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Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments

Semiconductors (Woodbury, N.Y.), 2021-05, Vol.55 (5), p.461-465

2021

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The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

Technical physics letters, 2020-08, Vol.46 (8), p.741-744

2020

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HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316-320

2020

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A Megapixel Matrix Photodetector of the Middle Infrared Range

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1011-1015

2019

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Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1024-1029

2019

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CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1626-1629

2016

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HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Physica status solidi. C, 2016-07, Vol.13 (7-9), p.651-655

2016

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Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films

Materials research express, 2020-12, Vol.7 (12), p.125903

2020

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384x288 readout integrated circuit for MWIR and LWIR HgCdTe based FPA

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12055

2015

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Acceptor states in HgCdTe films grown by molecular-beam epitaxy on GaAs and Si substrates

Physica status solidi. C, 2016-07, Vol.13 (7-9), p.469-472

2016

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Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

Applied physics letters, 2022-08, Vol.121 (8)

2022

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Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature

Applied physics letters, 2020-02, Vol.116 (8)

2020

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Analysis of structural–technological limitations in silicon circuits for reading photodiode signals in the IR region

Journal of optical technology, 2014-07, Vol.81 (7), p.392

2014

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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Infrared physics & technology, 2020-03, Vol.105, p.103182, Article 103182

2020

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Concentration of vacancies in the metal sublattice of cadmium and mercury tellurides solid solutions depending on composition

Russian Journal of Physical Chemistry A, 2010-09, Vol.84 (9), p.1459-1466

2010

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Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al$_{\mathbf{2}}$$O$_{\mathbf{3}}$$ Grown by Atomic Layer Deposition

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.492-497

2020

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High-performance 320 × 256 long-wavelength infrared photodetector arrays based on CdHgTe layers grown by molecular beam epitaxy

Optoelectronics, instrumentation, and data processing, 2013, Vol.49 (5), p.485-491

2013

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Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages

Journal of communications technology & electronics, 2023-12, Vol.68 (Suppl 2), p.S132-S137

2023

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Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy

Journal of communications technology & electronics, 2023-09, Vol.68 (9), p.1036-1039

2023

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Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition

Optoelectronics, instrumentation, and data processing, 2020, Vol.56 (5), p.492-497

2020

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Experimental Study of NBνN Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors

Journal of communications technology & electronics, 2023-03, Vol.68 (3), p.334-337

2023

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Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

Optoelectronics, instrumentation, and data processing, 2020-09, Vol.56 (5), p.456-469

2020

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Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe

Journal of communications technology & electronics, 2022-03, Vol.67 (3), p.308-312

2022

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Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy

Semiconductor science and technology, 2008-09, Vol.23 (9), p.095001

2008

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Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range

Technical physics letters, 2021-09, Vol.47 (9), p.629-632

2021

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Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments

The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

A Megapixel Matrix Photodetector of the Middle Infrared Range

Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films

384x288 readout integrated circuit for MWIR and LWIR HgCdTe based FPA

Acceptor states in HgCdTe films grown by molecular-beam epitaxy on GaAs and Si substrates

Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature

Analysis of structural–technological limitations in silicon circuits for reading photodiode signals in the IR region

Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Concentration of vacancies in the metal sublattice of cadmium and mercury tellurides solid solutions depending on composition

Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al$_{\mathbf{2}}$$O$_{\mathbf{3}}$$ Grown by Atomic Layer Deposition

High-performance 320 × 256 long-wavelength infrared photodetector arrays based on CdHgTe layers grown by molecular beam epitaxy

Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages

Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy

Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition

Experimental Study of NBνN Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors

Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe

Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy

Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range

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