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Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2005-05, Vol.23 (3), p.1036-1040

2005

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Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier

Current applied physics, 2010-01, Vol.10 (1), p.e22-e26

2010

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Algicidal activity of the seaweed Corallina pilulifera against red tide microalgae

Journal of applied phycology, 2000, Vol.12 (1), p.37-43

2000

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Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2004, Vol.43 (4R), p.1566-1570

2004

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Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide

Japanese Journal of Applied Physics, 2004-04, Vol.43 (4S), p.1825

2004

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Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum

Japanese Journal of Applied Physics, 2004-05, Vol.43 (5A), p.L624

2004

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Impact of Thin WSIX Insertion in Tungsten Polymetal Gate on Gate Oxide Reliability and Gate Contact Resistance

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.374-378

2006

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IEEE_Xplore

Ecology of seaweed beds on two types of artificial reef

Journal of applied phycology, 2002-10, Vol.14 (5), p.343-349

2002

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Preparation of Silicon-on-Insulator Wafer Using Spin Etching and a Subsequent Selective Etching Process

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 8), p.5024-5029

2002

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Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate

Applied physics letters, 2005-05, Vol.86 (22)

2005

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Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.485-488

2004

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IEEE_Xplore

Highly Scalable Saddle-Fin (S-Fin) Transistor for Sub-50nm DRAM Technology

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers, 2006, p.32-33

2006

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IEEE_Xplore

Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process

Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-02, Vol.2 (8), p.1390-1395

2014

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Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process

Japanese Journal of Applied Physics, 2004-12, Vol.43 (12), p.8007-8012

2004

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Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

Integrated ferroelectrics, 2005-01, Vol.70 (1), p.89-97

2005

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Succession of seaweed communities on artificial reefs at Muronohana, Ikata, Japan

Fisheries science, 2002, Vol.68 (sup2), p.1755-1758

2002

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EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITION

Integrated ferroelectrics, 2005-01, Vol.74 (1), p.131-136

2005

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Adsorptive Desulfurization and Denitrogenation of Refinery Fuels Using Mesoporous Silica Adsorbents

Anisotropic mobility of small molecule-polymer blend channel in organic transistor: Characterization of channel materials and orientation

Reset First Resistive Switching in Ni1−xO Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering

Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

High current fast switching n-ZnO/p-Si diode

Influence of Hydrogen Incorporation on the Reliability of Gate Oxide Formed by Using Low-Temperature Plasma Selective Oxidation Applicable to Sub-50-nm W-Polymetal Gate Devices

Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films

Changes in thermal conductivity and bandgap of SiC single crystals in accordance with thermal stress

Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W∕WNx∕poly-Si gate MOSFET for high density DRAM applications

Physical and electrical characteristics of band-engineered Zr-silicate/SiO2 stacks for tunnel barrier

Algicidal activity of the seaweed Corallina pilulifera against red tide microalgae

Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition

Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide

Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum

Impact of Thin WSIX Insertion in Tungsten Polymetal Gate on Gate Oxide Reliability and Gate Contact Resistance

Ecology of seaweed beds on two types of artificial reef

Preparation of Silicon-on-Insulator Wafer Using Spin Etching and a Subsequent Selective Etching Process

Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate

Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions

Highly Scalable Saddle-Fin (S-Fin) Transistor for Sub-50nm DRAM Technology

Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process

Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process

Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

Succession of seaweed communities on artificial reefs at Muronohana, Ikata, Japan

EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITION

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