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Molar Characteristics of Exploratory and Investigatory Behavior in the Rat (Rattus norvegicus )

Journal of comparative psychology (1983), 1991-12, Vol.105 (4), p.326-339

1991

Volltextzugriff (PDF)

The "gain-lever" effect in InGaAsP/InP multiple quantum well lasers

Journal of lightwave technology, 1995-02, Vol.13 (2), p.283-289

1995

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Reduced intermodulation-free dynamic range in gain-lever lasers

Electronics letters, 1993-03, Vol.29 (5), p.488-489

1993

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Carrier heating in InGaAsP laser amplifiers due to two-photon absorption

Applied physics letters, 1994-04, Vol.64 (17), p.2206-2208

1994

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Zero-net-strain and conventionally strained InGaAsP/InP multiquantum well lasers

Electronics letters, 1992-01, Vol.28 (1), p.63-65

1992

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Demonstration of an integrated multichannel grating cavity laser for WDM applications

Electronics letters, 1994-09, Vol.30 (20), p.1674-1675

1994

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242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity

Electronics letters, 1990, Vol.26 (4), p.267-269

1990

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A study of 0.98 mu m lasers with Ga0.50In0.50P confining layers

Semiconductor science and technology, 1994-06, Vol.9 (6), p.1198-1203

1994

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Low threshold current, high output power buried heterostructure MQW lasers with strained InGaAsP wells

Electronics letters, 1992-01, Vol.28 (19), p.1819-1821

1992

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Improved signal-to-noise ratio in gain-levered InGaAs/InP MQW lasers

Electronics letters, 1993, Vol.29 (2), p.230-231, Article 230-231

1993

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1.6 μm semiconductor diode pumped thulium doped fluoride fibre laser and amplifier of very high efficiency

Electronics letters, 1993-01, Vol.29 (24), p.2110-2112

1993

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Zero-net-strain multiquantum well lasers

Electronics letters, 1991-07, Vol.27 (14), p.1268-1270

1991

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Resonance frequency, damping, and differential gain in 1.5 mu m multiple quantum-well lasers

IEEE journal of quantum electronics, 1992-02, Vol.28 (2), p.408-414

1992

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Reliable 1.5 μm buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy (MOVPE)

Electronics letters, 1989-10, Vol.25 (21), p.1449-1451

1989

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A 1.6-μm pumped 1.9-μm thulium-doped fluoride fiber laser and amplifier of very high efficiency

IEEE journal of quantum electronics, 1995-03, Vol.31 (3), p.489-493

1995

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High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy

Journal of electronic materials, 1994-02, Vol.23 (2), p.81-85

1994

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Carrier temperature and spectral holeburning dynamics in InGaAsP quantum well laser amplifiers

Applied physics letters, 1994-01, Vol.64 (2), p.143-145

1994

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Laterality in quadrupedal and bipedal prosimians: Reach and whole-body turn in the mouse lemur (Microcebus murinus) and the galago (Galago moholi)

American journal of primatology, 1992, Vol.26 (3), p.191-202

1992

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Low threshold current 1.6 μm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre

Electronics letters, 1994-06, Vol.30 (12), p.973-975

1994

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Long-term reliability of strain-compensated InGaAs(P)/InP MQW BH lasers

Electronics letters, 1994-02, Vol.30 (3), p.227-229

1994

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160 nm continuous tuning of an MQW laser in an external cavity across the entire 1.3 μm communications window

Electronics letters, 1991-01, Vol.27 (1), p.95-96, Article 95

1991

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High-power 1.5μm all-MOVPE buried heterostructure graded index separate confinement multiple quantum well lasers

Electronics letters, 1989-11, Vol.25 (24), p.1635

1989

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1.3 μm MQW semiconductor optical amplifiers with high gain and output power

Electronics letters, 1991-01, Vol.27 (2), p.165-166

1991

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The " gain-lever" effect in InGaAsP/InP multiple quantum welllasers

Journal of lightwave technology, 1995-02, Vol.13 (2), p.283-289

1995

Volltextzugriff (PDF)

High-quality compressively strained InP-based GaInAs(P)/GaInAsP multiquantum well laser structures grown by metallorganic vapor phase epitaxy

Journal of electronic materials, 1994-01, Vol.23 (2), p.81-85

1994

Volltextzugriff (PDF)

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Molar Characteristics of Exploratory and Investigatory Behavior in the Rat (Rattus norvegicus )

The "gain-lever" effect in InGaAsP/InP multiple quantum well lasers

Reduced intermodulation-free dynamic range in gain-lever lasers

Carrier heating in InGaAsP laser amplifiers due to two-photon absorption

Zero-net-strain and conventionally strained InGaAsP/InP multiquantum well lasers

Demonstration of an integrated multichannel grating cavity laser for WDM applications

242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity

A study of 0.98 mu m lasers with Ga0.50In0.50P confining layers

Low threshold current, high output power buried heterostructure MQW lasers with strained InGaAsP wells

Improved signal-to-noise ratio in gain-levered InGaAs/InP MQW lasers

1.6 μm semiconductor diode pumped thulium doped fluoride fibre laser and amplifier of very high efficiency

Zero-net-strain multiquantum well lasers

Resonance frequency, damping, and differential gain in 1.5 mu m multiple quantum-well lasers

Reliable 1.5 μm buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy (MOVPE)

A 1.6-μm pumped 1.9-μm thulium-doped fluoride fiber laser and amplifier of very high efficiency

High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy

Carrier temperature and spectral holeburning dynamics in InGaAsP quantum well laser amplifiers

Laterality in quadrupedal and bipedal prosimians: Reach and whole-body turn in the mouse lemur (Microcebus murinus) and the galago (Galago moholi)

Low threshold current 1.6 μm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre

Long-term reliability of strain-compensated InGaAs(P)/InP MQW BH lasers

160 nm continuous tuning of an MQW laser in an external cavity across the entire 1.3 μm communications window

High-power 1.5μm all-MOVPE buried heterostructure graded index separate confinement multiple quantum well lasers

1.3 μm MQW semiconductor optical amplifiers with high gain and output power

The " gain-lever" effect in InGaAsP/InP multiple quantum welllasers

High-quality compressively strained InP-based GaInAs(P)/GaInAsP multiquantum well laser structures grown by metallorganic vapor phase epitaxy

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