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Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

MRS bulletin, 2009-05, Vol.34 (5), p.318-323

2009

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High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non- c -Plane Oriented GaN Substrates

Applied physics express, 2010-11, Vol.3 (11), p.112101

2010

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Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Japanese Journal of Applied Physics, 2007-03, Vol.46 (3L), p.L190

2007

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Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs

Physica status solidi. PSS-RRL. Rapid research letters, 2007-05, Vol.1 (3), p.125-127

2007

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High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

Japanese Journal of Applied Physics, 2007-02, Vol.46 (2L), p.L126

2007

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Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

Applied physics letters, 2007-10, Vol.91 (18)

2007

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Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN

Journal of the Electrochemical Society, 2009, Vol.156 (1), p.H47

2009

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Observation of whispering gallery modes in nonpolar m -plane GaN microdisks

Applied physics letters, 2009-06, Vol.94 (25), p.251116-251116-3

2009

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Photoelectrochemical Undercut Etching of m-Plane GaN for Microdisk Applications

Journal of the Electrochemical Society, 2009, Vol.156 (10), p.H767

2009

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Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes

Japanese Journal of Applied Physics, 2007-08, Vol.46 (8L), p.L761

2007

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Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide

Japanese Journal of Applied Physics, 2005-01, Vol.44 (4L), p.L502

2005

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Low extended defect density nonpolar m -plane GaN by sidewall lateral epitaxial overgrowth

Applied physics letters, 2008-10, Vol.93 (14), p.142108-142108-3

2008

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Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S800-S803

2009

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Electroluminescence efficiency of -oriented InGaN-based light-emitting diodes at low temperature

Journal of physics. D, Applied physics, 2008-04, Vol.41 (8), p.082001-082001 (5)

2008

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Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4R), p.2112

2008

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Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature

Japanese Journal of Applied Physics, 2006-10, Vol.45 (10R), p.7661

2006

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Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents

Japanese Journal of Applied Physics, 2007-07, Vol.46 (7L), p.L627

2007

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Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature

Japanese Journal of Applied Physics, 2007-11, Vol.46 (11R), p.7309

2007

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Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs

Journal of electronic materials, 2006-04, Vol.35 (4), p.750-753

2006

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AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4L), p.L284

2007

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Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes: Nonpolar and Semipolar Group III Nitride-Based Materials

MRS bulletin, 2009, Vol.34 (5), p.318-323

2009

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47.1: Invited Paper: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.677-680

2011

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Study of nonpolar m -plane In Ga N ∕ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

Applied physics letters, 2007-11, Vol.91 (18), p.181120-181120-3

2007

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Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs: Group III Nitrides, SiC, and ZnO

Journal of electronic materials, 2006, Vol.35 (4), p.750-753

2006

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Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science, 2008, p.1-2

2008

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Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non- c -Plane Oriented GaN Substrates

Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs

High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN

Observation of whispering gallery modes in nonpolar m -plane GaN microdisks

Photoelectrochemical Undercut Etching of m-Plane GaN for Microdisk Applications

Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes

Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide

Low extended defect density nonpolar m -plane GaN by sidewall lateral epitaxial overgrowth

Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates

Electroluminescence efficiency of -oriented InGaN-based light-emitting diodes at low temperature

Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes

Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature

Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents

Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature

Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs

AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes: Nonpolar and Semipolar Group III Nitride-Based Materials

47.1: Invited Paper: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems

Study of nonpolar m -plane In Ga N ∕ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs: Group III Nitrides, SiC, and ZnO

Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates

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