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Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2404-2411

2014

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Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

IEEE electron device letters, 2014-03, Vol.35 (3), p.360-362

2014

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Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

IEEE electron device letters, 2014-03, Vol.35 (3), p.357-359

2014

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Nonvolatile Memory Thin-Film Transistors Using Biodegradable Chicken Albumen Gate Insulator and Oxide Semiconductor Channel on Eco-Friendly Paper Substrate

ACS applied materials & interfaces, 2015-03, Vol.7 (8), p.4869-4874

2015

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Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (18), p.4779-4786

2015

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Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

Solid-state electronics, 2015-09, Vol.111, p.153-160

2015

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Bipolar resistive switching in amorphous titanium oxide thin film

Physica status solidi. PSS-RRL. Rapid research letters, 2010-02, Vol.4 (1-2), p.28-30

2010

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Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor

Applied physics letters, 2010-11, Vol.97 (18), p.183502-183502-3

2010

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Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

Applied physics letters, 2011-03, Vol.98 (10)

2011

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Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor

Thin solid films, 2011-08, Vol.519 (20), p.6868-6871

2011

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Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Semiconductor science and technology, 2011-03, Vol.26 (3), p.034007

2011

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Instability of an Amorphous Indium Gallium Zinc Oxide TFT under Bias and Light Illumination

Journal of the Korean Physical Society, 2011, 58(1), , pp.158-162

2011

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Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2135-2142

2011

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Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

Applied physics letters, 2010-05, Vol.96 (21)

2010

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Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3), p.03CB06-03CB06-4

2011

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Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

Applied physics letters, 2009-10, Vol.95 (17), p.173508-173508-3

2009

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Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In--Ga--Zn--O Thin-Film Transistors

Jpn J Appl Phys, 2013-10, Vol.52 (10), p.100209-100209-3

2013

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Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

Applied physics letters, 2011-01, Vol.98 (3), p.033504-033504-3

2011

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Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3653-3657

2015

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Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature

Applied physics letters, 2008-10, Vol.93 (14), p.142111-142111-3

2008

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Rapid Vapor-Phase Fabrication of Organic−Inorganic Hybrid Superlattices with Monolayer Precision

Journal of the American Chemical Society, 2007-12, Vol.129 (51), p.16034-16041

2007

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Light and bias stability of a-IGZO TFT fabricated by r.f. magnetron sputtering

Current applied physics, 2011-09, Vol.11 (5), p.S49-S53

2011

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Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

IEEE electron device letters, 2009-01, Vol.30 (1), p.48-50

2009

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Device reliability under electrical stress and photo response of oxide TFTs

Journal of the Society for Information Display, 2010-10, Vol.18 (10), p.779-788

2010

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Low-Temperature Processed Flexible In-Ga-Zn-O Thin-Film Transistors Exhibiting High Electrical Performance

IEEE electron device letters, 2011-12, Vol.32 (12), p.1692-1694

2011

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Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer

Nonvolatile Memory Thin-Film Transistors Using Biodegradable Chicken Albumen Gate Insulator and Oxide Semiconductor Channel on Eco-Friendly Paper Substrate

Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates

Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

Bipolar resistive switching in amorphous titanium oxide thin film

Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor

Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Instability of an Amorphous Indium Gallium Zinc Oxide TFT under Bias and Light Illumination

Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications

Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In--Ga--Zn--O Thin-Film Transistors

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature

Rapid Vapor-Phase Fabrication of Organic−Inorganic Hybrid Superlattices with Monolayer Precision

Light and bias stability of a-IGZO TFT fabricated by r.f. magnetron sputtering

Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

Device reliability under electrical stress and photo response of oxide TFTs

Low-Temperature Processed Flexible In-Ga-Zn-O Thin-Film Transistors Exhibiting High Electrical Performance

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