UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.79-82

2014

Volltextzugriff (PDF)

Ultra high voltage MOS controlled 4H-SiC power switching devices

Semiconductor science and technology, 2015-08, Vol.30 (8), p.84001

2015

Volltextzugriff (PDF)

A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation

IEEE electron device letters, 2010-05, Vol.31 (5), p.470-472

2010

Volltextzugriff (PDF)

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 °C

IEEE electron device letters, 2013, Vol.34 (3), p.384-386

2013

Volltextzugriff (PDF)

Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

IEEE electron device letters, 2012-07, Vol.33 (7), p.952-954

2012

Volltextzugriff (PDF)

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Materials science forum, 2010-04, Vol.645-648, p.969-974

2010

Volltextzugriff (PDF)

Hard-Switch Stressing of Vertical-Channel Implanted-Gate SiC JFETs

IEEE electron device letters, 2012-01, Vol.33 (1), p.86-88

2012

Volltextzugriff (PDF)

1000-V, 30-A 4H-SiC BJTs with high current gain

IEEE electron device letters, 2005-03, Vol.26 (3), p.175-177

2005

Volltextzugriff (PDF)

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Materials science forum, 2010-01, Vol.645-648, p.1147-1150

2010

Volltextzugriff (PDF)

Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

IEEE electron device letters, 2009-07, Vol.30 (7), p.736-738

2009

Volltextzugriff (PDF)

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

Materials science forum, 2010-01, Vol.645-648, p.929-932

2010

Volltextzugriff (PDF)

4 kV 4H-SiC epitaxial emitter bipolar junction transistors

IEEE electron device letters, 2005-07, Vol.26 (7), p.470-472

2005

Volltextzugriff (PDF)

Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications

Journal of electronic materials, 2006-04, Vol.35 (4), p.777-794

2006

Volltextzugriff (PDF)

Half-bridge inverter using 4H-SiC gate turn-off thyristors

IEEE electron device letters, 2002-04, Vol.23 (4), p.194-196

2002

Volltextzugriff (PDF)

Inductive switching of 4H-SiC gate turn-off thyristors

IEEE electron device letters, 2002-06, Vol.23 (6), p.318-320

2002

Volltextzugriff (PDF)

High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET

IEEE electron device letters, 2013-04, Vol.34 (4), p.526-528, Article 526

2013

Volltextzugriff (PDF)

15-kV single-bias all-optical ETO thyristor

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.313-316

2014

Volltextzugriff (PDF)

Evaluation of Si and SiC SGTOs for High-Action Army Applications

IEEE transactions on magnetics, 2009-01, Vol.45 (1), p.402-406

2009

Volltextzugriff (PDF)

Characterization of Ti schottky diodes on epi-regrown 4H-SiC

Journal of electronic materials, 2006-04, Vol.35 (4), p.754-757

2006

Volltextzugriff (PDF)

Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Journal of applied physics, 1997-06, Vol.81 (11), p.7687-7689

1997

Volltextzugriff (PDF)

Silicon carbide FETs for high temperature nuclear environments

IEEE transactions on nuclear science, 1996-06, Vol.43 (3), p.1642-1648

1996

Volltextzugriff (PDF)

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Journal of electronic materials, 2006-04, Vol.35 (4), p.777-794

2006

Volltextzugriff (PDF)

Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005, 2005, p.271-274

2005

Volltextzugriff (PDF)

AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Thin solid films, 2001-11, Vol.398, p.575-580

2001

Volltextzugriff (PDF)

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 ^\hbox

IEEE electron device letters, 2013-03, Vol.34 (3), p.384-386

2013

Volltextzugriff (PDF)

1 – 25 von 109

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(56)
Mit Volltextzugriff
(100)

Publikationsform

Artikel
(55)
Tagungsberichte
(54)

Sprache

Englisch
(109)

Erscheinungsjahr

n.n

Thema

Silicon Carbide
(58)
Science & Technology
(51)
Technology
(47)
Engineering
(35)
Engineering, Electrical & Electronic
(33)
Voltage
(24)
Temperature
(22)
Materials Science
(20)
Switches
(20)
Exact Sciences And Technology
(18)
Laboratories
(17)
Thyristors
(17)
Applied Sciences
(16)
Jfet
(16)
Physics
(16)
Electronics
(14)
Logic Gates
(14)
Materials Science, Multidisciplinary
(14)
Physical Sciences
(14)
Devices
(13)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

Ultra high voltage MOS controlled 4H-SiC power switching devices

A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 °C

Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Hard-Switch Stressing of Vertical-Channel Implanted-Gate SiC JFETs

1000-V, 30-A 4H-SiC BJTs with high current gain

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations

4 kV 4H-SiC epitaxial emitter bipolar junction transistors

Advances in Pulsed-Laser-Deposited AlN Thin Films for High-Temperature Capping, Device Passivation, and Piezoelectric-Based RF MEMS/NEMS Resonator Applications

Half-bridge inverter using 4H-SiC gate turn-off thyristors

Inductive switching of 4H-SiC gate turn-off thyristors

High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET

15-kV single-bias all-optical ETO thyristor

Evaluation of Si and SiC SGTOs for High-Action Army Applications

Characterization of Ti schottky diodes on epi-regrown 4H-SiC

Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Silicon carbide FETs for high temperature nuclear environments

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors

AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 ^\hbox

Suchergebnisse filtern