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Abnormal growth of LPCVD SiO2 on CoSi2 by high dose As implantation

Thin solid films, 2003-06, Vol.434 (1-2), p.69-74

2003

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Growth Temperature Effect of MBE-Seed Layers on Structural and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Method

Journal of the Korean Physical Society, 2010-05, Vol.56 (5), p.1514-1518

2010

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High-performance and low-cost 0.15- mu m nMOSFETs using simultaneous N-gate and source/drain doping process

IEEE transactions on electron devices, 2004-01, Vol.51 (1)

2004

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Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET

Journal of the Korean Physical Society, 2007, 50(6), , pp.1883-1886

2007

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Abnormal silicon oxide growth on cobalt silicide in arsenic-doped N+ active areas

Materials letters, 2003-07, Vol.57 (22), p.3565-3569

2003

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Void formation during silicidation and its influence on the thermal stability of cobalt silicide

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-07, Vol.20 (4), p.1171-1176

2002

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Shallow Trench Isolation Top Corner Rounding Using Si Soft Etching Following Diluted Hydrofluorine Solution

Japanese Journal of Applied Physics, 2004-11, Vol.43 (11A), p.7701-7704

2004

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Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET

Journal of the Korean Physical Society, 2007-06, p.1883-1886

2007

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Effects of Growth Temperature of MBE-seed Layers on the Structural and Optical Properties of ZnO Thin Films Prepared by Using the Sol-gel Method

Journal of the Korean Physical Society, 2010, 56(5), , pp.1514-1518

2010

Volltextzugriff (PDF)

Abnormal growth of LPCVD SiO 2 on CoSi 2 by high dose As implantation

Thin solid films, 2003, Vol.434 (1), p.69-74

2003

Volltextzugriff (PDF)

High-performance and low-cost 0.15-[mu]m nMOSFETs using simultaneous N-gate and source/drain doping process

IEEE transactions on electron devices, 2004-01, Vol.51 (1), p.92

2004

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High-performance and low-cost 0.15-/spl mu/m nMOSFETs using simultaneous N-gate and source/drain doping process

IEEE transactions on electron devices, 2004-01, Vol.51 (1), p.92-97

2004

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High-performance and low-cost 0.15-mum nMOSFETs using simultaneous N-gate and source/drain doping process

IEEE transactions on electron devices, 2004-01, Vol.51 (1), p.92-97

2004

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Comparison of cytological and histological preparations in the diagnosis of pancreatic malignancies using endoscopic ultrasoundguided fine needle aspiration

国际肝胆胰疾病杂志：英文版, 2017, Vol.16 (4), p.418-423

2017

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Abnormal growth of LPCVD SiO2 on CoSi2 by high dose As implantation

Growth Temperature Effect of MBE-Seed Layers on Structural and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Method

High-performance and low-cost 0.15- mu m nMOSFETs using simultaneous N-gate and source/drain doping process

Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET

Abnormal silicon oxide growth on cobalt silicide in arsenic-doped N+ active areas

Void formation during silicidation and its influence on the thermal stability of cobalt silicide

Shallow Trench Isolation Top Corner Rounding Using Si Soft Etching Following Diluted Hydrofluorine Solution

Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET

Effects of Growth Temperature of MBE-seed Layers on the Structural and Optical Properties of ZnO Thin Films Prepared by Using the Sol-gel Method

Abnormal growth of LPCVD SiO 2 on CoSi 2 by high dose As implantation

High-performance and low-cost 0.15-[mu]m nMOSFETs using simultaneous N-gate and source/drain doping process

High-performance and low-cost 0.15-/spl mu/m nMOSFETs using simultaneous N-gate and source/drain doping process

High-performance and low-cost 0.15-mum nMOSFETs using simultaneous N-gate and source/drain doping process

Comparison of cytological and histological preparations in the diagnosis of pancreatic malignancies using endoscopic ultrasoundguided fine needle aspiration

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