricating Through-AlN-Via Wafer Bonded Absorption Layer Removed Thin Film Ultraviolet Flip Chip LED

Microscopic mechanism of electrical noise in Co/Si thin film structures

Study of Laser Lift-Off Process for Fabrication of GaN-Based 365-nm Ultraviolet Absorption Layer Removed Flip Chip LED

High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electron diffraction patterns

P-58: Surface-discharge Characteristics of Magnesium Oxide Thin Films Prepared by Ion Beam-assisted Deposition

Very low resistance ohmic contacts to n-GaN

Effect of a seasonal diffuse pollution migration on natural organic matter behavior in a stratified dam reservoir

Finite Size Effect of One-dimensional Thermal Radiation

Numerical calculation study on the generalized electron emission phenomenon

Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation

Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices

Numerical Calculation Study on the Generalized Electron Emission Phenomenon

Ionization of Helium Gas with a Tungsten Tip

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