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Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

Thin solid films, 2008-11, Vol.517 (2), p.848-852

2008

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Optical Transmittance Improvements of Al2O3/TiO2 Multilayer OLED Encapsulation Films Processed by Atomic Layer Deposition

Journal of electronic materials, 2021-04, Vol.50 (4), p.2015-2020

2021

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Sb-Se-based phase-change memory device with lower power and higher speed operations

IEEE electron device letters, 2006-06, Vol.27 (6), p.445-447

2006

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Annealing Temperature Dependence of ZTO Thin Film Properties and Its Application on Thin Film Transistors by Inkjet Printing

Journal of electronic materials, 2020-03, Vol.49 (3), p.2003-2007

2020

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The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Thin solid films, 2008-10, Vol.516 (23), p.8810-8812

2008

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Dipole formation and electrical properties of high-k/SiO2 interface according to the density of SiO2 interfacial layer

Current Applied Physics, 2022, 37(0), , pp.45-51

2022

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Polycrystalline silicon-germanium heating layer for phase-change memory applications

Applied physics letters, 2006-07, Vol.89 (5)

2006

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Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(3), 75, pp.354-362

2017

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Optical and electrical properties of transparent conducting gallium-doped ZnO electrodes prepared by atomic layer deposition for application in organic solar cells

Thin solid films, 2013-11, Vol.546, p.271-274

2013

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Effect of the microstructural characteristics of a Ga-doped TiO2 hole block layer on an inverted structure organic solar cell

Journal of the Korean Physical Society, 2016, 69(5), , pp.806-810

2016

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Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.721-724

2006

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Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-09, Vol.24 (5), p.2312-2316

2006

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0.34 \text} AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

IEEE electron device letters, 2015-11, Vol.36 (11), p.1132-1134

2015

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Effects of Deposition Power and Oxygen Partial Pressure on Low-Temperature-Processed In-Ga-Zn-O Thin-Film Transistors

Journal of nanoelectronics and optoelectronics, 2011-08, Vol.6 (3), p.283-287

Ryu, Sang Ouk

2011

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Characterization of Ge22Sb22Te56 and Sb-Excess Ge15Sb47Te38 Chalcogenide Thin Films for Phase-Change Memory Applications

Journal of electronic materials, 2008-04, Vol.37 (4), p.535-539

Ryu, Sang-Ouk

2008

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Deposition and Characterization of CIGS Thin Films Deposited by Chemical Spray Process

Molecular Crystals and Liquid Crystals, 2015-08, Vol.617 (1), p.186-194

2015

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Improving light efficiency of white polymer light emitting diodes by introducing the TPBi exciton protection layer

Thin solid films, 2009-05, Vol.517 (14), p.4143-4146

2009

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Effects of oxygen concentration on the electrical properties of ZnO films

Ceramics international, 2008-05, Vol.34 (4), p.1097-1101

2008

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SrTa2O6 THIN FILMS DEPOSITED BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 12, pp. 6941-6944. 2001, 2001, Vol.40 (12), p.6941-6944

2001

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New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2002-06, Vol.41 (Part 2, No. 6B), p.L729-L731

2002

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Influence of Deposition Parameters on Performance of Zn(O,S) Buffer Layer Deposited by Solution-Based Continuous Flow Reactor for CIGS Solar Cells

Journal of nanoelectronics and optoelectronics, 2024-03, Vol.19 (3), p.247-255

2024

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Effect of SiO2 passivation layer on nanoporous Si photocathode under the density of SiO2 passivation layer

Applied surface science, 2024-10, Vol.670, p.160594, Article 160594

2024

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Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Applied surface science, 2007-10, Vol.254 (1), p.312-315

2007

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Optimization of Si photocathode formation conditions through correlation between saw damage removal and black Si

Solar energy, 2023-09, Vol.262, p.111787, Article 111787

2023

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Stress reduction during phase change in Ge2Sb2Te5 by capping Tin film

Journal of materials science. Materials in electronics, 2007-10, Vol.18 (10), p.1079-1082

2007

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Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

Optical Transmittance Improvements of Al2O3/TiO2 Multilayer OLED Encapsulation Films Processed by Atomic Layer Deposition

Sb-Se-based phase-change memory device with lower power and higher speed operations

Annealing Temperature Dependence of ZTO Thin Film Properties and Its Application on Thin Film Transistors by Inkjet Printing

The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Dipole formation and electrical properties of high-k/SiO2 interface according to the density of SiO2 interfacial layer

Polycrystalline silicon-germanium heating layer for phase-change memory applications

Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure

Optical and electrical properties of transparent conducting gallium-doped ZnO electrodes prepared by atomic layer deposition for application in organic solar cells

Effect of the microstructural characteristics of a Ga-doped TiO2 hole block layer on an inverted structure organic solar cell

Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory

Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applications

0.34 \text} AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

Effects of Deposition Power and Oxygen Partial Pressure on Low-Temperature-Processed In-Ga-Zn-O Thin-Film Transistors

Characterization of Ge22Sb22Te56 and Sb-Excess Ge15Sb47Te38 Chalcogenide Thin Films for Phase-Change Memory Applications

Deposition and Characterization of CIGS Thin Films Deposited by Chemical Spray Process

Improving light efficiency of white polymer light emitting diodes by introducing the TPBi exciton protection layer

Effects of oxygen concentration on the electrical properties of ZnO films

SrTa2O6 THIN FILMS DEPOSITED BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION

New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition

Influence of Deposition Parameters on Performance of Zn(O,S) Buffer Layer Deposited by Solution-Based Continuous Flow Reactor for CIGS Solar Cells

Effect of SiO2 passivation layer on nanoporous Si photocathode under the density of SiO2 passivation layer

Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Optimization of Si photocathode formation conditions through correlation between saw damage removal and black Si

Stress reduction during phase change in Ge2Sb2Te5 by capping Tin film

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