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Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13), p.n/a

2024

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A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Scientific reports, 2021-11, Vol.11 (1), p.22401-22401, Article 22401

2021

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Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

Materials, 2022-11, Vol.15 (23), p.8415

2022

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Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Materials, 2023-09, Vol.16 (18), p.6138

2023

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Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Scientific reports, 2021-12, Vol.11 (1), p.23667-23667, Article 23667

2021

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Primary well differentiated hepatic liposarcoma in a meerkat (Suricata suricatta)

Journal of Veterinary Medical Science, 2023, Vol.85(6), pp.609-612

2023

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Symmetric Dimethylarginine is a Promising Biomarker for the Early Detection of Age-Related Kidney Dysfunction in Zoo Felids

Acta veterinaria (Beograd), 2022-09, Vol.72 (3), p.408-418

2022

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Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.2988-2993

2023

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Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression

Solid-state electronics, 2023-12, Vol.210, p.108788, Article 108788

2023

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Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions

Materials, 2020-12, Vol.13 (24), p.5809

2020

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Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

Solid-state electronics, 2022-11, Vol.197, Article 108447

2022

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Bcl-2 and p53 Expressions in Invasive Bladder Cancers

Acta oncologica, 1998, Vol.37 (7-8), p.715-720

Gu Kong, Ki Yong Shin, Young Ha Oh, Jong Jin Lee, Hae Young Park, Young Nam Woo, Jung Dal Lee

1998

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An Explicit Thermal Resistance Model Regarding Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistor

Materials science forum, 2022-11, Vol.1074, p.125-131

2022

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Characterization of Electrical Traps Formed in Al 2 O 3 under Various ALD Conditions

Materials, 2020-12, Vol.13 (24)

2020

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Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in Al x Ga 1− x N/GaN High Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13)

2024

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Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O } Plasma Treatment

IEEE transactions on electron devices, 2023-05, p.1-6

2023

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IEEE_Xplore

Investigation of symmetric dimethylarginine as a serologic marker for kidney function in striped skunks ( Mephitis mephitis )

Journal of veterinary science (Suwŏn-si, Korea), 2024-07, Vol.25 (4), p.e52

2024

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Role of early endourologic management of tuberculous ureteral strictures

Journal of endourology, 2002-12, Vol.16 (10), p.755-758

2002

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Trap Behavior of Metamorphic HEMTs with Pulsed IV and 1/f Noise Measurement

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.324-327

2022

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Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

Solid-state electronics, 2022-11, Vol.197, p.108447, Article 108447

2022

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Author Correction: A quantitative approach for trap analysis between Al 0.25 Ga 0.75 N and GaN in high electron mobility transistors

Scientific reports, 2021-12, Vol.11 (1), p.23667

2021

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A quantitative approach for trap analysis between Al 0.25 Ga 0.75 N and GaN in high electron mobility transistors

Scientific reports, 2021-11, Vol.11 (1), p.22401

2021

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Effects of tumor necrosis factor-α and interferon-γ on expressions of matrix metalloproteinase-2 and -9 in human bladder cancer cells

Cancer letters, 2000-10, Vol.159 (2), p.127-134

2000

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Reduction of the trans fatty acid absorption in Caco‐2 cell by grain extracts

The FASEB journal, 2009-04, Vol.23 (S1)

2009

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Recombinant RNA polymerase: inducible overexpression, purification and assembly of Escherichia coli rpo gene products

Gene, 1990-04, Vol.89 (1), p.7-12

1990

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Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs

Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Primary well differentiated hepatic liposarcoma in a meerkat (Suricata suricatta)

Symmetric Dimethylarginine is a Promising Biomarker for the Early Detection of Age-Related Kidney Dysfunction in Zoo Felids

Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression

Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions

Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

Bcl-2 and p53 Expressions in Invasive Bladder Cancers

An Explicit Thermal Resistance Model Regarding Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistor

Characterization of Electrical Traps Formed in Al 2 O 3 under Various ALD Conditions

Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in Al x Ga 1− x N/GaN High Electron Mobility Transistors

Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O } Plasma Treatment

Investigation of symmetric dimethylarginine as a serologic marker for kidney function in striped skunks ( Mephitis mephitis )

Role of early endourologic management of tuberculous ureteral strictures

Trap Behavior of Metamorphic HEMTs with Pulsed IV and 1/f Noise Measurement

Vertical homo-junction In Ga As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

Author Correction: A quantitative approach for trap analysis between Al 0.25 Ga 0.75 N and GaN in high electron mobility transistors

A quantitative approach for trap analysis between Al 0.25 Ga 0.75 N and GaN in high electron mobility transistors

Effects of tumor necrosis factor-α and interferon-γ on expressions of matrix metalloproteinase-2 and -9 in human bladder cancer cells

Reduction of the trans fatty acid absorption in Caco‐2 cell by grain extracts

Recombinant RNA polymerase: inducible overexpression, purification and assembly of Escherichia coli rpo gene products

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