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Revisiting MOSFET threshold voltage extraction methods

Microelectronics and reliability, 2013-01, Vol.53 (1), p.90-104

2013

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LprG and PE_PGRS33 Mycobacterium tuberculosis virulence factors induce differential mitochondrial dynamics in macrophages

Scandinavian journal of immunology, 2019-01, Vol.89 (1), p.e12728-n/a

2019

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A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

IEEE transactions on electron devices, 2007-01, Vol.54 (1), p.131-140

2007

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IEEE_Xplore

Metabolic Recovery with the Persistence of Proinflammatory Leucocyte Dysfunction After Bariatric Intervention for Obesity

Obesity surgery, 2024-05, Vol.34 (5), p.1575-1583

2024

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Dengue Virus Serotype-2 Interferes with the Formation of Neutrophil Extracellular Traps

Intervirology, 2015-01, Vol.58 (4), p.250-259

2015

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Conductance-to-Current-Ratio-Based Parameter Extraction in MOS Leakage Current Models

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3844-3850

2016

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IEEE_Xplore

Systematic Characterization of Tunnel FETs Using a Universal Compact Model

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3554-3559

2015

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IEEE_Xplore

Threshold voltage extraction in Tunnel FETs

Solid-state electronics, 2014-03, Vol.93, p.49-55

2014

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A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs

IEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2390-2395

2012

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IEEE_Xplore

An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film Transistors

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.46-50

2012

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IEEE_Xplore

A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

Microelectronics and reliability, 2015-02, Vol.55 (2), p.293-307

2015

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Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

Solid-state electronics, 2011-03, Vol.57 (1), p.43-51

2011

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A formula for the central potential’s maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs

Solid-state electronics, 2012-10, Vol.76, p.112-115

2012

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Approximate analytical expression for the tersminal voltage in multi-exponential diode models

Solid-state electronics, 2013-11, Vol.89, p.7-11

2013

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An explicit multi-exponential model for semiconductor junctions with series and shunt resistances

Microelectronics and reliability, 2011-12, Vol.51 (12), p.2044-2048

2011

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A rigorous Fermi-Dirac statistics-based MOSFET channel surface potential equation using polylogarithms

Solid-state electronics, 2023-01, Vol.199, p.108507, Article 108507

2023

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A new approach to the extraction of single exponential diode model parameters

Solid-state electronics, 2018-06, Vol.144, p.33-38

2018

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Simplified EKV model parameter extraction in polysilicon MOSFETs

Solid-state electronics, 2022-09, Vol.195, p.108403, Article 108403

2022

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Algorithm to extract model parameters of partially shaded photovoltaic modules

Facta universitatis. Series Electronics and energetics, 2023, Vol.36 (4), p.567-576

2023

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A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier

Solid-state electronics, 2022-02, Vol.188, p.108218, Article 108218

2022

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A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

Microelectronics and reliability, 2017-02, Vol.69, p.1-16

2017

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An Explicit Multiexponential Model as an Alternative to Traditional Solar Cell Models With Series and Shunt Resistances

IEEE journal of photovoltaics, 2012-07, Vol.2 (3), p.261-268

2012

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IEEE_Xplore

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

Microelectronics and reliability, 2010-02, Vol.50 (2), p.312-315

2010

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Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1669-1672

2005

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IEEE_Xplore

Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction

Microelectronics and reliability, 2009-07, Vol.49 (7), p.689-692

2009

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Revisiting MOSFET threshold voltage extraction methods

LprG and PE_PGRS33 Mycobacterium tuberculosis virulence factors induce differential mitochondrial dynamics in macrophages

A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

Metabolic Recovery with the Persistence of Proinflammatory Leucocyte Dysfunction After Bariatric Intervention for Obesity

Dengue Virus Serotype-2 Interferes with the Formation of Neutrophil Extracellular Traps

Conductance-to-Current-Ratio-Based Parameter Extraction in MOS Leakage Current Models

Systematic Characterization of Tunnel FETs Using a Universal Compact Model

Threshold voltage extraction in Tunnel FETs

A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs

An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film Transistors

A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

A formula for the central potential’s maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs

Approximate analytical expression for the tersminal voltage in multi-exponential diode models

An explicit multi-exponential model for semiconductor junctions with series and shunt resistances

A rigorous Fermi-Dirac statistics-based MOSFET channel surface potential equation using polylogarithms

A new approach to the extraction of single exponential diode model parameters

Simplified EKV model parameter extraction in polysilicon MOSFETs

Algorithm to extract model parameters of partially shaded photovoltaic modules

A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier

A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

An Explicit Multiexponential Model as an Alternative to Traditional Solar Cell Models With Series and Shunt Resistances

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs

Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction

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