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Factors affecting the dissociation width of dissociated dislocations in FCC metals and alloys

Journal of materials science, 2016-01, Vol.51 (1), p.405-424

Saka, Hiroyasu

2016

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Electron Microscopy on Mechanism of Voidage and Cracking in Si by Injection of a Permeable Infra-Red Laser

Materials transactions, 2024-07, Vol.65 (7), p.711-722, Article MT-M2024022

2024

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Whereabouts of missing atoms in a laser-injected Si (Part III)

Philosophical magazine (Abingdon, England), 2023-07, Vol.103 (14), p.1345-1359

2023

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Whereabouts of missing atoms in a laser-injected Si: Part 1

Philosophical magazine (Abingdon, England), 2019-08, Vol.99 (15), p.1849-1865

2019

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透過性赤外線レーザ注入によるSi中のボイドと亀裂の発生機構に関する電子顕微鏡観察

日本金属学会誌, 2024/04/01, Vol.88(4), pp.69-80

2024

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Crystal structures of high-pressure phases formed in Si by laser irradiation

Microscopy, 2018-02, Vol.67 (1), p.30-36

2018

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Electron microscopy of voids in Si formed by permeable pulse laser irradiation

Journal of electron microscopy, 2017-10, Vol.66 (5), p.328-336

2017

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Thermal stability of laser-induced modified volumes in Si as studied by in situ and ex situ heating experiments

Microscopy, 2018-04, Vol.67 (2), p.112-120

2018

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Whereabouts of missing atoms in a laser-injected Si (part IV): interaction of plasma Si with dislocations in a laser-injected Si

Philosophical magazine (Abingdon, England), 2024-01, Vol.104 (1), p.55-67

2024

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In Situ Heating Transmission Electron Microscopy

MRS bulletin, 2008-02, Vol.33 (2), p.93-100

2008

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In Situ Transmission Electron Microscopy Studies of the Solid–Liquid Interface

MRS bulletin, 2004-12, Vol.29 (12), p.951-957

2004

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Electron Microscopy on Mechanism of Voidage and Cracking in Si by Injection of a Permeable Infra-Red Laser

Journal of the Japan Institute of Metals and Materials, 2024, pp.J2023032

2024

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Inclination of a threading dislocation in an epilayer of 4H-SiC

Japanese Journal of Applied Physics, 2014-11, Vol.53 (11), p.111302-1-111302-5

2014

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TEM observation of interfaces in a solder joint in a semiconductor device

Science and technology of advanced materials, 2002-01, Vol.3 (3), p.261-270

2002

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Surface damage induced by focused-ion-beam milling in a Si/Si p–n junction cross-sectional specimen

Applied surface science, 2005-02, Vol.241 (1), p.80-86

2005

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Long-term natural ageing of a dissociated dislocation in a Cu-13.43 at.% Al alloy

Philosophical magazine letters, 2014-07, Vol.94 (7), p.455-459

Saka, Hiroyasu

2014

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Shuffle-set dislocation nucleation in semiconductor silicon device

Philosophical magazine letters, 2010-10, Vol.90 (10), p.707-714

2010

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The dissociation modes of threading screw dislocations in 4H-SiC

Philosophical magazine letters, 2013-10, Vol.93 (10), p.591-600

2013

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Resolving individual Shockley partials of a dissociated dislocation by STEM

Philosophical magazine letters, 2017-02, Vol.97 (2), p.74-81

2017

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Dislocations in 4H-SiC Epilayers

Journal of the Vacuum Society of Japan, 2017, Vol.60(8), pp.285-291

SAKA, Hiroyasu

2017

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Dislocations in 4H-SiC Epilayers

Shinkū, 2017, Vol.60 (8), p.285-291

SAKA, Hiroyasu

2017

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Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam

Applied physics letters, 2002-01, Vol.80 (2), p.246-248

2002

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Toughening of ceramics by dislocation sub-boundaries

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2004-12, Vol.387, p.837-839

2004

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Characteristics of Indium-Tin-Oxide/Silver/Indium-Tin-Oxide Sandwich Films and Their Application to Simple-Matrix Liquid-Crystal Displays

Japanese Journal of Applied Physics, 2001, Vol.40 (5R), p.3332-3336

2001

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Evidence of the climb motion of a Shockley partial during glide at room temperature

Philosophical magazine letters, 2015-08, Vol.95 (8), p.433-440

2015

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Factors affecting the dissociation width of dissociated dislocations in FCC metals and alloys

Electron Microscopy on Mechanism of Voidage and Cracking in Si by Injection of a Permeable Infra-Red Laser

Whereabouts of missing atoms in a laser-injected Si (Part III)

Whereabouts of missing atoms in a laser-injected Si: Part 1

透過性赤外線レーザ注入によるSi中のボイドと亀裂の発生機構に関する電子顕微鏡観察

Crystal structures of high-pressure phases formed in Si by laser irradiation

Electron microscopy of voids in Si formed by permeable pulse laser irradiation

Thermal stability of laser-induced modified volumes in Si as studied by in situ and ex situ heating experiments

Whereabouts of missing atoms in a laser-injected Si (part IV): interaction of plasma Si with dislocations in a laser-injected Si

In Situ Heating Transmission Electron Microscopy

In Situ Transmission Electron Microscopy Studies of the Solid–Liquid Interface

Electron Microscopy on Mechanism of Voidage and Cracking in Si by Injection of a Permeable Infra-Red Laser

Inclination of a threading dislocation in an epilayer of 4H-SiC

TEM observation of interfaces in a solder joint in a semiconductor device

Surface damage induced by focused-ion-beam milling in a Si/Si p–n junction cross-sectional specimen

Long-term natural ageing of a dissociated dislocation in a Cu-13.43 at.% Al alloy

Shuffle-set dislocation nucleation in semiconductor silicon device

The dissociation modes of threading screw dislocations in 4H-SiC

Resolving individual Shockley partials of a dissociated dislocation by STEM

Dislocations in 4H-SiC Epilayers

Dislocations in 4H-SiC Epilayers

Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam

Toughening of ceramics by dislocation sub-boundaries

Characteristics of Indium-Tin-Oxide/Silver/Indium-Tin-Oxide Sandwich Films and Their Application to Simple-Matrix Liquid-Crystal Displays

Evidence of the climb motion of a Shockley partial during glide at room temperature

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