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A method for using Josephson voltage standards for direct characterization of high performance digitizers to establish AC voltage and current traceability to SI

Measurement science & technology, 2023-01, Vol.34 (1), p.15003

2023

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Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

TheScientificWorld, 2013-01, Vol.2013 (2013), p.1-6

2013

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Passivation studies of GaSb-based superlattice structures

Thin solid films, 2014-09, Vol.567, p.77-81

2014

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On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E1 and E1 + Δ1 optical transitions

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

Thin solid films, 2012-11, Vol.522, p.223-227

2012

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Application of spectroscopic ellipsometry for investigations of compaction and decompaction state in Si-SiO2 systems

Journal of physics. Conference series, 2009-08, Vol.181 (1), p.012035

2009

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Electronic properties of BaTiO3/4H-SiC interface

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-03, Vol.176 (4), p.301-304

2011

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RBS-C and ellipsometric investigations of radiation damage in hot-implanted GaAs layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-03, Vol.176 (4), p.340-343

2011

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Application of ellipsometric and interference methods in MOS structures investigations

Journal of physics. Conference series, 2007-04, Vol.61 (1), p.997-1001

2007

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Photoelectrical measurements of the local value of the contact potential difference in the metal–insulator semiconductor (MIS) structures

Thin solid films, 2004-02, Vol.450 (1), p.203-206

2004

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Oxidation Process of SiC by RTP Technique

Materials science forum, 2009-01, Vol.615-617, p.529-532

2009

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Structural characterisation of self-implanted Si after HT-HP treatment

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.170-173

2005

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Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

Physica status solidi. C, 2007-04, Vol.4 (4), p.1448-1453

2007

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On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E-1 and E-1 + Delta(1) optical transitions

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Deep-ultraviolet Raman investigation of silicon oxide: thin film on silicon substrate versus bulk material

Advances in natural sciences. Nanoscience and nanotechnology, 2012-12, Vol.3 (4), p.045003-1-7

2012

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Effect of N 2 + Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs

Acta physica Polonica, A, 2015-11, Vol.128 (5), p.918-923

2015

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On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E 1 and E 1 + Δ1 optical transitions

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Determination of the Analytical Relationship between Refractive Index and Density of SiO 2 Layers

Acta physica Polonica, A, 2009-12, Vol.116 (Supplement), p.S-92-S-94

2009

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On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E{sub 1} and E{sub 1} + Δ{sub 1} optical transitions

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Electronic properties of BaTiO 3/4H-SiC interface

Materials science & engineering. B, Solid-state materials for advanced technology, 2011, Vol.176 (4), p.301-304

2011

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Adsorption of azacrown ethers at solid–liquid interface. Contact angle and neutron reflectivity study

Applied surface science, 2009-10, Vol.256 (1), p.274-279

2009

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Application of spectroscopic ellipsometry for investigations of compaction and decompaction state in Si-SiO 2 systems

Journal of physics. Conference series, 2009-08, Vol.181, p.12035

2009

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Dielectric Function of Native Oxide on Ion-Implanted GaAs

Acta physica Polonica, A, 2013-05, Vol.123 (5), p.956-959

2013

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Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

Materials science in semiconductor processing, 2004, Vol.7 (4), p.399-403

2004

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Analysis of the Experimental Data from MOS Structures in the Case of Large Noise-to-Signal Ratio

Acta physica Polonica, A, 2009-12, Vol.116 (Supplement), p.S-26-S-29

2009

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A method for using Josephson voltage standards for direct characterization of high performance digitizers to establish AC voltage and current traceability to SI

Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

Passivation studies of GaSb-based superlattice structures

On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E1 and E1 + Δ1 optical transitions

Study of interfaces chemistry in type-II GaSb/InAs superlattice structures

Application of spectroscopic ellipsometry for investigations of compaction and decompaction state in Si-SiO2 systems

Electronic properties of BaTiO3/4H-SiC interface

RBS-C and ellipsometric investigations of radiation damage in hot-implanted GaAs layers

Application of ellipsometric and interference methods in MOS structures investigations

Photoelectrical measurements of the local value of the contact potential difference in the metal–insulator semiconductor (MIS) structures

Oxidation Process of SiC by RTP Technique

Structural characterisation of self-implanted Si after HT-HP treatment

Sulphur passivation of GaSb, InGaAsSb and AlGaAsSb surfaces

On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E-1 and E-1 + Delta(1) optical transitions

Deep-ultraviolet Raman investigation of silicon oxide: thin film on silicon substrate versus bulk material

Effect of N 2 + Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs

On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E 1 and E 1 + Δ1 optical transitions

Determination of the Analytical Relationship between Refractive Index and Density of SiO 2 Layers

On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E{sub 1} and E{sub 1} + Δ{sub 1} optical transitions

Electronic properties of BaTiO 3/4H-SiC interface

Adsorption of azacrown ethers at solid–liquid interface. Contact angle and neutron reflectivity study

Application of spectroscopic ellipsometry for investigations of compaction and decompaction state in Si-SiO 2 systems

Dielectric Function of Native Oxide on Ion-Implanted GaAs

Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

Analysis of the Experimental Data from MOS Structures in the Case of Large Noise-to-Signal Ratio

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