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Comparative studies of interatomic potentials for modeling point defects in wurtzite GaN

AIP advances, 2023-01, Vol.13 (1), p.015015-015015-16

2023

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Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Journal of applied physics, 2020-12, Vol.128 (22)

2020

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The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

Journal of applied physics, 2019-06, Vol.125 (21)

2019

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Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Physica status solidi. A, Applications and materials science, 2017-09, Vol.214 (9), p.1600752-n/a

2017

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Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys

Applied physics letters, 2010-04, Vol.96 (16)

2010

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A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission

Semiconductor science and technology, 2015-04, Vol.30 (4), p.44004

2015

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Indium segregation mechanism and V-defect formation at the [0001] InAlN surface: an ab-initio investigation

Journal of physics. D, Applied physics, 2021-01, Vol.54 (1), p.15305

2021

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Influences of the biaxial strain and c-screw dislocation on the clustering in InGaN alloys

Journal of applied physics, 2010-11, Vol.108 (10)

2010

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Nitride Semiconductors: Handbook on Materials and Devices

1. Aufl., 2006

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Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces

Crystals (Basel), 2023-07, Vol.13 (7), p.1027

2023

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Indium segregation mechanism and V-defects formation on (0001) InAlN surface: an ab-initio investigation

Journal of physics. D, Applied physics, 2020-10, Vol.54 (1)

2020

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Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Applied physics express, 2019-01, Vol.12 (1), p.14001

2019

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Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11), p.11NH02-11NH02-7

2013

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Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire

Physica status solidi. PSS-RRL. Rapid research letters, 2016-09, Vol.10 (9), p.682-686

2016

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Boundary crossing between higher education and the world of work: a case study in post-1994 Rwanda

Higher education research and development, 2014-09, Vol.33 (5), p.962-977

2014

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On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode

Physica. B, Condensed matter, 2024-07, Vol.684, p.415965, Article 415965

2024

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The effect of N-vacancy and In aggregation on the properties of InAlN

Computational materials science, 2020-02, Vol.172, p.109384, Article 109384

2020

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The [10-10] edge dislocation in the wurtzite structure: A high-resolution transmission electron microscopy investigation of [0001] tilt grain boundaries in GaN and ZnO

Acta materialia, 2019-08, Vol.175, p.457-465

2019

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Stress relaxation in III-V nitrides: Investigation of metallic atoms interaction with the N-vacancy

Europhysics letters, 2022-03, Vol.137 (6), p.66003

2022

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Enhancing the culture of reading in Rwanda: reflections by students in tertiary institutions

The Journal of Pan African studies, 2012-03, Vol.5 (1), p.36

Canisius Ruterana, Pierre

2012

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Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers

Applied physics letters, 2011-06, Vol.98 (25), p.252104-252104-3

2011

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Children's reflections on gender equality in fairy tales: a Rwanda case study

The Journal of Pan African studies, 2012-01, Vol.4 (9), p.85

Ruterana, Pierre Canisius

2012

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Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics

Materials science in semiconductor processing, 2024-06, Vol.176, p.108314, Article 108314

2024

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Urea-assisted morphological engineering of MFI nanosheets with tunable b-thickness

Nano research, 2023-10, Vol.16 (10), p.12196-12206

2023

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Comparative studies of interatomic potentials for modeling point defects in wurtzite GaN

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys

A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys

Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission

Indium segregation mechanism and V-defect formation at the [0001] InAlN surface: an ab-initio investigation

Influences of the biaxial strain and c-screw dislocation on the clustering in InGaN alloys

Nitride Semiconductors: Handbook on Materials and Devices

Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces

Indium segregation mechanism and V-defects formation on (0001) InAlN surface: an ab-initio investigation

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire

Boundary crossing between higher education and the world of work: a case study in post-1994 Rwanda

On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode

The effect of N-vacancy and In aggregation on the properties of InAlN

The [10-10] edge dislocation in the wurtzite structure: A high-resolution transmission electron microscopy investigation of [0001] tilt grain boundaries in GaN and ZnO

Stress relaxation in III-V nitrides: Investigation of metallic atoms interaction with the N-vacancy

Enhancing the culture of reading in Rwanda: reflections by students in tertiary institutions

Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers

Children's reflections on gender equality in fairy tales: a Rwanda case study

Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics

Urea-assisted morphological engineering of MFI nanosheets with tunable b-thickness

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