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Interfaces in a-Si: H solar cell structures

Solar energy materials and solar cells, 1997-11, Vol.48 (1), p.351-363

1997

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Solution of the ZnO/p contact problem in a-Si:H solar cells

Solar energy materials and solar cells, 1996, Vol.41, p.485-492

1996

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Towards a better understanding of surfaces of hydrogenated amorphous silicon: investigation by STM and AFM

Journal of non-crystalline solids, 1998-05, Vol.227-230, p.78-82

1998

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Defect distributions in a-SixGe1−x:H

Journal of non-crystalline solids, 1998-05, Vol.227-230, p.432-436

1998

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Improved analysis of the constant photocurrent method

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1995-11, Vol.72 (5), p.489-504

1995

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Material Basis of Highly Stable a-Si:H Solar Cells

MRS proceedings, 1996, Vol.420, Article 33

1996

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Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method

Solar energy materials and solar cells, 1996, Vol.41, p.529-536

1996

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New insights into the ZnO/a-SiC:H(B) interface using XPS analysis

Fresenius' journal of analytical chemistry, 1997-05, Vol.358 (1-2), p.210-213

1997

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More Insights Into the ZnO/a-SiC:H(B) Interface - An Improved TCO/p Contact

MRS proceedings, 1996, Vol.426, Article 519

1996

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Surface and bulk density of states of a-Si:H determined by CPM and total-yield photoelectron spectroscopy

Journal of non-crystalline solids, 1991, Vol.137, p.339-342

1991

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Correlation between structure and optoelectronic properties of undoped microcrystalline silicon

Journal of non-crystalline solids, 1998-01, Vol.227, p.977-981

1998

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AFM and STM investigations of hydrogenated amorphous silicon : topography and barrier heights

Fresenius' journal of analytical chemistry, 1997-05, Vol.358 (1-2), p.338-340

1997

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The prefactor of the DC conductivity for amorphous silicon determined by combined contact potential difference and conductivity measurements

Journal of non-crystalline solids, 1989-12, Vol.114, p.357-359

1989

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Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), 1994, Vol.1, p.543-546 vol.1

1994

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More insights from CPM and PDS: Charged and neutral defects in a-Si:H

Solar energy materials and solar cells, 1997-12, Vol.49 (1), p.7-12

1997

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Solution of the ZnO/p contact problem in a-Si:H solar cells

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), 1994, Vol.1, p.500-503 vol.1

1994

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Defect distributions in a-Si Ge1−:H

Journal of non-crystalline solids, 1998-05, Vol.227-230, p.432-436

1998

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Correlation between Structure and Optoelectronic Properties of Undoped Microcrystalline Silicon

Japanese Journal of Applied Physics, 1998-04, Vol.37 (4R), p.1730

1998

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Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method

Journal of non-crystalline solids, 1996, Vol.198200, p.351-354

1996

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CPM and PDS - A Critical Interpretation of Experimental Results

MRS proceedings, 1996, Vol.420, Article 715

1996

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Improved Ambipolar Diffusion Length in a-Si1-xGex:H Alloys for Multi-Junction Solar Cells

MRS proceedings, 1995, Vol.377

1995

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Defect Distributions in Doped and Undoped A-SiGe:H Alloys

MRS proceedings, 1998, Vol.507, Article 403

1998

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The Interpretation of the Constant Photocurrent Method in Terms of Deep Defect Density of States in A-SI.H

MRS proceedings, 1994, Vol.336, Article 371

1994

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Towards a better understanding of surfaces of hydrogenated amorphous silicon : investigation by STM and AFM

Journal of non-crystalline solids, 1998, Vol.227-30, p.78-82

1998

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Correlation between structure and optoelectronic properties of undoped microcrystalline silicon

Journal of non-crystalline solids, 1998, Vol.227-30, p.977-981

1998

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Interfaces in a-Si: H solar cell structures

Solution of the ZnO/p contact problem in a-Si:H solar cells

Towards a better understanding of surfaces of hydrogenated amorphous silicon: investigation by STM and AFM

Defect distributions in a-SixGe1−x:H

Improved analysis of the constant photocurrent method

Material Basis of Highly Stable a-Si:H Solar Cells

Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method

New insights into the ZnO/a-SiC:H(B) interface using XPS analysis

More Insights Into the ZnO/a-SiC:H(B) Interface - An Improved TCO/p Contact

Surface and bulk density of states of a-Si:H determined by CPM and total-yield photoelectron spectroscopy

Correlation between structure and optoelectronic properties of undoped microcrystalline silicon

AFM and STM investigations of hydrogenated amorphous silicon : topography and barrier heights

The prefactor of the DC conductivity for amorphous silicon determined by combined contact potential difference and conductivity measurements

Charged and neutral defect states in a-Si:H determined from improved analysis of the constant photocurrent method

More insights from CPM and PDS: Charged and neutral defects in a-Si:H

Solution of the ZnO/p contact problem in a-Si:H solar cells

Defect distributions in a-Si Ge1−:H

Correlation between Structure and Optoelectronic Properties of Undoped Microcrystalline Silicon

Stable and metastable defect distributions in undoped and doped a-Si:H obtained from analysis of the constant photocurrent method

CPM and PDS - A Critical Interpretation of Experimental Results

Improved Ambipolar Diffusion Length in a-Si1-xGex:H Alloys for Multi-Junction Solar Cells

Defect Distributions in Doped and Undoped A-SiGe:H Alloys

The Interpretation of the Constant Photocurrent Method in Terms of Deep Defect Density of States in A-SI.H

Towards a better understanding of surfaces of hydrogenated amorphous silicon : investigation by STM and AFM

Correlation between structure and optoelectronic properties of undoped microcrystalline silicon

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