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New Insight into Ni‐Rich Layered Structure for Next‐Generation Li Rechargeable Batteries

Advanced energy materials, 2018-02, Vol.8 (4), p.n/a

2018

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High Durable, Biocompatible, and Flexible Piezoelectric Pulse Sensor Using Single‐Crystalline III‐N Thin Film

Advanced functional materials, 2019-09, Vol.29 (37), p.n/a

2019

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Highly‐Sensitive Skin‐Attachable Eye‐Movement Sensor Using Flexible Nonhazardous Piezoelectric Thin Film

Advanced functional materials, 2021-02, Vol.31 (8), p.n/a

2021

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Piezoelectric Sensors Operating at Very High Temperatures and in Extreme Environments Made of Flexible Ultrawide‐Bandgap Single‐Crystalline AlN Thin Films

Advanced functional materials, 2023-03, Vol.33 (10), p.n/a

2023

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Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator

Nano energy, 2019-03, Vol.57, p.670-679

2019

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Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

Advanced materials (Weinheim), 2010-11, Vol.22 (42), p.4749-4753

2010

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Inverted n–p junction 940‐nm vertical‐cavity surface‐emitting laser arrays consisting of 875 devices on p‐GaAs substrate

Electronics letters, 2024-05, Vol.60 (9), p.n/a

2024

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Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

Journal of the American Ceramic Society, 2019-06, Vol.102 (6), p.3745-3752

2019

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High‐efficiency flexible III‐V photovoltaic solar cells based on single‐crystal‐like thin films directly grown on metallic tapes

Progress in photovoltaics, 2019-01, Vol.27 (1), p.30-36

2019

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Skin‐Attached Arrayed Piezoelectric Sensors for Continuous and Safe Monitoring of Oculomotor Movements

Advanced healthcare materials, 2024-06, Vol.13 (15), p.e2303581-n/a

2024

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High‐efficiency single‐junction p‐i‐n GaAs solar cell on roll‐to‐roll epi‐ready flexible metal foils for low‐cost photovoltaics

Progress in photovoltaics, 2020-11, Vol.28 (11), p.1107-1119

2020

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Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

Applied physics letters, 2015-12, Vol.107 (24)

2015

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Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1080-1091

2009

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III-Nitride Deep UV LED Without Electron Blocking Layer

IEEE photonics journal, 2019-04, Vol.11 (2), p.1-11

2019

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Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes

Optics express, 2015-08, Vol.23 (16), p.20340-20349

2015

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AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 10

IEEE photonics technology letters, 2015-03, Vol.27 (6), p.642-645

2015

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Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

ACS photonics, 2018-08, Vol.5 (8), p.3305-3314

2018

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Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD

IEEE photonics technology letters, 2007-11, Vol.19 (21), p.1744-1746

2007

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Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Applied physics letters, 2012-10, Vol.101 (16)

2012

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Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Applied physics letters, 2013-03, Vol.102 (10)

2013

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Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Applied physics letters, 2010-03, Vol.96 (10), p.101102-101102-3

2010

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Thermodynamic Analysis of Group-III-Nitride Alloying with Yttrium by Hybrid Chemical Vapor Deposition

Nanomaterials (Basel, Switzerland), 2022-11, Vol.12 (22), p.4053

2022

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Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-03, Vol.9 (7), p.2243-2251

2021

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Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Applied physics letters, 2013-11, Vol.103 (21)

2013

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Defect reduction by liquid phase epitaxy of germanium on single-crystalline-like germanium templates on flexible, low-cost metal substrates

CrystEngComm, 2018, Vol.20 (41), p.6573-6579

2018

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New Insight into Ni‐Rich Layered Structure for Next‐Generation Li Rechargeable Batteries

High Durable, Biocompatible, and Flexible Piezoelectric Pulse Sensor Using Single‐Crystalline III‐N Thin Film

Highly‐Sensitive Skin‐Attachable Eye‐Movement Sensor Using Flexible Nonhazardous Piezoelectric Thin Film

Piezoelectric Sensors Operating at Very High Temperatures and in Extreme Environments Made of Flexible Ultrawide‐Bandgap Single‐Crystalline AlN Thin Films

Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator

Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

Inverted n–p junction 940‐nm vertical‐cavity surface‐emitting laser arrays consisting of 875 devices on p‐GaAs substrate

Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

High‐efficiency flexible III‐V photovoltaic solar cells based on single‐crystal‐like thin films directly grown on metallic tapes

Skin‐Attached Arrayed Piezoelectric Sensors for Continuous and Safe Monitoring of Oculomotor Movements

High‐efficiency single‐junction p‐i‐n GaAs solar cell on roll‐to‐roll epi‐ready flexible metal foils for low‐cost photovoltaics

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

III-Nitride Deep UV LED Without Electron Blocking Layer

Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes

AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 10

Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD

Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Thermodynamic Analysis of Group-III-Nitride Alloying with Yttrium by Hybrid Chemical Vapor Deposition

Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Defect reduction by liquid phase epitaxy of germanium on single-crystalline-like germanium templates on flexible, low-cost metal substrates

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