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Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

Nature nanotechnology, 2020-02, Vol.15 (2), p.111-117

2020

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Postcycling LRS Retention Analysis in HfO2/Hf RRAM 1T1R Device

IEEE electron device letters, 2013-05, Vol.34 (5), p.626-628

2013

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IEEE_Xplore

Size dependence of spin-torque switching in perpendicular magnetic tunnel junctions

Applied physics letters, 2018-11, Vol.113 (22)

2018

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Field-free switching of magnetic tunnel junctions driven by spin–orbit torques at sub-ns timescales

Applied physics letters, 2020-06, Vol.116 (23)

2020

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Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1114-1121

2013

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Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Journal of applied physics, 2021-10, Vol.130 (16)

2021

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Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3243-3249

2012

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Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

Solid-state electronics, 2024-04, Vol.214, p.108866, Article 108866

2024

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Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Scientific reports, 2022-11, Vol.12 (1), p.19380-19380, Article 19380

2022

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Key material parameters driving CBRAM device performances

Faraday discussions, 2019-02, Vol.213, p.67-85

2019

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Testing STT-MRAM: Manufacturing Defects, Fault Models, and Test Solutions

2021 IEEE International Test Conference (ITC), 2021, p.143-152

2021

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IEEE_Xplore

In silico screening for As/Se-free ovonic threshold switching materials

npj computational materials, 2023-06, Vol.9 (1), p.96-8, Article 96

2023

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Effect of Tantalum Spacer Thickness and Deposition Conditions on the Properties of MgO/CoFeB/Ta/CoFeB/MgO Free Layers

IEEE magnetics letters, 2019-01, Vol.10, p.1-4

2019

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IEEE_Xplore

Impact of Charge Trapping Layer Thickness and New Trade-Off in Performance Characteristics of 3-D SONOS Devices

IEEE electron device letters, 2013-05, Vol.34 (5), p.632-634

2013

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IEEE_Xplore

Thermal stability analysis and modelling of advanced perpendicular magnetic tunnel junctions

AIP advances, 2018-05, Vol.8 (5), p.055909-055909-6

2018

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Endurance/Retention Trade-off on \hbox/\hbox Cap 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1114-1121

2013

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IEEE_Xplore

Two-dimensional materials prospects for non-volatile spintronic memories

Nature (London), 2022-06, Vol.606 (7915), p.663-673

2022

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Characterization, Modeling, and Test of Intermediate State Defects in STT-MRAMs

IEEE transactions on computers, 2022-09, Vol.71 (9), p.2219-2233

2022

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IEEE_Xplore

MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

IEEE transactions on computer-aided design of integrated circuits and systems, 2022-11, Vol.41 (11), p.4991-5004

2022

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IEEE_Xplore

Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

Physical review applied, 2021-05, Vol.15 (5), Article 054055

2021

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Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime

Solid-state electronics, 2024-09, Vol.219, p.108964, Article 108964

2024

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Spin–Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions

ACS nano, 2024-05, Vol.18 (21), p.13506-13516

2024

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Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Nano letters, 2023-06, Vol.23 (12), p.5482-5489

2023

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Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.567-573

2024

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IEEE_Xplore

Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural Network

IEEE electron device letters, 2018-11, Vol.39 (11), p.1652-1655

2018

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IEEE_Xplore

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Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

Postcycling LRS Retention Analysis in HfO2/Hf RRAM 1T1R Device

Size dependence of spin-torque switching in perpendicular magnetic tunnel junctions

Field-free switching of magnetic tunnel junctions driven by spin–orbit torques at sub-ns timescales

Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM

Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM

Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Key material parameters driving CBRAM device performances

Testing STT-MRAM: Manufacturing Defects, Fault Models, and Test Solutions

In silico screening for As/Se-free ovonic threshold switching materials

Effect of Tantalum Spacer Thickness and Deposition Conditions on the Properties of MgO/CoFeB/Ta/CoFeB/MgO Free Layers

Impact of Charge Trapping Layer Thickness and New Trade-Off in Performance Characteristics of 3-D SONOS Devices

Thermal stability analysis and modelling of advanced perpendicular magnetic tunnel junctions

Endurance/Retention Trade-off on \hbox/\hbox Cap 1T1R Bipolar RRAM

Two-dimensional materials prospects for non-volatile spintronic memories

Characterization, Modeling, and Test of Intermediate State Defects in STT-MRAMs

MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

Interplay of Voltage Control of Magnetic Anisotropy, Spin-Transfer Torque, and Heat in the Spin-Orbit-Torque Switching of Three-Terminal Magnetic Tunnel Junctions

Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime

Spin–Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions

Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor

Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural Network

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