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Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire

Journal of crystal growth, 2007-09, Vol.307 (2), p.358-362

2007

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High-power GaN -based blue-violet laser diodes with AlGaN ∕ GaN multiquantum barriers

Applied physics letters, 2006-03, Vol.88 (11), p.111101-111101-3

2006

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Single-mode blue-violet laser diodes with low beam divergence and high COD level

IEEE photonics technology letters, 2006-05, Vol.18 (9), p.1001-1003

2006

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Highly stable temperature characteristics of InGaN blue laser diodes

Applied physics letters, 2006-07, Vol.89 (3), p.031122-031122-3

2006

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Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates

Applied physics letters, 2007-03, Vol.90 (13), p.131908-131908-3

2007

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Improved thermal characteristic of InGaN laser diodes with AlGaN ridge passivation layer

Electronics letters, 2009, Vol.45 (25), p.1318-1320

2009

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Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes

Journal of applied physics, 2008-05, Vol.103 (10), p.103101-103101-5

2008

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Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

Journal of applied physics, 2007-07, Vol.102 (1), p.013508-013508-5

2007

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Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode

Journal of crystal growth, 2006-01, Vol.287 (2), p.554-557

2006

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Characteristics of GaN-based laser diodes for post-DVD applications

Physica status solidi. A, Applied research, 2004-09, Vol.201 (12), p.2717-2720

2004

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Enhanced optical properties of InGaN MQWs with InGaN underlying layers

Journal of crystal growth, 2006-01, Vol.287 (2), p.558-561

2006

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Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect

Applied physics letters, 2007-01, Vol.90 (5), p.051918-051918-3

2007

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Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

Physica. B, Condensed matter, 2006-04, Vol.376, p.532-535

2006

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Radiative and non-radiative transitions in blue quantum wells embedded in AlInGaN-based laser diodes

Physica status solidi. C, 2007-06, Vol.4 (7), p.2780-2783

2007

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Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire

Journal of crystal growth, 2007, Vol.298, p.695-698

2007

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Growth and characterization of AlxGa1-xN LEO substrates

Physica. B, Condensed matter, 2006-04, Vol.376-377, p.499-501

2006

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Inhomogeneity of InGaN quantum wells in GaN-based blue laser diodes

Physica status solidi. C, 2007-06, Vol.4 (7), p.2788-2792

2007

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Analysis of optical loss on blue-violet laser diodes

Physica status solidi. C, 2006-06, Vol.3 (6), p.2178-2181

2006

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Comparative optical studies on violet InGaN quantum well laser diode structures grown on sapphire and GaN substrates

Physica status solidi. C, 2006-06, Vol.3 (6), p.2195-2198

2006

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Carrier confinement effect enhanced by AlGaN/GaN multi-quantum barrier in AlInGaN based high power blue-violet laser diodes

Physica status solidi. C, 2006-06, Vol.3 (6), p.2215-2218

2006

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Improved thermal characteristic of InGaN laser diodes with AlGaN ridge passivation layer

Electronics letters, 2009-12, Vol.45 (25), p.1-1

2009

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Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

Applied physics letters, 2003-09, Vol.83 (11), p.2121-2123

2003

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Recent progress of high power GaN-based violet laser diodes

Physica status solidi. C, 2003-12 (7), p.2278-2282

2003

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High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers

Applied physics letters, 2008-09, Vol.93 (9), p.091109-091109-3

2008

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Growth pressure dependence of residual strain and threading dislocations in the GaN layer

Physica status solidi. C, 2004-09, Vol.1 (10), p.2458-2461

2004

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Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire

High-power GaN -based blue-violet laser diodes with AlGaN ∕ GaN multiquantum barriers

Single-mode blue-violet laser diodes with low beam divergence and high COD level

Highly stable temperature characteristics of InGaN blue laser diodes

Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates

Improved thermal characteristic of InGaN laser diodes with AlGaN ridge passivation layer

Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes

Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode

Characteristics of GaN-based laser diodes for post-DVD applications

Enhanced optical properties of InGaN MQWs with InGaN underlying layers

Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect

Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

Radiative and non-radiative transitions in blue quantum wells embedded in AlInGaN-based laser diodes

Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire

Growth and characterization of AlxGa1-xN LEO substrates

Inhomogeneity of InGaN quantum wells in GaN-based blue laser diodes

Analysis of optical loss on blue-violet laser diodes

Comparative optical studies on violet InGaN quantum well laser diode structures grown on sapphire and GaN substrates

Carrier confinement effect enhanced by AlGaN/GaN multi-quantum barrier in AlInGaN based high power blue-violet laser diodes

Improved thermal characteristic of InGaN laser diodes with AlGaN ridge passivation layer

Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

Recent progress of high power GaN-based violet laser diodes

High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers

Growth pressure dependence of residual strain and threading dislocations in the GaN layer

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