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Implantation of muscle satellite cells overexpressing myogenin improves denervated muscle atrophy in rats

Brazilian journal of medical and biological research, 2016-01, Vol.49 (2), p.e5124-e5124

2016

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Surface step morphologies of GaN films grown on vicinal sapphire (0 0 0 1) substrates by rf-MBE

Journal of crystal growth, 2007-03, Vol.300 (1), p.75-78

2007

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Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0 0 0 1) vicinal substrates

Journal of crystal growth, 2007-04, Vol.301, p.452-456

2007

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The dimerization interfaces formed between the DNA binding domains of RXR, RAR and TR determine the binding specificity and polarity of the full‐length receptors to direct repeats

The EMBO journal, 1994-03, Vol.13 (6), p.1425-1433

1994

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Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0 0 0 1) substrates by RF-MBE

Journal of crystal growth, 2005-05, Vol.278 (1), p.378-382

2005

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Dimerization interfaces formed between the DNA binding domains determine the cooperative binding of RXR/RAR and RXR/TR heterodimers to DR5 and DR4 elements

The EMBO journal, 1994-03, Vol.13 (6), p.1414-1424

1994

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Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2002-11, Vol.245 (1), p.15-20

2002

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Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2000-09, Vol.218 (2), p.155-160

2000

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Gene expressions levels of 14-3-3a, NKCCla, APO-14, and Na+-K+-ATPaseβ in gill tissue of Mugil cephalus acclimated to low salinity

Genetics and molecular research, 2017-02, Vol.16 (1)

2017

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Growth and characterizations of InGaN on N- and Ga-polarity GaN grown by plasma-assisted molecular-beam epitaxy

Journal of crystal growth, 2002-04, Vol.237, p.1148-1152

2002

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Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

Journal of crystal growth, 2001-07, Vol.227, p.471-475

2001

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Surface diffusion length of cation incorporation studied by microprobe-RHEED/SEM MBE

Journal of crystal growth, 1996-05, Vol.163 (1), p.60-66

1996

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Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Physica status solidi. B. Basic research, 2001-11, Vol.228 (2), p.599-602

2001

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Resharpening effect of AlAs and fabrication of quantum-wires on V-grooved substrates by molecular beam epitaxy

Journal of crystal growth, 1993-02, Vol.127 (1), p.932-936

1993

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Inter-surface diffusion of In on (111)A-(001) InAs nonplanar substrates in molecular beam epitaxy

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.374-378

1995

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Surface diffusion and adatom stoichiometry in GaAs MBE studied by microprobe-RHEED/SEM MBE

Applied surface science, 1994-12, Vol.82 (1-4), p.141-148

1994

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Modeling cohesive energy and melting temperature of nanocrystals

The Journal of physics and chemistry of solids, 2006-04, Vol.67 (4), p.851-855

2006

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Molecular beam epitaxial growth of GAAs, AlAs and Al0.45Ga0.55As on (111)-A-(001) V-grooved substrates

Journal of crystal growth, 1994, Vol.135 (1-2), p.85-96

1994

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Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers

Journal of crystal growth, 2007-03, Vol.300 (1), p.168-171

2007

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Real-time observations of faceting and shrinkage processes of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(111)B substrates

Journal of crystal growth, 1996-12, Vol.169 (4), p.607-612

1996

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Initial growth behaviors of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(111)B substrates

Journal of crystal growth, 1997-06, Vol.177 (3), p.175-180

1997

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Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBE

Journal of crystal growth, 2007-04, Vol.301, p.404-409

2007

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Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Journal of crystal growth, 2009-03, Vol.311 (7), p.2049-2053

2009

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Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Physica status solidi. A, Applied research, 2001-12, Vol.188 (2), p.705-709

2001

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Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0 0 0 1) substrates grown by MOCVD

Journal of crystal growth, 2009-05, Vol.311 (10), p.2853-2856

2009

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Implantation of muscle satellite cells overexpressing myogenin improves denervated muscle atrophy in rats

Surface step morphologies of GaN films grown on vicinal sapphire (0 0 0 1) substrates by rf-MBE

Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0 0 0 1) vicinal substrates

The dimerization interfaces formed between the DNA binding domains of RXR, RAR and TR determine the binding specificity and polarity of the full‐length receptors to direct repeats

Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0 0 0 1) substrates by RF-MBE

Dimerization interfaces formed between the DNA binding domains determine the cooperative binding of RXR/RAR and RXR/TR heterodimers to DR5 and DR4 elements

Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy

Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy

Gene expressions levels of 14-3-3a, NKCCla, APO-14, and Na+-K+-ATPaseβ in gill tissue of Mugil cephalus acclimated to low salinity

Growth and characterizations of InGaN on N- and Ga-polarity GaN grown by plasma-assisted molecular-beam epitaxy

Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

Surface diffusion length of cation incorporation studied by microprobe-RHEED/SEM MBE

Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Resharpening effect of AlAs and fabrication of quantum-wires on V-grooved substrates by molecular beam epitaxy

Inter-surface diffusion of In on (111)A-(001) InAs nonplanar substrates in molecular beam epitaxy

Surface diffusion and adatom stoichiometry in GaAs MBE studied by microprobe-RHEED/SEM MBE

Modeling cohesive energy and melting temperature of nanocrystals

Molecular beam epitaxial growth of GAAs, AlAs and Al0.45Ga0.55As on (111)-A-(001) V-grooved substrates

Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers

Real-time observations of faceting and shrinkage processes of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(111)B substrates

Initial growth behaviors of disk-shaped mesas in GaAs molecular beam epitaxy on GaAs(111)B substrates

Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBE

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0 0 0 1) substrates grown by MOCVD

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