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Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy

CrystEngComm, 2018, Vol.2 (24), p.337-338

2018

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Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires

Semiconductors (Woodbury, N.Y.), 2022, Vol.56 (1), p.14-17

2022

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Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (16), p.2146-2148

2018

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Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si

Nanotechnology, 2019-09, Vol.30 (39), p.395602-395602

2019

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Wurtzite AlGaAs Nanowires

Scientific reports, 2020-01, Vol.10 (1), p.735-735, Article 735

2020

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Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface

Nanotechnology, 2020-03, Vol.31 (24), p.244003-244003

2020

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Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond

Nanotechnology, 2020-05, Vol.31 (29), p.294003-294003

2020

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Growth Kinetics of Planar Nanowires

Technical physics letters, 2020-10, Vol.46 (10), p.1008-1011

2020

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Free Energy of Nucleus Formation during Growth of III–V Semiconductor Nanowires

Technical physics letters, 2020-09, Vol.46 (9), p.889-892

2020

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Kinetics of Spontaneous Formation of Core-Shell Structure in (In,Ga)As Nanowires

Technical physics letters, 2024-02, Vol.50 (2), p.164-167

2024

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AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

Journal of physics. D, Applied physics, 2017-12, Vol.50 (48), p.484003

2017

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Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers

Semiconductors (Woodbury, N.Y.), 2024-05, Vol.58 (5), p.406-408

2024

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Hydrothermal zinc oxide nanostructures: geometry control and narrow band UV emission

Journal of physics. Conference series, 2022-03, Vol.2227 (1), p.12007

2022

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Origin of Spontaneous Core–Shell AlGaAs Nanowires Grown by Molecular Beam Epitaxy

Crystal growth & design, 2016-12, Vol.16 (12), p.7251-7255

2016

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On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties

Surface investigation, x-ray, synchrotron and neutron techniques, 2024-04, Vol.18 (2), p.408-412

2024

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Multiply GaAs quantum dots in AlGaAs nanowires: MBE growth and properties

Journal of physics. Conference series, 2020-12, Vol.1695 (1), p.12205

2020

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MBE-Grown InxGa1 –xAs Nanowires with 50% Composition

Semiconductors (Woodbury, N.Y.), 2020-06, Vol.54 (6), p.650-653

2020

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Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1141-1146

2020

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Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1529-1533

2018

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MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12036

2018

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Structal and Optical Properties Algaas Nanowires Grown by Mbe on Si(111) Substrate

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12062

2019

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Nonlinear Bleaching of InAs Nanowires in the Visible Range

Optics and spectroscopy, 2020, Vol.128 (1), p.125-130

2020

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Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.462-464

2018

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MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate

Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12063

2018

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The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate

Journal of physics. Conference series, 2017-11, Vol.929 (1), p.12047

2017

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Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy

Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires

Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si

Wurtzite AlGaAs Nanowires

Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface

Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond

Growth Kinetics of Planar Nanowires

Free Energy of Nucleus Formation during Growth of III–V Semiconductor Nanowires

Kinetics of Spontaneous Formation of Core-Shell Structure in (In,Ga)As Nanowires

AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers

Hydrothermal zinc oxide nanostructures: geometry control and narrow band UV emission

Origin of Spontaneous Core–Shell AlGaAs Nanowires Grown by Molecular Beam Epitaxy

On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties

Multiply GaAs quantum dots in AlGaAs nanowires: MBE growth and properties

MBE-Grown InxGa1 –xAs Nanowires with 50% Composition

Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate

Structal and Optical Properties Algaas Nanowires Grown by Mbe on Si(111) Substrate

Nonlinear Bleaching of InAs Nanowires in the Visible Range

Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate

The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate

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