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Growth of bulk GaN crystals

Journal of applied physics, 2020-08, Vol.128 (5)

2020

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Recent progress in basic ammonothermal GaN crystal growth

Journal of crystal growth, 2020-10, Vol.547, p.125804, Article 125804

2020

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Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Semiconductor science and technology, 2016-09, Vol.31 (9), p.93002

2016

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Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Journal of crystal growth, 2018-10, Vol.499, p.1-7

2018

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Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates

Journal of electronic materials, 2019-04, Vol.48 (4), p.2226-2232

2019

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Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN

Journal of applied physics, 2018-08, Vol.124 (7)

2018

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A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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The influence of the substrate misorientation on the structural quality of GaN layers grown by HVPE

Journal of crystal growth, 2018-09, Vol.498 (C), p.346-351

2018

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Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Journal of crystal growth, 2016-12, Vol.456, p.80-85

2016

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Homoepitaxial HVPE GaN: A potential substrate for high performance devices

Journal of crystal growth, 2018-10, Vol.500, p.104-110

2018

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Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1030

2019

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Crystal growth of HVPE-GaN doped with germanium

Journal of crystal growth, 2017-12, Vol.480, p.102-107

2017

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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Journal of crystal growth, 2014-10, Vol.403, p.48-54

2014

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Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Journal of crystal growth, 2014-12, Vol.407, p.52-57

2014

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Homoepitaxial growth of HVPE-GaN doped with Si

Journal of crystal growth, 2016-12, Vol.456, p.91-96

2016

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Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results

Journal of crystal growth, 2016-12, Vol.456, p.86-90

2016

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Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties

Crystal growth & design, 2015-10, Vol.15 (10), p.4837-4842

2015

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Incorporation of pervasive impurities on HVPE GaN growth directions

Journal of crystal growth, 2016-12, Vol.456, p.101-107

2016

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HVPE GaN wafers with improved crystalline and electrical properties

Journal of crystal growth, 2016-12, Vol.456, p.113-120

2016

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HVPE-GaN growth on misoriented ammonothermal GaN seeds

Journal of crystal growth, 2014-10, Vol.403, p.32-37

2014

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Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Journal of crystal growth, 2017-10, Vol.475, p.121-126

2017

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Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

Journal of crystal growth, 2015-10, Vol.427, p.1-6

2015

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HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Journal of crystal growth, 2016-12, Vol.456, p.73-79

2016

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Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.5-10

2012

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Imported chikungunya cases in an area newly colonised by Aedes albopictus: mathematical assessment of the best public health strategy

Euro surveillance : bulletin européen sur les maladies transmissibles, 2016-05, Vol.21 (18), p.1

2016

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Growth of bulk GaN crystals

Recent progress in basic ammonothermal GaN crystal growth

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates

Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN

A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy

The influence of the substrate misorientation on the structural quality of GaN layers grown by HVPE

Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Homoepitaxial HVPE GaN: A potential substrate for high performance devices

Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

Crystal growth of HVPE-GaN doped with germanium

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Homoepitaxial growth of HVPE-GaN doped with Si

Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results

Growth of High Crystalline Quality HVPE-GaN Crystals with Controlled Electrical Properties

Incorporation of pervasive impurities on HVPE GaN growth directions

HVPE GaN wafers with improved crystalline and electrical properties

HVPE-GaN growth on misoriented ammonothermal GaN seeds

Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

Imported chikungunya cases in an area newly colonised by Aedes albopictus: mathematical assessment of the best public health strategy

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