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Contact and channel resistances of ballistic and non-ballistic carbon-nanotube field-effect transistors

Journal of the Korean Physical Society, 2016, 68(2), , pp.251-256

2016

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Benzotriazine Di-Oxide Prodrugs for Exploiting Hypoxia and Low Extracellular pH in Tumors

Molecules (Basel, Switzerland), 2019-07, Vol.24 (14), p.2524

2019

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Efficient compact model for calculating the surface potential of carbon-nanotube field-effect transistors using a curve-fitting method

Current Applied Physics, 2015, 15(8), , pp.938-942

2015

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Corrosion properties of plasma-sprayed Al2O3-TiO2 coatings on Ti metal

Journal of materials science, 2006-04, Vol.41 (7), p.2059-2065

2006

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Comparison of simulation models for the coaxially-gated carbon-nanotube field-effect transistor

Journal of the Korean Physical Society, 2012, 61(3), , pp.410-414

2012

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Investigation of the Ru-Zr Metal Alloy for Use as a Gate Electrode in NMOS Devices

Journal of the Korean Physical Society, 2010, 56(5), , pp.1497-1499

2010

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MOS Characteristics of Ta-Mo Alloy Electrodes on a ZrO2 Gate Dielectric

Journal of the Korean Physical Society, 2008, 53(2), , pp.709-712

2008

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Properties of Ta-Mo alloy gate electrode for n-MOSFET

Journal of materials science, 2005-05, Vol.40 (9-10), p.2693-2695

2005

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Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Journal of electronic materials, 2001-12, Vol.30 (12), p.1493-1498

2001

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Promising Gate Stacks with Ru & RuO2 Gate Electrodes and Y-silicate Dielectrics

MRS proceedings, 2001, Vol.670

2001

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Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.20.5.1-20.5.4

2001

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Material and electrical properties of ultra-shallow p+-n junctions formed by low-energy ion implantation and rapid thermal annealing

IEEE transactions on electron devices, 1991-03, Vol.38 (3), p.476-486

1991

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Characterization of ultra-shallow p+-n junction diodes fabricated by 500 eV boron-ion implantation

IEEE transactions on electron devices, 1991, Vol.38 (1), p.28-31

1991

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0.2-mu m p(+)-n junction characteristics dependent onimplantation and annealing processes

IEEE electron device letters, 1999-02, Vol.20 (2), p.83-85

Hong, Shin-Nam

1999

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0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes

IEEE electron device letters, 1999-02, Vol.20 (2), p.83-85

Shin-Nam Hong

1999

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0.2- mu m p super(+)-n junction characteristics dependent on implantation and annealing processes

IEEE electron device letters, 1999-01, Vol.20 (2)

Hong, Shin-Nam

1999

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Characteristics of Ta-Mo Alloy Metal Gate Electrode for Nano-Scale NMOSFET Application

Journal of the Korean Physical Society, 2004, 45(1), , pp.1009-1013

2004

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How Do Phytochromes Transmit the Light Quality Information to the Circadian Clock in Arabidopsis

Molecular plant, 2014-11, Vol.7 (11), p.1701-1704

2014

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Output Characteristics of Carbon-nanotube Field-effect Transistor Dependent on Nanotube Diameter and Oxide Thickness

Journal of the Korean Institute of Electrical and Electronic Material Engineers, 2013-02, Vol.26 (2), p.87-91

2013

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Electrical properties of Ru and RuO2 gate electcrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Journal of electronic materials, 2001-12, Vol.30 (12), p.1493

2001

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Electrical properties of Ru and RuO sub(2) gate electrodes for Si-PMOSFET with ZrO sub(2) and Zr-silicate dielectrics

Journal of electronic materials, 2001-12, Vol.30 (12), p.1493-1498

2001

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Characteristics of Shallow p+-n Junctions Formed by Low Energy Ion Implantation and Dual-Step Annealing Processes

Journal of the Korean Physical Society, 2004, 45(1), , pp.817-820

2004

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Effect of PVP Addition on Microstructure of SrZrO3 Thin Films on Bi(2223) Tapes

Materials science forum, 2005-06, Vol.486-487, p.570-573

2005

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Promising Gate Stacks with Ru & RuO 2 Gate Electrodes and Y-silicate Dielectrics

MRS proceedings, 2001, Vol.670, Article K3.1

2001

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Variation in Summer Surface Air Temperature over Northeast Asia and Its Associated Circulation Anomalies

Advances in atmospheric sciences, 2016, Vol.33 (1), p.1-9

2016

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Contact and channel resistances of ballistic and non-ballistic carbon-nanotube field-effect transistors

Benzotriazine Di-Oxide Prodrugs for Exploiting Hypoxia and Low Extracellular pH in Tumors

Efficient compact model for calculating the surface potential of carbon-nanotube field-effect transistors using a curve-fitting method

Corrosion properties of plasma-sprayed Al2O3-TiO2 coatings on Ti metal

Comparison of simulation models for the coaxially-gated carbon-nanotube field-effect transistor

Investigation of the Ru-Zr Metal Alloy for Use as a Gate Electrode in NMOS Devices

MOS Characteristics of Ta-Mo Alloy Electrodes on a ZrO2 Gate Dielectric

Properties of Ta-Mo alloy gate electrode for n-MOSFET

Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Promising Gate Stacks with Ru & RuO2 Gate Electrodes and Y-silicate Dielectrics

Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices

Material and electrical properties of ultra-shallow p+-n junctions formed by low-energy ion implantation and rapid thermal annealing

Characterization of ultra-shallow p+-n junction diodes fabricated by 500 eV boron-ion implantation

0.2-mu m p(+)-n junction characteristics dependent onimplantation and annealing processes

0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes

0.2- mu m p super(+)-n junction characteristics dependent on implantation and annealing processes

Characteristics of Ta-Mo Alloy Metal Gate Electrode for Nano-Scale NMOSFET Application

How Do Phytochromes Transmit the Light Quality Information to the Circadian Clock in Arabidopsis

Output Characteristics of Carbon-nanotube Field-effect Transistor Dependent on Nanotube Diameter and Oxide Thickness

Electrical properties of Ru and RuO2 gate electcrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics

Electrical properties of Ru and RuO sub(2) gate electrodes for Si-PMOSFET with ZrO sub(2) and Zr-silicate dielectrics

Characteristics of Shallow p+-n Junctions Formed by Low Energy Ion Implantation and Dual-Step Annealing Processes

Effect of PVP Addition on Microstructure of SrZrO3 Thin Films on Bi(2223) Tapes

Promising Gate Stacks with Ru & RuO 2 Gate Electrodes and Y-silicate Dielectrics

Variation in Summer Surface Air Temperature over Northeast Asia and Its Associated Circulation Anomalies

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