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Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor

Applied physics letters, 2013-10, Vol.103 (18)

2013

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Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-11, Vol.31 (6)

2013

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Conformal Formation of (GeTe2)(1–x)(Sb2Te3) x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Chemistry of materials, 2012-06, Vol.24 (11), p.2099-2110

2012

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Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3357-3363

2012

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Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

Applied physics letters, 2012-05, Vol.100 (20)

2012

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The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application

Journal of applied physics, 2011-07, Vol.110 (2)

2011

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Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2094-2103

2011

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The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

Applied physics letters, 2012-04, Vol.100 (18)

2012

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High rate dry etching of InGaZnO by BCl 3 /O 2 plasma

Applied physics letters, 2011-08, Vol.99 (6), p.062110-062110-3

2011

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Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

Applied physics. A, Materials science & processing, 2011-03, Vol.102 (4), p.827-834

2011

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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous- \hbox\hbox\hbox

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1128-1135

2013

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High rate dry etching of InGaZnO by BCl3/O2 plasma

Applied physics letters, 2011-08, Vol.99 (6)

2011

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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1128-1135

2013

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Turn-Around Effect of Vth Shift During the Positive Bias Temperature Instability of the n-Type Transistor With HfOxNy Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1479-1481

2010

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Impacts of Zr Composition in \hbox \hbox\hbox Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2094-2103

2011

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Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics

IEEE electron device letters, 2010-12, Vol.31 (12), p.1479-1481

2010

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The Effect of Light Illumination on Transfer Curve and Stability of Amorphous Hf-In-ZnO Thin Film Transistors

ECS transactions, 2010, Vol.33 (5), p.319-324

2010

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Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films

ACS applied materials & interfaces, 2014-05, Vol.6 (10), p.7910-7917

2014

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Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation

Applied physics letters, 2010-09, Vol.97 (13)

2010

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Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness

Journal of applied physics, 2012-01, Vol.111 (2), p.024511-024511-8

2012

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Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage

Physica status solidi. PSS-RRL. Rapid research letters, 2015-07, Vol.9 (7), p.410-413

2015

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Improved etching characteristics of silicon-dioxide by enhanced inductively coupled plasma

Surface & coatings technology, 2000-11, Vol.133, p.589-592

2000

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Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO 2 Thin Films

ACS applied materials & interfaces, 2014-05, Vol.6 (10), p.7910-7917

2014

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Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis

Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (40), p.6695-6702

2013

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Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films

Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor

Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer

Conformal Formation of (GeTe2)(1–x)(Sb2Te3) x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application

Impacts of Zr Composition in Hf1-xZrxOy Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

High rate dry etching of InGaZnO by BCl 3 /O 2 plasma

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous- \hbox\hbox\hbox

High rate dry etching of InGaZnO by BCl3/O2 plasma

The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7

Turn-Around Effect of Vth Shift During the Positive Bias Temperature Instability of the n-Type Transistor With HfOxNy Gate Dielectrics

Impacts of Zr Composition in \hbox \hbox\hbox Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

Turn-Around Effect of V Shift During the Positive Bias Temperature Instability of the n-Type Transistor With \hbox\hbox Gate Dielectrics

The Effect of Light Illumination on Transfer Curve and Stability of Amorphous Hf-In-ZnO Thin Film Transistors

Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films

Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation

Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness

Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage

Improved etching characteristics of silicon-dioxide by enhanced inductively coupled plasma

Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO 2 Thin Films

Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis

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