UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics

Applied physics letters, 2017-11, Vol.111 (21)

2017

Volltextzugriff (PDF)

High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures

IEEE electron device letters, 2008-02, Vol.29 (2), p.158-160

2008

Volltextzugriff (PDF)

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

IEEE photonics technology letters, 2003-01, Vol.15 (1), p.18-20

2003

Volltextzugriff (PDF)

The doping process and dopant characteristics of GaN

Journal of physics. Condensed matter, 2002-06, Vol.14 (22), p.R657-R702, Article 201

2002

Volltextzugriff (PDF)

GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication

IEEE photonics journal, 2012-10, Vol.4 (5), p.1520-1529

2012

Volltextzugriff (PDF)

High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer

Optics express, 2011-06, Vol.19 (13), p.12658-12663

2011

Volltextzugriff (PDF)

Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire

IEEE photonics technology letters, 2011-07, Vol.23 (14), p.968-970

2011

Volltextzugriff (PDF)

Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique

IEEE photonics technology letters, 2011-11, Vol.23 (21), p.1585-1587

2011

Volltextzugriff (PDF)

Very-High Temperature (200 ^C) and High-Speed Operation of Cascade GaN-Based Green Light- Emitting Diodes With an InGaN Insertion Layer

IEEE photonics technology letters, 2010-07, Vol.22 (14), p.1033-1035

2010

Volltextzugriff (PDF)

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.744-748

2002

Volltextzugriff (PDF)

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

IEEE photonics technology letters, 2008-07, Vol.20 (13), p.1142-1144

2008

Volltextzugriff (PDF)

The improvement in modulation speed of GaN-based Green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

IEEE photonics technology letters, 2006-08, Vol.18 (15), p.1636-1638

2006

Volltextzugriff (PDF)

Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

IEEE electron device letters, 2005-07, Vol.26 (7), p.464-466

2005

Volltextzugriff (PDF)

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

IEEE photonics technology letters, 2001-08, Vol.13 (8), p.848-850

2001

Volltextzugriff (PDF)

Linear Cascade Arrays of GaN-Based Green Light-Emitting Diodes for High-Speed and High-Power Performance

IEEE photonics technology letters, 2007-09, Vol.19 (18), p.1368-1370

2007

Volltextzugriff (PDF)

Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Journal of crystal growth, 2004-02, Vol.261 (4), p.466-470

2004

Volltextzugriff (PDF)

Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

IEEE electron device letters, 2011-10, Vol.32 (10), p.1400-1402

2011

Volltextzugriff (PDF)

Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light

IEEE photonics technology letters, 2006-12, Vol.18 (24), p.2593-2595

2006

Volltextzugriff (PDF)

High-transparency Ni/Au ohmic contact to p -type GaN

Applied physics letters, 1999-04, Vol.74 (16), p.2340-2342

1999

Volltextzugriff (PDF)

Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions

IEEE photonics technology letters, 2008-03, Vol.20 (6), p.449-451

2008

Volltextzugriff (PDF)

Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes

Applied physics letters, 2005-01, Vol.86 (5), p.052103-052103-3

2005

Volltextzugriff (PDF)

Effects of Thermal Annealing on Al-Doped ZnO Films Deposited on p-Type Gallium Nitride

Journal of the Electrochemical Society, 2006-01, Vol.153 (4), p.G296

2006

Volltextzugriff (PDF)

Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer

IEEE electron device letters, 2004-09, Vol.25 (9), p.593-595

2004

Volltextzugriff (PDF)

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

IEEE electron device letters, 2003-04, Vol.24 (4), p.212-214

2003

Volltextzugriff (PDF)

Improved Light Extraction Efficiency in AlGaInP Light-Emitting Diodes by Applying a Periodic Texture on the Surface

IEEE photonics technology letters, 2008-10, Vol.20 (20), p.1724-1726

2008

Volltextzugriff (PDF)

1 – 25 von 982

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(805)
Mit Volltextzugriff
(820)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(704)
Life Sciences & Biomedicine
(376)
Humans
(290)
Physical Sciences
(245)
Biological And Medical Sciences
(226)
Technology
(203)
Male
(195)
Female
(174)
Physics
(171)
Medical Sciences
(160)
Engineering
(151)
Engineering, Electrical & Electronic
(134)
Animals
(131)
Physics, Applied
(129)
Adult
(93)
Middle Aged
(83)
Exact Sciences And Technology
(78)
Aged
(73)
Neurosciences & Neurology
(64)
Fundamental And Applied Biological Sciences. Psychology
(60)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics

High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

The doping process and dopant characteristics of GaN

GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication

High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer

Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire

Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique

Very-High Temperature (200 ^C) and High-Speed Operation of Cascade GaN-Based Green Light- Emitting Diodes With an InGaN Insertion Layer

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The improvement in modulation speed of GaN-based Green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

Linear Cascade Arrays of GaN-Based Green Light-Emitting Diodes for High-Speed and High-Power Performance

Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light

High-transparency Ni/Au ohmic contact to p -type GaN

Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions

Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes

Effects of Thermal Annealing on Al-Doped ZnO Films Deposited on p-Type Gallium Nitride

Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

Improved Light Extraction Efficiency in AlGaInP Light-Emitting Diodes by Applying a Periodic Texture on the Surface

Suchergebnisse filtern