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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Nanotechnology, 2024-04, Vol.35 (16), p.165203

2024

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Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Surface investigation, x-ray, synchrotron and neutron techniques, 2024-06, Vol.18 (3), p.586-593

2024

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Urbach absorption edge in epitaxial erbium-doped silicon

Journal of applied physics, 2015-02, Vol.117 (5)

2015

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Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1552-1556

2017

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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1485-1489

2017

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Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1475-1478

2016

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Auger de-excitation of different Er centers in Si:Er layers grown with sublimation molecular beam epitaxy

Semiconductor science and technology, 2012-10, Vol.27 (10), p.105028

2012

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Extremely sharp electroluminescence from Er-doped silicon

Semiconductor science and technology, 2009-06, Vol.24 (6), p.065009-065009 (3)

2009

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Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-12, Vol.105 (1), p.70-73

2003

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High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4593-4596

2009

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Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.769-772

2003

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Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Thin solid films, 2008-11, Vol.517 (1), p.398-400

2008

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Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1556-1560

2006

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Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-01, Vol.146 (1), p.256-259

2008

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A simple approach to the simulation of impact excitation of erbium in silicon light-emitting diodes

Semiconductor science and technology, 2006-10, Vol.21 (10), p.1459-1463

2006

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Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 2024-09 (5), p.61-68

2024

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Silicon epilayers grown by chemical vapor deposition from high-purity silane

Inorganic materials, 2006-08, Vol.42 (8), p.815-818

2006

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Hodographs in diode-structure diagnostics

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1443-1447

2015

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Absorption cross section for the 4 I 15/2 → 4 I 13/2 transition of Er3+ in Si:Er:O/SOI epitaxial layers

JETP letters, 2015-02, Vol.100 (12), p.807-811

2015

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Absorption cross section for the 4I15/2 → 4I13/2 transition of Er3+ in Si:Er:O/SOI epitaxial layers

JETP letters, 2015, Vol.100 (12), p.807-811

2015

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Study of IR absorption and photoconductivity spectra of thermal double donors in silicon

physica status solidi (b), 2003-01, Vol.235 (1), p.79-84

2003

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Specific features of the nonradiative relaxation of Er{sup 3+} ions in epitaxial Si structures

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12)

2014

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Specific features of the nonradiative relaxation of Er3+ ions in epitaxial Si structures

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1586-1591

2014

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Optical Er-doping of Si during sublimational molecular beam epitaxy

Journal of crystal growth, 1999-05, Vol.201, p.534-537

1999

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Features of impurity photoconductivity in Si:Er/Si epitaxial diodes

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1500-1503

2013

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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Urbach absorption edge in epitaxial erbium-doped silicon

Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations

Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Auger de-excitation of different Er centers in Si:Er layers grown with sublimation molecular beam epitaxy

Extremely sharp electroluminescence from Er-doped silicon

Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

High-resolution spectroscopy and time-resolved study of electroluminescence of Er-1 center in silicon

Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon

Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes

Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes

A simple approach to the simulation of impact excitation of erbium in silicon light-emitting diodes

Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Silicon epilayers grown by chemical vapor deposition from high-purity silane

Hodographs in diode-structure diagnostics

Absorption cross section for the 4 I 15/2 → 4 I 13/2 transition of Er3+ in Si:Er:O/SOI epitaxial layers

Absorption cross section for the 4I15/2 → 4I13/2 transition of Er3+ in Si:Er:O/SOI epitaxial layers

Study of IR absorption and photoconductivity spectra of thermal double donors in silicon

Specific features of the nonradiative relaxation of Er{sup 3+} ions in epitaxial Si structures

Specific features of the nonradiative relaxation of Er3+ ions in epitaxial Si structures

Optical Er-doping of Si during sublimational molecular beam epitaxy

Features of impurity photoconductivity in Si:Er/Si epitaxial diodes

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