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Minority carrier lifetime in p-HgCdTe

Journal of electronic materials, 2005-06, Vol.34 (6), p.880-884

2005

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High-Operating-Temperature MWIR Detector Diodes

Journal of electronic materials, 2008-09, Vol.37 (9), p.1401-1405

2008

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Increased Susceptibility of Rice Following Insertion of Amylopullulanase Gene, to Brown Spot Caused by Bipolaris oryzae

Journal of phytopathology, 2008-09, Vol.156 (9), p.530-533

2008

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Arsenic-doped mid-wavelength infrared HgCdTe photodiodes

Journal of electronic materials, 2004-06, Vol.33 (6), p.590-595

2004

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Noise Attributes of LWIR HDVIP HgCdTe Detectors

Journal of electronic materials, 2008-09, Vol.37 (9), p.1318-1323

2008

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Growth of very low arsenic-doped HgCdTe

Journal of electronic materials, 2005-06, Vol.34 (6), p.963-967

2005

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Novel MYC-driven medulloblastoma models from multiple embryonic cerebellar cells

Oncogene, 2017-09, Vol.36 (37), p.5231-5242

2017

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Deactivation of arsenic as an acceptor by ion implantation and reactivation by low-temperature anneal

Journal of electronic materials, 2005-06, Vol.34 (6), p.864-867

2005

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p to n conversion in SWIR mercury cadmium telluride with ion milling

Journal of electronic materials, 2006-06, Vol.35 (6), p.1470-1473

2006

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HgCdTe on Si: Present status and novel buffer layer concepts

Journal of electronic materials, 2003-08, Vol.32 (8), p.882-889

2003

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Activation of arsenic as an acceptor in Hg1-xCdxTe under equilibrium conditions

Journal of electronic materials, 2002-07, Vol.31 (7), p.715-719

2002

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Development of molecular beam epitaxially grown Hg1-xCdxTe for high-density vertically-integrated photodiode-based focal plane arrays

Journal of electronic materials, 2007, Vol.36 (8), p.900-904

2007

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Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B

Journal of electronic materials, 2001-06, Vol.30 (6), p.794-796

2001

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Spectral Response Model for Front-Side-Illuminated Detectors

Journal of electronic materials, 2009-08, Vol.38 (8), p.1624-1627

2009

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Formation and control of defects during molecular beam epitaxial growth of HgCdTe

Journal of electronic materials, 1998-06, Vol.27 (6), p.640-647

1998

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Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxy

Applied physics letters, 1986-01, Vol.48 (1), p.47-49

1986

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Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

Journal of electronic materials, 2000-06, Vol.29 (6), p.727-728

2000

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Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors

Applied physics letters, 2003-06, Vol.82 (23), p.4157-4159

2003

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Bluetooth technology: an exploratory study of the analysis and implementation frameworks

Computer standards and interfaces, 2004-08, Vol.26 (4), p.263-277

2004

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A new reverse auction agent system for m-commerce using mobile agents

Computer standards and interfaces, 2005-04, Vol.27 (4), p.383-395

2005

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Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy

Applied physics letters, 2001-05, Vol.78 (22), p.3481-3483

2001

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Localization in one-dimensional random superlattices

Journal of applied physics, 1992-09, Vol.72 (5, Se), p.2080-2082

1992

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Spectroscopic ellipsometry for monitoring and control of molecular beam epitaxially grown HgCdTe heterostructures

Journal of electronic materials, 1997-06, Vol.26 (6), p.502-506

1997

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Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe

Journal of electronic materials, 1999-06, Vol.28 (6), p.756-759

1999

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Preparation of ZnSe light-emitting diodes by metalorganic chemical vapor deposition using trisdimethylaminoarsine as a p-type doping source

Journal of electronic materials, 1998-06, Vol.27 (6), p.769-771

1998

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Minority carrier lifetime in p-HgCdTe

High-Operating-Temperature MWIR Detector Diodes

Increased Susceptibility of Rice Following Insertion of Amylopullulanase Gene, to Brown Spot Caused by Bipolaris oryzae

Arsenic-doped mid-wavelength infrared HgCdTe photodiodes

Noise Attributes of LWIR HDVIP HgCdTe Detectors

Growth of very low arsenic-doped HgCdTe

Novel MYC-driven medulloblastoma models from multiple embryonic cerebellar cells

Deactivation of arsenic as an acceptor by ion implantation and reactivation by low-temperature anneal

p to n conversion in SWIR mercury cadmium telluride with ion milling

HgCdTe on Si: Present status and novel buffer layer concepts

Activation of arsenic as an acceptor in Hg1-xCdxTe under equilibrium conditions

Development of molecular beam epitaxially grown Hg1-xCdxTe for high-density vertically-integrated photodiode-based focal plane arrays

Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B

Spectral Response Model for Front-Side-Illuminated Detectors

Formation and control of defects during molecular beam epitaxial growth of HgCdTe

Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxy

Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors

Bluetooth technology: an exploratory study of the analysis and implementation frameworks

A new reverse auction agent system for m-commerce using mobile agents

Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy

Localization in one-dimensional random superlattices

Spectroscopic ellipsometry for monitoring and control of molecular beam epitaxially grown HgCdTe heterostructures

Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe

Preparation of ZnSe light-emitting diodes by metalorganic chemical vapor deposition using trisdimethylaminoarsine as a p-type doping source

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