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The Impact of Total Ionizing Dose on Unhardened SRAM Cell Margins

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3280-3287

2008

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Theory of H- in SiO2

Journal of non-crystalline solids, 2001-08, Vol.289 (1-3), p.42-52

2001

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Electronic structure theory and mechanisms of the oxide trapped hole annealing process

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2316-2321

2000

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Radiation sensitivity reduction in deuterium annealed Si–SiO2 structures

Applied physics letters, 2002-01, Vol.80 (2), p.213-215

2002

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Improvement of radiation hardness in fully-depleted SOI n-MOSFETs using Ge-implantation

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.2291-2296

1994

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Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films

IEEE transactions on nuclear science, 1986-12, Vol.33 (6), p.1372-1376

1986

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Transient Radiation Effects on Silicon MESFET Integrated Circuits

IEEE transactions on nuclear science, 1983-01, Vol.30 (6), p.4183-4186

1983

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Short Pulse Transient Radiation Effects on a 92 K-Bit Magnetic Bubble Memory System

IEEE transactions on nuclear science, 1979-12, Vol.26 (6), p.4847-4850

1979

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The effect of network topology on proton trapping in amorphous SiO 2

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2081-2085

2001

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The effect of network topology on proton trapping in amorphous SiO2

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2081-2085

2001

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Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO(2)

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2311-2315

2000

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Interaction of H+/H0 with O atoms in thin SiO2 films : a first-principles quantum mechanical study

Journal of non-crystalline solids, 1999, Vol.254 (1-3), p.66-73

1999

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New fundamental defects in a-SiO(2)

IEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.1544-1552

1999

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The effect of near-interface network strain on proton trapping in SiO(2)

IEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.1562-1567

1999

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Memory switching in polycrystalline silicon films

Thin solid films, 1980-03, Vol.66 (2), p.171-176

1980

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Basics mechanisms for enhanced prompt charge collection in a n+p junction following single charged particle interaction

Journal of applied physics, 1998-09, Vol.84 (5), p.2690-2696

1998

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SOS Device radiation effects and hardening

IEEE transactions on electron devices, 1978-08, Vol.25 (8), p.959-970

1978

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Radiation Hardness of a Silicon MESFET 4K x 1 sRAM

IEEE transactions on nuclear science, 1984-01, Vol.31 (6), p.1483-1486

1984

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Radiation Effects on Silicon MESFET Devices and Circuits

IEEE transactions on nuclear science, 1981-01, Vol.28 (6), p.4376-4379

1981

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Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO2

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2311-2315

2000

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The effect of network topology on proton trapping in amorphous SiO sub(2)

IEEE transactions on nuclear science, 2001-01, Vol.48 (6)

2001

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Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO sub(2)

IEEE transactions on nuclear science, 2000-01, Vol.47 (6)

2000

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Silicon-on-Insulator Technologies,--are We Converging on a Technique of Choice?

IEEE transactions on nuclear science, 1986, Vol.33 (6), p.1365-1371

1986

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New fundamental defects in a-SiO sub(2)

IEEE transactions on nuclear science, 1999-01, Vol.46 (6)

1999

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The effect of near-interface network strain on proton trapping in SiO sub(2)

IEEE transactions on nuclear science, 1999-01, Vol.46 (6)

1999

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The Impact of Total Ionizing Dose on Unhardened SRAM Cell Margins

Theory of H- in SiO2

Electronic structure theory and mechanisms of the oxide trapped hole annealing process

Radiation sensitivity reduction in deuterium annealed Si–SiO2 structures

Improvement of radiation hardness in fully-depleted SOI n-MOSFETs using Ge-implantation

Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films

Transient Radiation Effects on Silicon MESFET Integrated Circuits

Short Pulse Transient Radiation Effects on a 92 K-Bit Magnetic Bubble Memory System

The effect of network topology on proton trapping in amorphous SiO 2

The effect of network topology on proton trapping in amorphous SiO2

Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO(2)

Interaction of H+/H0 with O atoms in thin SiO2 films : a first-principles quantum mechanical study

New fundamental defects in a-SiO(2)

The effect of near-interface network strain on proton trapping in SiO(2)

Memory switching in polycrystalline silicon films

Basics mechanisms for enhanced prompt charge collection in a n+p junction following single charged particle interaction

SOS Device radiation effects and hardening

Radiation Hardness of a Silicon MESFET 4K x 1 sRAM

Radiation Effects on Silicon MESFET Devices and Circuits

Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO2

The effect of network topology on proton trapping in amorphous SiO sub(2)

Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO sub(2)

Silicon-on-Insulator Technologies,--are We Converging on a Technique of Choice?

New fundamental defects in a-SiO sub(2)

The effect of near-interface network strain on proton trapping in SiO sub(2)

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