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Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Thin solid films, 2016-08, Vol.613, p.24-28

2016

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Effects of bone mineral density of the lumbar spine and prevalent vertebral fractures on the risk of immobility

Osteoporosis international, 2010-09, Vol.21 (9), p.1545-1551

2010

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Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer

Thin solid films, 2014-04, Vol.557, p.76-79

2014

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Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

Thin solid films, 2013-05, Vol.534, p.470-473

2013

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Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates

Journal of crystal growth, 2014-09, Vol.401, p.758-761

2014

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Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures

Applied physics letters, 2012-05, Vol.100 (22), p.222102-222102-4

2012

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Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

Applied physics letters, 2006-11, Vol.89 (20), p.201102-201102-3

2006

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Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities

IEEE journal of selected topics in quantum electronics, 2012-11, Vol.18 (6), p.1830-1838

2012

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Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

Physical review. B, Condensed matter and materials physics, 2009-11, Vol.80 (20), Article 205206

2009

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Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

Applied physics letters, 2007-07, Vol.91 (1), p.011104-011104-3

2007

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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Journal of crystal growth, 2013-09, Vol.378, p.251-253

2013

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Silicon-Germanium (SiGe) Nanostructures - Production, Properties and Applications in Electronics

1, 2011

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Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

Applied physics letters, 2009-09, Vol.95 (12)

2009

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In-plane strain fluctuation in strained-Si/SiGe heterostructures

Applied physics letters, 2003-11, Vol.83 (21), p.4339-4341

2003

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Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

Applied physics letters, 2002-07, Vol.81 (5), p.847-849

2002

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Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Applied physics letters, 1995-05, Vol.66 (22), p.3024-3026

1995

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Compressive strain dependence of hole mobility in strained Ge channels

Applied physics letters, 2005-11, Vol.87 (19), p.192102-192102-3

2005

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Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Applied physics letters, 1992-08, Vol.61 (5), p.557-559

1992

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Observation of whispering-gallery modes in Si microdisks at room temperature

Applied physics letters, 2007-04, Vol.90 (14), p.141102-141102-3

2007

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Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

Applied physics letters, 1998-03, Vol.72 (13), p.1617-1619

1998

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AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

Journal of electron spectroscopy and related phenomena, 2013-10, Vol.190, p.295-301

2013

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Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

Applied physics letters, 1997-07, Vol.71 (2), p.258-260

1997

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Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates

Applied physics letters, 2004-09, Vol.85 (13), p.2514-2516

2004

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Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping

Applied physics letters, 2006-06, Vol.88 (25)

2006

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Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method

Journal of physics. Conference series, 2013-01, Vol.417 (1), p.12008-5

2013

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