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Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

IEEE electron device letters, 1996-04, Vol.17 (4), p.160-162

1996

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The Reduction of the Dependence of Leakage Current on Gate Bias in Metal-Induced Laterally Crystallized p-Channel Polycrystalline-Silicon Thin-Film Transistors by Electrical Stressing

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2546-2550

2007

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Characterization of Lateral Structure of the p–i–n Diode for Thin-Film Silicon Solar Cell

Journal of nanoscience and nanotechnology, 2018-03, Vol.18 (3), p.1648-1656

2018

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Calendering effect on the electrochemical performances of the thick Li-ion battery electrodes using a three dimensional Ni alloy foam current collector

Electrochimica acta, 2015-07, Vol.170, p.263-268

2015

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High-performance and room-temperature-processed nanofloating gate memory devices based on top-gate transparent thin-film transistors

Applied physics letters, 2011-05, Vol.98 (21), p.212102-212102-3

2011

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Amorphous silicon thin-film negative electrode prepared by low pressure chemical vapor deposition for lithium-ion batteries

Solid state communications, 2003-02, Vol.125 (7), p.387-390

2003

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Analysis of grain-boundary effects on the electrical properties of Pb(Zr,Ti)O3 thin films

Applied physics letters, 2002-09, Vol.81 (14), p.2602-2604

2002

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Ultra-thick Li-ion battery electrodes using different cell size of metal foam current collectors

RSC advances, 2015-01, Vol.5 (22), p.1672-1676

2015

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Effect of Lightly Doped Drain Structure on P-Channel Metal Induced Lateral Crystallization Thin Film Transistors

Journal of nanoscience and nanotechnology, 2012-04, Vol.12 (4), p.3195-3199

2012

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The Electrical Properties of Unidirectional Metal-Induced Lateral Crystallized Polycrystalline-Silicon Thin-Film Transistors

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1420-1424

2007

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A metal foam as a current collector for high power and high capacity lithium iron phosphate batteries

Journal of materials chemistry. A, Materials for energy and sustainability, 2014-01, Vol.2 (46), p.19648-19652

2014

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Crystallization characteristics in heavily B2H6-doped amorphous Si thin films

Journal of alloys and compounds, 2019-09, Vol.801, p.352-359

2019

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Novel Offset-Gated Bottom Gate Poly-Si TFTs With a Combination Structure of Ultrathin Channel and Raised Source/Drain

IEEE electron device letters, 2008-03, Vol.29 (3), p.232-234

2008

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Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High- \kappa ZrTiO4 Gate Dielectric Featuring Low Equivalent-Oxide-Thickness

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2391-2397

2016

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Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

Applied physics letters, 2009-03, Vol.94 (12)

2009

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A Method for Fabricating Practically Channel-Corner-Free Polycrystalline Silicon Thin-Film Transistors

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.271-275

2011

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High Performance of Self-Aligned Transparent Polysilicon-Gate Thin-Film Transistors by NiSi2 Seed-Induced Lateral Crystallization

IEEE electron device letters, 2015-02, Vol.36 (2), p.147-149

2015

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High-Performance Poly-Si Thin-Film Transistor With High- k ZrTiO4 Gate Dielectric

IEEE electron device letters, 2015-09, Vol.36 (9), p.920-922

2015

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Pd induced lateral crystallization of amorphous Si thin films

Applied physics letters, 1995-03, Vol.66 (13), p.1671-1673

1995

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Electric-Field Enhanced Ni Induced Lateral Crystallization Rate Saturation in Heavily Phosphorus-Doped Amorphous Silicon

Crystal growth & design, 2016-01, Vol.16 (1), p.249-254

2016

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Direct/Indirect Junction Between Channel Inversion Layer and Doped Source/Drain Region on Metal-Induced Lateral Crystallization Polycrystalline Silicon Bottom Gate TFTs

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.432-437

2017

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Novel Fabrication of Lightly Doped-Drain for Suppressing the Leakage Current in Polycrystalline Silicon Thin-Film Transistor

Journal of nanoscience and nanotechnology, 2017-05, Vol.17 (5), p.3465-3468

2017

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Effect of Adjacent Metal and Dopant on Pd-Metal Induced Lateral Crystallization

Journal of the Electrochemical Society, 2006, Vol.153 (2), p.H19

2006

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Effect of electric field on amorphous silicon thin films during Ni induced lateral crystallization

Journal of applied physics, 2013-06, Vol.113 (22)

2013

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Advanced Four-Mask Process Bottom-Gate Poly-Si TFT via Self-Aligned NiSi2 Seed-Induced Lateral Crystallization

IEEE electron device letters, 2016-10, Vol.37 (10), p.1292-1294

2016

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Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

The Reduction of the Dependence of Leakage Current on Gate Bias in Metal-Induced Laterally Crystallized p-Channel Polycrystalline-Silicon Thin-Film Transistors by Electrical Stressing

Characterization of Lateral Structure of the p–i–n Diode for Thin-Film Silicon Solar Cell

Calendering effect on the electrochemical performances of the thick Li-ion battery electrodes using a three dimensional Ni alloy foam current collector

High-performance and room-temperature-processed nanofloating gate memory devices based on top-gate transparent thin-film transistors

Amorphous silicon thin-film negative electrode prepared by low pressure chemical vapor deposition for lithium-ion batteries

Analysis of grain-boundary effects on the electrical properties of Pb(Zr,Ti)O3 thin films

Ultra-thick Li-ion battery electrodes using different cell size of metal foam current collectors

Effect of Lightly Doped Drain Structure on P-Channel Metal Induced Lateral Crystallization Thin Film Transistors

The Electrical Properties of Unidirectional Metal-Induced Lateral Crystallized Polycrystalline-Silicon Thin-Film Transistors

A metal foam as a current collector for high power and high capacity lithium iron phosphate batteries

Crystallization characteristics in heavily B2H6-doped amorphous Si thin films

Novel Offset-Gated Bottom Gate Poly-Si TFTs With a Combination Structure of Ultrathin Channel and Raised Source/Drain

Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High- \kappa ZrTiO4 Gate Dielectric Featuring Low Equivalent-Oxide-Thickness

Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

A Method for Fabricating Practically Channel-Corner-Free Polycrystalline Silicon Thin-Film Transistors

High Performance of Self-Aligned Transparent Polysilicon-Gate Thin-Film Transistors by NiSi2 Seed-Induced Lateral Crystallization

High-Performance Poly-Si Thin-Film Transistor With High- k ZrTiO4 Gate Dielectric

Pd induced lateral crystallization of amorphous Si thin films

Electric-Field Enhanced Ni Induced Lateral Crystallization Rate Saturation in Heavily Phosphorus-Doped Amorphous Silicon

Direct/Indirect Junction Between Channel Inversion Layer and Doped Source/Drain Region on Metal-Induced Lateral Crystallization Polycrystalline Silicon Bottom Gate TFTs

Novel Fabrication of Lightly Doped-Drain for Suppressing the Leakage Current in Polycrystalline Silicon Thin-Film Transistor

Effect of Adjacent Metal and Dopant on Pd-Metal Induced Lateral Crystallization

Effect of electric field on amorphous silicon thin films during Ni induced lateral crystallization

Advanced Four-Mask Process Bottom-Gate Poly-Si TFT via Self-Aligned NiSi2 Seed-Induced Lateral Crystallization

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