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Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

Nano letters, 2016-06, Vol.16 (6), p.3703-3709

2016

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Spin-orbit-induced circulating currents in a semiconductor nanostructure

Physical review letters, 2014-05, Vol.112 (18), p.187201-187201, Article 187201

2014

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Spatial structure of an individual Mn acceptor in GaAs

Physical review letters, 2004-05, Vol.92 (21), p.216806-216806, Article 216806

2004

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Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning

Applied physics letters, 2006-01, Vol.88 (4)

2006

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Warping a single Mn acceptor wavefunction by straining the GaAs host

Nature materials, 2007-07, Vol.6 (7), p.512-515

2007

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g factors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

Physical review. B, Condensed matter and materials physics, 2012-04, Vol.85 (16), Article 165323

2012

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Current-induced spin polarization at a single heterojunction

Applied physics letters, 2004-12, Vol.85 (24), p.5929-5931

2004

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Spatial structure of Mn-Mn acceptor pairs in GaAs

Physical review letters, 2005-12, Vol.95 (25), p.256402.1-256402.4, Article 256402

2005

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Sign-reversal electron magnetization in Mn-doped semiconductor structures

Physical review. B, 2020-07, Vol.102 (4), p.1, Article 041202

2020

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Dispersion of the electron g factor anisotropy in InAs/InP self-assembled quantum dots

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

Nature physics, 2010-07, Vol.6 (7), p.534-538

2010

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Anisotropy of electron and hole g tensors of quantum dots: An intuitive picture based on spin-correlated orbital currents

Physical review. B, 2016-01, Vol.93 (3), Article 035311

2016

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Active tuning of the g -tensor in InGaAs/GaAs quantum dots via strain

Physical review. B, 2019-05, Vol.99 (19), p.195305, Article 195305

2019

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Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

Physical review. B, Condensed matter and materials physics, 2010-07, Vol.82 (3), Article 035303

2010

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Strain-induced g -factor tuning in single InGaAs/GaAs quantum dots

Physical review. B, 2016-12, Vol.94 (24), Article 245301

2016

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Surface induced asymmetry of acceptor wave functions

Physical review letters, 2010-02, Vol.104 (8), p.086404-086404, Article 086404

2010

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The role of dot height in determining exciton lifetimes in shallow InAs/GaAs quantum dots

Applied physics letters, 2010-01, Vol.96 (3)

2010

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Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation

Physical review. B, 2016-08, Vol.94 (8), Article 085308

2016

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Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well

Physical review. B, 2016-09, Vol.94 (11), Article 115307

2016

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Anisotropic spatial structure of deep acceptor states in GaAs and GaP

Physical review. B, Condensed matter and materials physics, 2008-02, Vol.77 (7), Article 075328

2008

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Current-Induced Spin Polarization at a Single Heterojunction

Physics of Semiconductors; Part B, 2005, Vol.772, p.1405-1406

2005

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Geometric and compositional influences on spin-orbit induced circulating currents in nanostructures

Physical review. B, Condensed matter and materials physics, 2014-10, Vol.90 (16), Article 165306

2014

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Coupling of ultrathin InAs layers as a tool for band-offset determination

Physical review. B, Condensed matter, 1999-04, Vol.59 (15), p.10315-10326

1999

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Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field

Physical review. B, Condensed matter and materials physics, 2013-11, Vol.88 (20), p.Article ID: 205203, Article 205203

2013

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The manifestation of Coulomb gap in photoluminescence of GaAs/AlGaAs quantum wells with positively charged acceptors

Solid state communications, 2012-12, Vol.152 (24), p.2185-2188

2012

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Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

Spin-orbit-induced circulating currents in a semiconductor nanostructure

Spatial structure of an individual Mn acceptor in GaAs

Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning

Warping a single Mn acceptor wavefunction by straining the GaAs host

g factors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

Current-induced spin polarization at a single heterojunction

Spatial structure of Mn-Mn acceptor pairs in GaAs

Sign-reversal electron magnetization in Mn-doped semiconductor structures

Dispersion of the electron g factor anisotropy in InAs/InP self-assembled quantum dots

Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

Anisotropy of electron and hole g tensors of quantum dots: An intuitive picture based on spin-correlated orbital currents

Active tuning of the g -tensor in InGaAs/GaAs quantum dots via strain

Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

Strain-induced g -factor tuning in single InGaAs/GaAs quantum dots

Surface induced asymmetry of acceptor wave functions

The role of dot height in determining exciton lifetimes in shallow InAs/GaAs quantum dots

Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation

Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well

Anisotropic spatial structure of deep acceptor states in GaAs and GaP

Current-Induced Spin Polarization at a Single Heterojunction

Geometric and compositional influences on spin-orbit induced circulating currents in nanostructures

Coupling of ultrathin InAs layers as a tool for band-offset determination

Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field

The manifestation of Coulomb gap in photoluminescence of GaAs/AlGaAs quantum wells with positively charged acceptors

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