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Technological aspects of epitaxial CoSi2 layers for CMOS

Applied surface science, 1993-11, Vol.73, p.19-24

1993

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A new method for measuring the saturation velocity of submicron CMOS transistors

Solid-state electronics, 1995-04, Vol.38 (4), p.791-793

1995

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Dislocation formation in silicon implanted at different temperatures

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-11, Vol.15 (2), p.173-186

1992

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Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Journal of applied physics, 1992-04, Vol.71 (8), p.3780-3784

1992

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Two-step anneals to avoid bridging during Co silicidation

Applied surface science, 1993-01, Vol.73, p.162-166

1993

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Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

Applied physics letters, 1991-03, Vol.58 (9), p.922-924

1991

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Electrically active, ion implanted boron at the solubility limit in silicon

Applied physics letters, 1993-08, Vol.63 (8), p.1134-1136

1993

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Avoiding preamorphization damage in MeV heavy ion-implanted silicon

Applied physics letters, 1991-06, Vol.58 (24), p.2827-2829

1991

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Reduction of secondary defect formation in MeV B+ ion-implanted Si(100)

Applied physics letters, 1989-10, Vol.55 (18), p.1838-1840

1989

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Impact of silicidation on the excess noise behaviour of mos transistors

Solid-state electronics, 1995-11, Vol.38 (11), p.1893-1897

1995

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On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/ p−Si contacts

Solid State Electronics, 1993-05, Vol.36 (5), p.753-759

1993

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Avoiding dislocations in ion-implanted silicon

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.357-362

1992

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Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

Thin solid films, 1994-10, Vol.251 (1), p.45-50

1994

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Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Thin solid films, 1994-03, Vol.240 (1), p.110-113

1994

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Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

Materials science & engineering. B, Solid-state materials for advanced technology, 1990-09, Vol.7 (1), p.149-165

1990

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Nondestructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Thin solid films, 1994-03, Vol.240 (1-2), p.110-113

1994

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Formation of ultrathin CoSi2 films using a two-step limited reaction process

Journal of materials research, 1993-12, Vol.8 (12), p.3111-3121

1993

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In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Applied physics letters, 1992-11, Vol.61 (19), p.2296-2298

1992

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Pre-amorphization damage in ion-implanted silicon

Materials science reports, 1991-08, Vol.6 (7), p.275-366

1991

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Thermal stability of CoSi2 on submicron polycrystalline silicon lines

Microelectronic engineering, 1992-09, Vol.19 (1-4), p.665-668

1992

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Channeling implantation of B and P in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.615-619

1991

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Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990-03, Vol.48 (1-4), p.448-452

1990

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The role of extended defects on transient boron diffusion in ion-implanted silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-02, Vol.12 (4), p.307-325

1992

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Deep implants by channeling implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 1989-02, Vol.2 (1), p.139-143

1989

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Pre-amorphization damage in Si(100) implanted with high mass MeV ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-01, Vol.62 (3), p.372-376

1992

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Technological aspects of epitaxial CoSi2 layers for CMOS

A new method for measuring the saturation velocity of submicron CMOS transistors

Dislocation formation in silicon implanted at different temperatures

Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Two-step anneals to avoid bridging during Co silicidation

Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

Electrically active, ion implanted boron at the solubility limit in silicon

Avoiding preamorphization damage in MeV heavy ion-implanted silicon

Reduction of secondary defect formation in MeV B+ ion-implanted Si(100)

Impact of silicidation on the excess noise behaviour of mos transistors

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/ p−Si contacts

Avoiding dislocations in ion-implanted silicon

Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

Nondestructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Formation of ultrathin CoSi2 films using a two-step limited reaction process

In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Pre-amorphization damage in ion-implanted silicon

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

Channeling implantation of B and P in silicon

Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

The role of extended defects on transient boron diffusion in ion-implanted silicon

Deep implants by channeling implantation

Pre-amorphization damage in Si(100) implanted with high mass MeV ions

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