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Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

Journal of applied physics, 2013-12, Vol.114 (22)

2013

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M-shaped quantum wells for active region of interband cascade laser

Optical materials, 2019-02, Vol.88, p.252-255

2019

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Strong coupling in a single quantum dot-semiconductor microcavity system

Nature, 2004-11, Vol.432 (7014), p.197-200

2004

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Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions

Applied physics letters, 2005-03, Vol.86 (11), p.111105-111105-3

2005

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Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot–quantum well structures emitting at telecom spectral range

Applied physics letters, 2018-01, Vol.112 (5)

2018

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Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

Applied physics letters, 2018-05, Vol.112 (22)

2018

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Single photon emission at 1.55 μ m from charged and neutral exciton confined in a single quantum dash

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

Journal of applied physics, 2013-09, Vol.114 (9)

2013

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Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot

Optics express, 2017-12, Vol.25 (25), p.31122-31129

2017

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Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µ m

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Applied physics letters, 2016-04, Vol.108 (16)

2016

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Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

AIP advances, 2018-08, Vol.8 (8), p.085205-085205-9

2018

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InP-based single-photon sources operating at telecom C-band with increased extraction efficiency

Applied physics letters, 2021-05, Vol.118 (22)

2021

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Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

Applied physics letters, 2017-05, Vol.110 (22)

2017

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Polarization-independent gain in mid-infrared interband cascade lasers

AIP advances, 2016-11, Vol.6 (11), p.115020-115020-6

2016

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Diamagnetic coefficients and g-factors of InAs/InGaAlAs quantum dashes emitting at telecom wavelengths

Journal of applied physics, 2022-10, Vol.132 (14)

2022

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Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

Applied physics letters, 2016-03, Vol.108 (10)

2016

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Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μ m

Applied physics letters, 2013-12, Vol.103 (25)

2013

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Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55 μ m

Applied physics letters, 2008-10, Vol.93 (17), p.171910-171910-3

2008

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Monolithic high contrast grating on GaSb/AlAsSb based epitaxial structures for mid-infrared wavelength applications

Optics express, 2023-05, Vol.31 (10), p.16025-16034

2023

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Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structures

Thin solid films, 2004-02, Vol.450 (1), p.14-22

2004

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Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

Journal of applied physics, 2016-08, Vol.120 (7)

2016

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Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures

Journal of applied physics, 2016-07, Vol.120 (4)

2016

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Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

M-shaped quantum wells for active region of interband cascade laser

Strong coupling in a single quantum dot-semiconductor microcavity system

Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions

Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot–quantum well structures emitting at telecom spectral range

Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

Single photon emission at 1.55 μ m from charged and neutral exciton confined in a single quantum dash

Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µ m

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

InP-based single-photon sources operating at telecom C-band with increased extraction efficiency

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

Polarization-independent gain in mid-infrared interband cascade lasers

Diamagnetic coefficients and g-factors of InAs/InGaAlAs quantum dashes emitting at telecom wavelengths

Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μ m

Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55 μ m

Monolithic high contrast grating on GaSb/AlAsSb based epitaxial structures for mid-infrared wavelength applications

Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structures

Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures

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