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Effect of energy transfer on the optical properties of surface-passivated perovskite films with CdSe/ZnS quantum dots

Scientific reports, 2019-12, Vol.9 (1), p.18433-6, Article 18433

2019

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Effect of defect states on CH3NH3PbI3 solar cell efficiency by varying application time of antisolvents

Applied physics. A, Materials science & processing, 2023-09, Vol.129 (9), Article 615

2023

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Evolution of optical phonons in epitaxial Ge1−ySny structures

Journal of Raman spectroscopy, 2020-11, Vol.51 (11), p.2305-2310

2020

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Effects of stirring temperature of P3HT:PCBM solution on device performance of organic photovoltaics

Journal of the Korean Physical Society, 2023, Vol.82 (2), p.199-203

2023

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Formation Mechanism of GaN Nanowires with Various Shapes on Si(111)

Journal of the Korean Physical Society, 2020, 77(3), , pp.247-252

2020

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Luminescence properties of InGaN/GaN light-emitting diodes with violet, blue, and green emission

Journal of the Korean Physical Society, 2021, 78(4), , pp.275-279

2021

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Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Journal of applied physics, 2016-08, Vol.120 (8)

2016

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Enhancement in Power Conversion Efficiency of Perovskite Solar Cells by Reduced Non-Radiative Recombination Using a Brij C10-Mixed PEDOT:PSS Hole Transport Layer

Polymers, 2023-02, Vol.15 (3), p.772

2023

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Antisolvent treatment of reproducible MAPbI3 perovskite solar cells in ambient atmosphere

Journal of the Korean Physical Society, 2021, 79(8), , pp.741-745

2021

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Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

Applied physics letters, 2017-08, Vol.111 (7)

2017

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Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Electronic structure of P3HT film oxidized by ultraviolet–ozone treatment

Journal of the Korean Physical Society, 2021, 79(1), , pp.70-75

2021

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Effect of antisolvent application time on CH3NH3PbI3 solar cells in ambient atmosphere

Current applied physics, 2023-12, Vol.56, p.119-125

2023

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Enhancement of luminescence properties and stability in perovskite hybrid structure with CdSe/ZnS quantum dots

APL materials, 2019-05, Vol.7 (5), p.051112-051112-6

2019

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Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires

Nanomaterials (Basel, Switzerland), 2023-01, Vol.13 (2), p.358

2023

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Ultrastrong Coupling Enhancement with Squeezed Mode Volume in Terahertz Nanoslots

Nano letters, 2023-08, Vol.23 (15), p.7086-7091

2023

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Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures

Journal of the Korean Physical Society, 2017, 70(8), , pp.785-790

2017

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Degenerate parallel conducting layer and conductivity type conversion observed from p -Ge1−ySny (y = 0.06%) grown on n -Si substrate

Applied physics letters, 2012-09, Vol.101 (13)

2012

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Defect suppression and photoresponsivity enhancement in methylammonium lead halide perovskites by CdSe/ZnS quantum dots

Journal of colloid and interface science, 2021-05, Vol.590, p.19-27

2021

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Effect of CdSe/ZnS quantum dots on temperature-dependent luminescence properties in mixed halide perovskites

Journal of luminescence, 2020-03, Vol.219, p.116940, Article 116940

2020

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Temperature-dependent carrier dynamics of InP/InGaP quantum structures grown at various growth temperatures using migration-enhanced epitaxy

Journal of luminescence, 2020-07, Vol.223, p.117214, Article 117214

2020

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Electronic Structure of Nonionic Surfactant-Modified PEDOT:PSS and Its Application in Perovskite Solar Cells with Reduced Interface Recombination

ACS applied materials & interfaces, 2019-05, Vol.11 (18), p.17028-17034

2019

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Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Emission characteristics of shape-engineered InAs/InAlGaAs quantum dots subjected to thermal treatments

Journal of the Korean Physical Society, 2016, 69(1), , pp.85-90

2016

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Improvement of device performances, including electrostatic discharge characteristics, of InGaN/GaN light-emitting diodes by using a Si-doped graded superlattice

Journal of the Korean Physical Society, 2017, 70(11), , pp.1001-1006

2017

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Effect of energy transfer on the optical properties of surface-passivated perovskite films with CdSe/ZnS quantum dots

Effect of defect states on CH3NH3PbI3 solar cell efficiency by varying application time of antisolvents

Evolution of optical phonons in epitaxial Ge1−ySny structures

Effects of stirring temperature of P3HT:PCBM solution on device performance of organic photovoltaics

Formation Mechanism of GaN Nanowires with Various Shapes on Si(111)

Luminescence properties of InGaN/GaN light-emitting diodes with violet, blue, and green emission

Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Enhancement in Power Conversion Efficiency of Perovskite Solar Cells by Reduced Non-Radiative Recombination Using a Brij C10-Mixed PEDOT:PSS Hole Transport Layer

Antisolvent treatment of reproducible MAPbI3 perovskite solar cells in ambient atmosphere

Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)

Electronic structure of P3HT film oxidized by ultraviolet–ozone treatment

Effect of antisolvent application time on CH3NH3PbI3 solar cells in ambient atmosphere

Enhancement of luminescence properties and stability in perovskite hybrid structure with CdSe/ZnS quantum dots

Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires

Ultrastrong Coupling Enhancement with Squeezed Mode Volume in Terahertz Nanoslots

Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures

Degenerate parallel conducting layer and conductivity type conversion observed from p -Ge1−ySny (y = 0.06%) grown on n -Si substrate

Defect suppression and photoresponsivity enhancement in methylammonium lead halide perovskites by CdSe/ZnS quantum dots

Effect of CdSe/ZnS quantum dots on temperature-dependent luminescence properties in mixed halide perovskites

Temperature-dependent carrier dynamics of InP/InGaP quantum structures grown at various growth temperatures using migration-enhanced epitaxy

Electronic Structure of Nonionic Surfactant-Modified PEDOT:PSS and Its Application in Perovskite Solar Cells with Reduced Interface Recombination

Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Emission characteristics of shape-engineered InAs/InAlGaAs quantum dots subjected to thermal treatments

Improvement of device performances, including electrostatic discharge characteristics, of InGaN/GaN light-emitting diodes by using a Si-doped graded superlattice

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