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Lateral resolution in laser-patterned thermal processing of GaAs

Applied surface science, 1998-03, Vol.125 (3), p.325-331

Sadra, K.

1998

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Techniques for molecular beam epitaxy of multiple-wavelength vertical-cavity laser arrays

Journal of crystal growth, 1996-11, Vol.169 (1), p.175-180

Sadra, K.

1996

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Quantization effects in inversion layers of PMOSFETs on Si (100) substrates

IEEE electron device letters, 1996-06, Vol.17 (6), p.276-278

1996

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Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions : band offsets, asymmetrical transition widths, and multiple-valley band structures

Physical review letters, 1993-09, Vol.71 (12), p.1883-1886

1993

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Scanning tunneling microscopy of GaAs multiple pn junctions

Applied physics letters, 1992-08, Vol.61 (9), p.1104-1106

1992

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Relationship between photoluminescence spectra and low-field electrical properties of modulation-doped AlGaAs/GaAs quantum wells

Journal of applied physics, 1990-10, Vol.68 (8), p.4119-4126

1990

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Drift and diffusion in low-dimensional p - n junctions

Journal of applied physics, 1994-03, Vol.75 (5), p.2516-2521

1994

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Selective Etching of Al x Ga1 − x As and In ( Al x Ga1 − x ) As Alloys in Succinic Acid‐ Hydrogen Peroxide Solutions

Journal of the Electrochemical Society, 1993-05, Vol.140 (5), p.L82-L83

1993

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Normally-on GaAs/AlAs multiple-quantum-well Fabry–Perot reflection modulators for large two-dimensional arrays

Applied physics letters, 1994, Vol.65 (10), p.1242-1244

1994

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Effects of multiband electron-hole scattering and hole wave-function symmetry on minority-electron transport in GaAs

Journal of applied physics, 1989-11, Vol.66 (10), p.4791-4800

1989

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The coupled hole-phonon system and minority-electron transport in p-GaAs

Solid-state electronics, 1992, Vol.35 (8), p.1139-1149, Article 1139

1992

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Speed and efficiency in multiple p-i-n photodetectors

Journal of lightwave technology, 1993-12, Vol.11 (12), p.2052-2056

1993

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Cross-sectional scanning tunneling microscopy and spectroscopy of passivated III–V heterostructures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1994-07, Vol.12 (4), p.2005-2008

1994

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Influence of growth temperatures on the photoresponse of low temperature grown GaAs:As p-i-n diodes

Journal of electronic materials, 1993-12, Vol.22 (12), p.1457-1459, Article 1457

1993

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A Monte Carlo study of electron-hole scattering and steady-state minority-electron transport in GaAs

Applied physics letters, 1988-11, Vol.53 (22), p.2205-2207

1988

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The role of the split-off band in electron-hole energy exchange dynamics in selected III-V semiconductors

Journal of applied physics, 1989-09, Vol.66 (5), p.2020-2026

1989

Volltextzugriff (PDF)

PERAN DESA MANDIRI BENIH MENDUKUNG PERCEPATAN ADOPSI TEKNOLOGI VARIETAS UNGGUL BARU PADI

Forum penelitian Agro Ekonomi, 2021-11, Vol.39 (2), p.89

2021

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Selected two-dimensional effects in gas immersion laser doping of unpatterned silicon

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-01, Vol.16 (1), p.116-120

1998

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A 65 nm CMOS technology for mobile and digital signal processing applications

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.665-668

2004

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Transistor optimization for leakage power management in a 65 nm CMOS technology for wireless and mobile applications

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.14-15

2004

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Flux masking and thickness uniformity in molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1995-11, Vol.13 (6), p.2269-2275

1995

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Random-period superlattice quantum wells

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1994-03, Vol.12 (2), p.1082-1085

1994

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Relationship between photoluminescence spectra and low-field electrical properties of modulation-doped AlGaAs/GaAs quantum wellls

Journal of applied physics, 1990, Vol.68 (8), p.4119-4126

1990

Volltextzugriff (PDF)

Normally on GaAs/AlAs multiple-quantum well Fabry–Perot transmission modulator with ON/OFF contrast ratios ≳7.4

Applied physics letters, 1995-03, Vol.66 (10), p.1222-1224

1995

Volltextzugriff (PDF)

Comparative study of cross-sectional scanning tunneling microscopy/spectroscopy on III–V hetero- and homostructures: Ultrahigh vacuum-cleaved versus sulfide passivated

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1994-07, Vol.12 (4), p.2610-2615

1994

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Lateral resolution in laser-patterned thermal processing of GaAs

Techniques for molecular beam epitaxy of multiple-wavelength vertical-cavity laser arrays

Quantization effects in inversion layers of PMOSFETs on Si (100) substrates

Direct mapping of electronic structure across Al0.3Ga0.7As/GaAs heterojunctions : band offsets, asymmetrical transition widths, and multiple-valley band structures

Scanning tunneling microscopy of GaAs multiple pn junctions

Relationship between photoluminescence spectra and low-field electrical properties of modulation-doped AlGaAs/GaAs quantum wells

Drift and diffusion in low-dimensional p - n junctions

Selective Etching of Al x Ga1 − x As and In ( Al x Ga1 − x ) As Alloys in Succinic Acid‐ Hydrogen Peroxide Solutions

Normally-on GaAs/AlAs multiple-quantum-well Fabry–Perot reflection modulators for large two-dimensional arrays

Effects of multiband electron-hole scattering and hole wave-function symmetry on minority-electron transport in GaAs

The coupled hole-phonon system and minority-electron transport in p-GaAs

Speed and efficiency in multiple p-i-n photodetectors

Cross-sectional scanning tunneling microscopy and spectroscopy of passivated III–V heterostructures

Influence of growth temperatures on the photoresponse of low temperature grown GaAs:As p-i-n diodes

A Monte Carlo study of electron-hole scattering and steady-state minority-electron transport in GaAs

The role of the split-off band in electron-hole energy exchange dynamics in selected III-V semiconductors

PERAN DESA MANDIRI BENIH MENDUKUNG PERCEPATAN ADOPSI TEKNOLOGI VARIETAS UNGGUL BARU PADI

Selected two-dimensional effects in gas immersion laser doping of unpatterned silicon

A 65 nm CMOS technology for mobile and digital signal processing applications

Transistor optimization for leakage power management in a 65 nm CMOS technology for wireless and mobile applications

Flux masking and thickness uniformity in molecular beam epitaxy

Random-period superlattice quantum wells

Relationship between photoluminescence spectra and low-field electrical properties of modulation-doped AlGaAs/GaAs quantum wellls

Normally on GaAs/AlAs multiple-quantum well Fabry–Perot transmission modulator with ON/OFF contrast ratios ≳7.4

Comparative study of cross-sectional scanning tunneling microscopy/spectroscopy on III–V hetero- and homostructures: Ultrahigh vacuum-cleaved versus sulfide passivated

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