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Effect of alkali-metal and some quaternary-ammonium cations on the anodic dissolution of p-Si in fluoride media

Journal of electroanalytical chemistry (Lausanne, Switzerland), 1996-05, Vol.407 (1), p.105-113

1996

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Electrochemical techniques for the elucidation of the interface structure of the n-InP/aqueous electrolyte junction

Journal of electroanalytical chemistry (Lausanne, Switzerland), 1994-02, Vol.365 (1), p.283-287

1994

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Kinetic and diffusional limitations to the anodic dissolution of p-Si in fluoride media

Journal of electroanalytical chemistry (Lausanne, Switzerland), 1995-01, Vol.380 (1), p.55-61

1995

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nInP flat band potential: A pH probe in nonaqueous and mixed solvents?

Electrochimica acta, 1993-04, Vol.38 (6), p.781-786

1993

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Electron excitation during anodic decomposition of III–V compounds induced by hole injecting species (Ce 4+)

Journal of electroanalytical chemistry and interfacial electrochemistry, 1990-04, Vol.283 (1), p.177-186

1990

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Strong enhancement of the photoluminescence of n-type indium phosphide under a cathodic polarization

Applied physics letters, 1989-07, Vol.55 (2), p.145-147

1989

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Taking advantage of liquid ammonia to control the surface modification of silicon electrodes

Journal of electroanalytical chemistry and interfacial electrochemistry, 1987-09, Vol.216 (1), p.101-114

1987

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XPS studies of oxide layers on InP after oxidation in the presence of Ce4

Surface and interface analysis, 1992-06, Vol.19 (1-12), p.393-396

1992

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Dissolution Rate of III–V Compound Oxides Influence of Cerium Species

Journal of the Electrochemical Society, 1991-11, Vol.138 (11), p.L65-L66

1991

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Bias-dependent photoluminescence of InP in aqueous iodine solutions

Applied physics letters, 1985-01, Vol.46 (8), p.744-746

1985

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The Semiconductor‐Electrolyte Interface: Photocurrent and Related Parameters in Cadmium Telluride

Journal of the Electrochemical Society, 1984-01, Vol.131 (1), p.209-213

1984

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XPS studies of oxide layers on InP after oxidation in the presence of Ce 4

Surface and interface analysis, 1992-06, Vol.19 (1-12), p.393-396

1992

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Photoelectrochemical characterization of the p-Cu2O-non aqueous electrolyte junction

Electrochimica acta, 1984-04, Vol.29 (4), p.459-465

1984

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Influence of the Solvent on the Electrochemical Stability of a Semiconductor Electrode

Berichte der Bunsengesellschaft für Physikalische Chemie, 1982-04, Vol.86 (4), p.282-288

1982

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The role of the anion electronegativity in semiconductor-electrolyte and semiconductor-metal junctions

The Journal of chemical physics, 1984-04, Vol.80 (8), p.3767-3773

1984

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Properties of semiconductor—molten salt electrolyte interface: review of the semiconductor—ammoniate of sodium iodide junctions

Electrochimica acta, 1983-10, Vol.28 (10), p.1439-1452

1983

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Reduction of iodine. Evidence for a strong interaction of iodine with GaP and InP compounds

Journal of electroanalytical chemistry and interfacial electrochemistry, 1985-01, Vol.189 (1), p.143-154

1985

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Electron yield X ray absorption spectroscopy studies of electrochemically prepared Cu/InP interfaces

Physica. B, Condensed matter, 1989-06, Vol.158 (1-3), p.198-199

1989

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A study of the mechanisms of O2 reduction at n- and p-InP in acid aqueous electrolyte

Journal of electroanalytical chemistry and interfacial electrochemistry, 1988-06, Vol.247 (1-2), p.265-276

1988

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Behavior of n-type and p-type silicon in anhydrous liquid ammonia. The solvated electron generation: a supra-band-edge reaction

Journal of physical chemistry (1952), 1984-08, Vol.88 (17), p.3826-3833

1984

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Experimental study of the oxidation-reduction reaction on gold electrodes of the tungsten W(VI)/W(V) couple inside the dodecatungstosilicate anion

Journal of electroanalytical chemistry and interfacial electrochemistry, 1979-01, Vol.105 (1), p.71-83

1979

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ChemInform Abstract: n-InP Flat Band Potential: A pH Probe in Nonaqueous and Mixed Solvents?

ChemInform, 1993-06, Vol.24 (25), p.no-no

1993

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Fuzzy modeling of inventory control system in uncertain environment

2007 International Symposium on Logistics and Industrial Informatics, 2007, p.53-57

2007

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Mise en évidence des mécanismes d'injection de porteurs majoritaires à l'interface semiconducteur/électrolyte

Journal de physique. III (Les Ulis), 1994-02, Vol.4 (2), p.273-291

1994

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Weakening of the hole injection effect proceeding from the reduction of ceric species after oxidation of indium phosphide compounds

Journal of electroanalytical chemistry and interfacial electrochemistry, 1991-08, Vol.312 (1), p.301-307

1991

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Effect of alkali-metal and some quaternary-ammonium cations on the anodic dissolution of p-Si in fluoride media

Electrochemical techniques for the elucidation of the interface structure of the n-InP/aqueous electrolyte junction

Kinetic and diffusional limitations to the anodic dissolution of p-Si in fluoride media

nInP flat band potential: A pH probe in nonaqueous and mixed solvents?

Electron excitation during anodic decomposition of III–V compounds induced by hole injecting species (Ce 4+)

Strong enhancement of the photoluminescence of n-type indium phosphide under a cathodic polarization

Taking advantage of liquid ammonia to control the surface modification of silicon electrodes

XPS studies of oxide layers on InP after oxidation in the presence of Ce4

Dissolution Rate of III–V Compound Oxides Influence of Cerium Species

Bias-dependent photoluminescence of InP in aqueous iodine solutions

The Semiconductor‐Electrolyte Interface: Photocurrent and Related Parameters in Cadmium Telluride

XPS studies of oxide layers on InP after oxidation in the presence of Ce 4

Photoelectrochemical characterization of the p-Cu2O-non aqueous electrolyte junction

Influence of the Solvent on the Electrochemical Stability of a Semiconductor Electrode

The role of the anion electronegativity in semiconductor-electrolyte and semiconductor-metal junctions

Properties of semiconductor—molten salt electrolyte interface: review of the semiconductor—ammoniate of sodium iodide junctions

Reduction of iodine. Evidence for a strong interaction of iodine with GaP and InP compounds

Electron yield X ray absorption spectroscopy studies of electrochemically prepared Cu/InP interfaces

A study of the mechanisms of O2 reduction at n- and p-InP in acid aqueous electrolyte

Behavior of n-type and p-type silicon in anhydrous liquid ammonia. The solvated electron generation: a supra-band-edge reaction

Experimental study of the oxidation-reduction reaction on gold electrodes of the tungsten W(VI)/W(V) couple inside the dodecatungstosilicate anion

ChemInform Abstract: n-InP Flat Band Potential: A pH Probe in Nonaqueous and Mixed Solvents?

Fuzzy modeling of inventory control system in uncertain environment

Mise en évidence des mécanismes d'injection de porteurs majoritaires à l'interface semiconducteur/électrolyte

Weakening of the hole injection effect proceeding from the reduction of ceric species after oxidation of indium phosphide compounds

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