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Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

Applied physics letters, 2000-11, Vol.77 (20), p.3281-3283

2000

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Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

Applied physics letters, 2000-04, Vol.76 (16), p.2250-2252

2000

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High temperature high-dose implantation of aluminum in 4H-SiC

Applied physics letters, 2004-06, Vol.84 (25), p.5195-5197

2004

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Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

Journal of applied physics, 1996-02, Vol.79 (3), p.1583-1594

1996

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Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Applied physics letters, 2002-04, Vol.80 (17), p.3219-3221

2002

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Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field

Journal of applied physics, 1991-10, Vol.70 (7), p.3734-3747

1991

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Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

Applied physics letters, 2000-09, Vol.77 (10), p.1437-1439

2000

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Low-dose aluminum and boron implants in 4H and 6H silicon carbide

Journal of applied physics, 2001-09, Vol.90 (6), p.2796-2805

2001

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Low-dose n -type nitrogen implants in 4H-SiC

Applied physics letters, 2002-12, Vol.81 (26), p.4958-4960

2002

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Hall Effect Measurements in SiC Buried-Channel MOS Devices

Materials science forum, 2004-01, Vol.457-460, p.1287-1292

2004

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A 475-V high-voltage 6H-SiC lateral MOSFET

IEEE electron device letters, 1999-08, Vol.20 (8), p.431-433

1999

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Lateral distribution of hot-carrier-induced interface traps in MOSFETs

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2221-2228

1988

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IEEE_Xplore

Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility

Materials science forum, 2004-01, Vol.457-460, p.689-692

2004

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Numerical simulation of 3-level charge pumping

Journal of applied physics, 1992-05, Vol.71 (9), p.4415-4421

1992

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Observation of H+ motion during interface trap formation

IEEE transactions on nuclear science, 1990-12, Vol.37 (6), p.1624-1631

1990

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Hot-hole-induced negative oxide charges in n-MOSFETs

IEEE transactions on electron devices, 1995-08, Vol.42 (8), p.1473-1480

1995

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IEEE_Xplore

Formation of interface traps in metal-oxide -semiconductor devices during isochronal annealing after irradiation at 78 K

Journal of applied physics, 1991-12, Vol.70 (12), p.7434-7442

1991

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Comparison of interface trap densities measured by the Jenq and charge pumping techniques

Journal of applied physics, 1993-09, Vol.74 (5), p.3303-3306

SAKS, N. S

1993

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Time dependence of interface trap formation in MOSFETs following pulsed irradiation

IEEE transactions on nuclear science, 1988-12, Vol.35 (6), p.1168-1177

1988

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IEEE_Xplore

Measurement of single interface trap capture cross sections with charge pumping

Applied physics letters, 1997-06, Vol.70 (25), p.3380-3382

Saks, N. S.

1997

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Formation of interface traps in MOSFETs during annealing following low temperature irradiation

IEEE transactions on nuclear science, 1988-12, Vol.35 (6), p.1234-1240

1988

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IEEE_Xplore

Effects of switched gate bias on radiation-induced interface trap formation (MOS transistors)

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1991-12, Vol.38 (6), p.1130-1139

1991

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IEEE_Xplore

Interface trap formation via the two-stage H(+) process

IEEE transactions on nuclear science, 1989-12, Vol.36 (6), p.1848-1857

1989

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Time-dependence of the interface trap build-up in deuterium-annealed oxides after irradiation

Applied physics letters, 1992, Vol.61 (25), p.3014-3016

1992

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Initial hydrogen ion profiles during interface trap formation in MOS devices

IEEE transactions on nuclear science, 1992-12, Vol.39 (6), p.2236-2243

1992

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IEEE_Xplore

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Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

High temperature high-dose implantation of aluminum in 4H-SiC

Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field

Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

Low-dose aluminum and boron implants in 4H and 6H silicon carbide

Low-dose n -type nitrogen implants in 4H-SiC

Hall Effect Measurements in SiC Buried-Channel MOS Devices

A 475-V high-voltage 6H-SiC lateral MOSFET

Lateral distribution of hot-carrier-induced interface traps in MOSFETs

Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility

Numerical simulation of 3-level charge pumping

Observation of H+ motion during interface trap formation

Hot-hole-induced negative oxide charges in n-MOSFETs

Formation of interface traps in metal-oxide -semiconductor devices during isochronal annealing after irradiation at 78 K

Comparison of interface trap densities measured by the Jenq and charge pumping techniques

Time dependence of interface trap formation in MOSFETs following pulsed irradiation

Measurement of single interface trap capture cross sections with charge pumping

Formation of interface traps in MOSFETs during annealing following low temperature irradiation

Effects of switched gate bias on radiation-induced interface trap formation (MOS transistors)

Interface trap formation via the two-stage H(+) process

Time-dependence of the interface trap build-up in deuterium-annealed oxides after irradiation

Initial hydrogen ion profiles during interface trap formation in MOS devices

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